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    LH53V32500 Search Results

    LH53V32500 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH53V32500N Sharp EPROM Parallel Async Original PDF
    LH53V32500T Sharp EPROM Parallel Async Original PDF
    LH53V32500TR Sharp EPROM Parallel Async Original PDF

    LH53V32500 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1133

    Abstract: No abstract text available
    Text: CMOS 32M 4M x 8/2M × 16 3 V-Drive MROM LH53V32500 FEATURES • 4,194,304 words × 8 bit organization (Byte mode) 2,097,152 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 126 mW (MAX.) Standby: 108 µW (MAX.)


    Original     		PDF LH53V32500 44-pin, 600-mil 48-pin, LH53V32500 32M-bit 44-PIN 48TSOP D1133

    44-PIN

    Abstract: 48-PIN
    Text: LH53V32500 FEATURES • 4,194,304 words x 8 bit organization Byte mode 2,097,152 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 126 mW (MAX.) Standby: 108 µW (MAX.) • Static operation • Three-state outputs


    Original     		PDF LH53V32500 44-PIN 44-pin, 600-mil 48-pin, LH53V32500 32M-bit 48TSOP 48-PIN

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


    Original     		PDF MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel

    Untitled

    Abstract: No abstract text available
    Text: LH53V32500 FEATURES • 4,194,304 words x 8 bit organization Byte mode TOP VIEW 44-PIN SOP S Standby: 108 |iW (MAX.) A-I8 C 43 —I a A 1 7 IZ 3 42 ^ 7 C 4 41 Zl Ag 5 40 Zl A10 6 39 ZI A-, -, 7 38 Zl a 12 8 37 Z IA , 3 9 36 ZI a a • Three-state outputs


    OCR Scan     		PDF LH53V32500 44-pin, 600-mil 48-pin, 44-PIN 44SOP OP044-P-0600)

    Untitled

    Abstract: No abstract text available
    Text: LH53V32500 FEATURES • 4,194,304 words x 8 bit organization Byte mode 2,097,152 words x 16 bit organization (Word mode) CMOS 32M (4M x 8/2M x 16) 3 V-Drive MROM PIN CONNECTIONS 4 4 -P IN S O P • Static operation • Three-state outputs - 4 4 □ a C 4 3


    OCR Scan     		PDF LH53V32500 44-pin, 600-mil 48-pin, 48TSOP TSOP048-P-1218)

    LHMN5

    Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
    Text: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word


    OCR Scan     		PDF LH5332600 32M-bit LH5332600N/T LHMN56XX/LHMN5FXX) 32\l-bit 304X8 LH5332600N 44-pin OP044-P-0600) LH5332600T LHMN5 48TSOP LH5332600 LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


    OCR Scan     		PDF 28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235

    lh5s4

    Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
    Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.


    OCR Scan     		PDF LH531000BN-S LH53V2P00AN/AT LH53V4P00N/T LH53V8500N/T LH53V16500AN/AT LH53V32500AN-2 LH53V32500AT-2 LH53V64P00T LH53V64POON LH53V12800T lh5s4 lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46

    A-1435

    Abstract: No abstract text available
    Text: • 4,194,304 words x 8 bit organization Byte mode 2,097,152 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 126 mW (MAX.) Standby: 108 (iW (MAX.) • Static operation • Three-state outputs • Low power supply: 2.7 V to 3.6 V


    OCR Scan     		PDF LH53V32500 44-pin, 600-mil 48-pin, 44-PIN LH53V32500 32M-bit LHS3V32500 48TSOP TSOP048-P-1218) A-1435

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time


    OCR Scan     		PDF 28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


    OCR Scan     		PDF LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

    lh5s4

    Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
    Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T


    OCR Scan     		PDF LH53V4T00E LH53V4ROOAN/AT LH53V4R00N/T LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T LH534A00T LH534BOOT lh5s4 LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    LHMN5

    Abstract: sharp mask rom 44-pin LH5332600N 2MX16 LH5332600 LH5332600T LH5332C00D LH535
    Text: LH5332600 • Description High-speed 32M-bit Mask-Programmable ROM Pin Connections . The LH5332600N/T User’s No. : LHMN56XX/LHMN5FXX is a CMOS 32M-bit mask-programmable ROM organized as 4 194 3 0 4 X 8 bits (Byte mode) or 2 097 152 X 16 bits (Word mode) that can be selected by BYTE input pin.


    OCR Scan     		PDF LH5332600 32M-bit LH5332600N/T LHMN56XX/LHMN5FXX) 304X8 194304X8 100mA LH5332600N 44-pin LHMN5 sharp mask rom 44-pin 2MX16 LH5332600 LH5332600T LH5332C00D LH535

    IR2E01

    Abstract: LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901
    Text: Index Model No. A R M 7 D C PU C o re B i-C M O S 1 28 4 0 ,4 2 C 62 IR 3 Y 1 2 A 50 LH1532 49 LH 531V 00 2.4 IR 2 E 2 8 62 IR 3 Y 1 4 50 LH1536 49 LH 532000B 3,4 IR 2 E 2 9 62 IR 3 Y 1 5 50 LH 1540A 49 L H 5 3 2 00 0 B -1 3,4 IR 2 E 3 0 62 IR 3 Y 1 6 50


    OCR Scan     		PDF IR3Y21 LH1532 LH1536 LH1548 LH1549 LH1555 LH1556 LH1559 LH1560 LH1562 IR2E01 LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901