Untitled
Abstract: No abstract text available
Text: LH53CV32P00 FEATURES • 4,194,304 x 8 bit organization Byte mode: BYTE = VIL 2,097,152 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: – Operating: 100 mA (MAX.)
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LH53CV32P00
48-pin
LH53CV32P00
32M-bit
silicon-gaCV32P00
48TSOP
TSOP048-P-1218)
48-pin,
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Untitled
Abstract: No abstract text available
Text: LH53CV16P00 FEATURES • 2,097,152 x 8 bit organization Byte mode: BYTE = VIL 1,048,576 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: – Operating: 85 mA (MAX.)
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LH53CV16P00
48-pin,
LH53CV16P00
16M-bit
modeCV16P00
48TSOP
TSOP048-P-1218)
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sharp mask rom
Abstract: No abstract text available
Text: LH53C16600 16M Mask ROM Ref No.: NP 188C Issue Date: September 1997 High-Speed 16M-bit Mask-Programmable ROM with Page Mode Operation LH53C16600 • ■ Description The LH53C16600D/N User’s No. : LH-5C76XX is a CMOS 16M-bit mask-programmable ROM organized as 2 097 152 X 8
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LH53C16600
LH53C16600D/N
LH-5C76XX)
16M-bit
42-pin
sharp mask rom
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marking code GIF
Abstract: NMB MANUFACTURER DDEE177 LH53C8600N CD0-D15
Text: SHARP LH53C8S00N C L O N T E N T S General Description P. 2 2. Features P. 2 3. Block Diagrai P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute laxiauatatings P. 5 7. Operating Kanges P. 5 î, P.C. Electrical Characteristics P.5 9. A. C. Electrical Characteristics
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LH53C8
002217b
LHKJSxxQJ53C3600H)
S0P44-P-800
AA10S0
OP600SPK-A2
CV64S
marking code GIF
NMB MANUFACTURER
DDEE177
LH53C8600N
CD0-D15
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Untitled
Abstract: No abstract text available
Text: LH53CV32800T 32M Mask ROM Model No.: LHME53xx Spec No.: EL097130 Issue Date: July 28, 1998 SHARP LH53CV32800T •Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited
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LH53CV32800T
LHME53xx)
EL097130
LH53CV32800T
TSOP48-P-1218
AA1046
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Untitled
Abstract: No abstract text available
Text: LH53C32600N 32M Mask ROM Model No.: LHMC56xx Spec No.: EL097186 Issue Date: August 5, 1997 SHARP LH53C32600N # Handle this docuaent carefully for it contains aaterial protected by international copyright law. Any reproduction, full or in part, of this laterial is prohibited
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LH53C32600N
LHMC56xx
EL097186
S0P44-P-600
AA10S0
CV648
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flash 64m
Abstract: No abstract text available
Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161
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100ns
120ns
150ns
256kj
LH53259
LH53517
LH531V00
LH530800A
LH531024
LH532048
flash 64m
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AA1050
Abstract: marking code maxim label
Text: SHARP SPEC No. E L 0 9 9 1 9 3 ISSUE: Nov. 26 1997 To ; S P E C I F I CAT I O N S Product Type 8M b it MASK ROM LHMC8 6 xx Model No. L H 5 3 C 8 6 00N &This specifications contains 14 pages including the cover and appendix If you have any objections, please contact us before issuing purchasing order.
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OP44-F-600
AA1050
CV648
LH53C8600N
AA1050
marking code maxim label
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LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
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109-n
GL1PR112.
GL1PR135.
GL1PR136.
GL1PR211.
GL1PR212.
GL3KG63.
GL3P201.
GL3P202.
GL3P305.
LQ070T5BG01
LM24P20
LM162KS1
BSCR86L00
IR2C07
LM5Q31
IR3Y29B
BSCU86L60
lq6bw
lq6bw506
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Untitled
Abstract: No abstract text available
Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time
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28kx8
128kx
256kx
LH53H4000
LH532600
LH532000B-1
LH531000B
LH532000B
LH534600C
LH534P00B
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IR3Y29B
Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX
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ARM710
ARM810
IR3T24
IR3T24N
IR3Y05Y
IR3Y08
IR3Y12B
IR3Y18A
IR3Y21
IR3Y26A
IR3Y29B
ir3y26a1
IR4N
IR3T24N
IR3C08N
ir2c53
ir2c05
li3301
IR2E02
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Untitled
Abstract: No abstract text available
Text: CMOS 32M 4M x 8/2M x 16 MROM FEATURES • 4,194,304 x 8 bit organization (Byte mode: BŸTË = V,L) 2,097,152 x 16 bit organization (Word mode: BYTE = V,H) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: -O p e ra tin g : 100 mA (MAX.)
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48-pin
D15/A_
LH53CV32P00
48TSOP
TSOP048-P-1218)
LH53CV32PQQ
48-pin,
TSQP048-P-1218)
LH53CV32P00T
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lh5359
Abstract: e5bx
Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.
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LH-532KXX
LH532100BD/BN/BT/BS/BSR/BU
532048D
53V2P00A
532600D
532000B
532000BD
LH-532C
LH-5326XX
lh5359
e5bx
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sharp mask rom
Abstract: mask rom compatible pinout
Text: MEMORIES M ask ROMs ★ Mask ROM Specific Pinout • 3 V 3 .3 V operation Capacity Bit configuration A ccess time • 5 V operation Capacity Bit configuration Access time Under development MEMORES ★ Underdevelopment I Page Mode Specification (Mask ROM Specific Pinout)
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LH53B8600
LH53B4P00
LH53B8P00B
LH53B8V00
83C8800Á
LH53C16HQ0A
LH53B16P00B
16/x32
LH53B16R00
sharp mask rom
mask rom
compatible pinout
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IR2E27A
Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080
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Core28
IR2C24A/AN
IR2C26
IR2C30/N
IR2C32
IR2C33
IR2C34
IR2C36
IR2C38/N
IR2C43
IR2E27A
IR2C53
IR2E02
IR2E27
IR2E10
IR3N34
IR2E31A
IR2E01
IR2C07
ir2e31
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Untitled
Abstract: No abstract text available
Text: CMOS 16M 2 M x 8/ 1M x 16 MROM FEATURES PIN CONNECTIONS • 2,097,152 x 8 bit organization (Byte mode: BYTE = V,L) 1,048,576 x 16 bit organization (Word mode: BYTE = V,H) 48-PIN TSOP (Type I) BYTE C A-I6 C A15 IZ • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.)
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48-pin,
48-PIN
53CV16P00-3
LH53CV16P00
LH53CV16P00
TSOP048-P-1218)
LH53CV16P00T
53CV16P00-5
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LHMD09
Abstract: No abstract text available
Text: MEMORIES ★ U nderdevelopm ent • Page Mode Specification Mask ROM Specific Pinout • 3 .3 V operation B it C apacity configuration 8M 16M x 8/x 16 x 8/x 16 x 16/x 32 x 8/x 16 32M x 16/x 32 64M x 16/x 32 128M x 16/x 32 Model No. LH53BV8600D/N LH53BV8600T
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LH-5D86XX
LH-5D80XX
LH-ME78XX
LH-MD79XX
LH-ME58XX
LH-ME53XX
LH-MD50XX
LH-MD57XX
LH-MD09XX
LH-MD19XX
LHMD09
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sharp mask rom
Abstract: mask rom 44-pin
Text: LH530800A I CMOS 1M 128K x 8 Mask Programmable ROM FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 193 mW (MAX.) Standby: 550 (iW (MAX.) • Fully static operation • TTL compatible I/O • 32-PIN DIP
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LH530800A
32-pin,
600-mil
525-mil
44-pin,
32-PIN
LH530800A
LH53C
sharp mask rom
mask rom 44-pin
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