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    LD 1509 Search Results

    LD 1509 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LT1509CN#PBF Analog Devices Pwr Factor & PWM Cntr Visit Analog Devices Buy
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    LD 1509 Price and Stock

    Samtec Inc TW-15-09-L-D-236-SM-A-P-TR

    Board to Board & Mezzanine Connectors Flexible Surface Mount Board Stacking Header, 2.00 mm Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TW-15-09-L-D-236-SM-A-P-TR 125
    • 1 $6.3
    • 10 $6.3
    • 100 $5.29
    • 1000 $3.45
    • 10000 $2.65
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    Samtec Inc TW-08-03-L-D-315-095

    Board to Board & Mezzanine Connectors Flexible Surface Mount Board Stacking Header, 2.00 mm Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TW-08-03-L-D-315-095 68
    • 1 $3.23
    • 10 $3.23
    • 100 $2.24
    • 1000 $1.48
    • 10000 $0.64
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    Samtec Inc TW-10-04-L-D-315-098

    Board to Board & Mezzanine Connectors Flexible Surface Mount Board Stacking Header, 2.00 mm Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TW-10-04-L-D-315-098 60
    • 1 $4.17
    • 10 $4.17
    • 100 $2.88
    • 1000 $1.91
    • 10000 $1.26
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    Samtec Inc ZW-15-09-L-D-295-200

    Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZW-15-09-L-D-295-200 50
    • 1 $4.43
    • 10 $4.43
    • 100 $3.07
    • 1000 $2.12
    • 10000 $1.52
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    Samtec Inc MTMM-115-09-L-D-330

    Headers & Wire Housings Variable Post Height Header Strips, 2.00 mm Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MTMM-115-09-L-D-330 37
    • 1 $4.59
    • 10 $4.59
    • 100 $3.67
    • 1000 $2.39
    • 10000 $1.11
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    LD 1509 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LD247

    Abstract: 471 0940 LD1101 ld1221r PVC-22KT-L/22KT-LD1
    Text: LD Series Metalized Drum Core Power Inductor Applications • Buck or boost inductor • Noise filtering and output filter chokes • Computers • Power supplies • Test equipment instrumentation Environmental Data • Storage temperature: -40°C to +125°C


    Original
    PDF BU-SB07325 LD247 471 0940 LD1101 ld1221r PVC-22KT-L/22KT-LD1

    IRF610

    Abstract: power MOSFET IRF610 33a marking
    Text: International S Rectifier P D -9.3261 IRF610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 lD = 3.3A Description DATA SH EETS


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    PDF IRF610 O-220 IRF610 power MOSFET IRF610 33a marking

    1RF620

    Abstract: 1RF620S 317H IRF620 RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015
    Text: PD-9.317H International IiorIRectifier IRF620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Vdss=200V R DS{on - 0 - 8 0 ^ lD = 5.2A Description DATA SHEETS


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    PDF IRF620 O-220 2SRF620S 1RF620 1RF620S 317H RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015

    irfbf30

    Abstract: Diode IOR 10 dc
    Text: International S Rectifier PD-9.616A IRFBF30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 900V ^DS on = 3 -7 ^ lD = 3.6A Description DATA SHEETS


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    PDF IRFBF30 O-220 T0-220 lrTtQIT13tà irfbf30 Diode IOR 10 dc

    IRF710

    Abstract: No abstract text available
    Text: PD-9.327J International S Rectifier IRF710 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 400V ^D S on = 3 - 6 0 lD = 2.0A Description DATA SHEETS


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    PDF IRF710 O-220 T0-220 IRF710

    IRF9630

    Abstract: MOSFET IRF9630
    Text: PD-9.352F International S S Rectifier IRF9630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V = 0-80Q R DS on lD = -6.5A Description


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    PDF IRF9630 -200V O-220 T0-220 IRF9630 MOSFET IRF9630

    USSR DIODE

    Abstract: IRF730
    Text: PD-9.308K International r]Rectifier IRF730 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n = 1 lD = 5 .5A Description D ATA


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    PDF IRF730 O-220 USSR DIODE IRF730

    IRFBG30

    Abstract: ior 481 mosfet PD962 IBC30 9620a 9620* diode
    Text: PD-9.620A International S Rectifier IRFBG30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 5 -0 ß lD = 3.1 A Description DATA SHEETS


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    PDF IRFBG30 O-220 IRFBG30 ior 481 mosfet PD962 IBC30 9620a 9620* diode

    IRFZ24

    Abstract: M150 rectifier
    Text: PD-9.594A International iioR Rectifier IRFZ24 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements 60V ^DSS - ^DS on - 0.1 O il lD = 1 7 A Description DATA


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    PDF IRFZ24 O-220 IRFZ24 M150 rectifier

    315J

    Abstract: IRF720 ScansUX1018
    Text: PD-9.315J International i“r Rectifier IRF720 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = 400V ^DS on — 1 - 8 0 lD = 3.3A Description DATA


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    PDF IRF720 O-220 150KCÃ 315J ScansUX1018

    100-C

    Abstract: IRFBG20 MOSFET 1000v 10a IRFBG20 TO-220
    Text: PD-9.604A International S Rectifier IRFBG20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 11 ß lD = 1.4 A Description DATA SHEETS


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    PDF IRFBG20 O-220 100-C IRFBG20 MOSFET 1000v 10a IRFBG20 TO-220

    1RF9640

    Abstract: IRF9640 9422B 422B
    Text: PD-9.422B International S Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V ^DS on = 0-50É2 lD = -1 1 A Description


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    PDF IRF9640 -200V O-220 T0-220 1RF9640 IRF9640 9422B 422B

    IRF614

    Abstract: circuit TOP 242 PN international rectifier irf614
    Text: International S ] Rectifier PD-9.475B IRF614 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 2 0 i 2 lD = 2.7A Description DATA SHEETS


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    PDF IRF614 O-220 IRF614 circuit TOP 242 PN international rectifier irf614

    1RF640

    Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note
    Text: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA


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    PDF IRF640 T0-220 O-220 1RF640 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s 1D11A IRF640 smd IRF640 applications note

    1RFZ14

    Abstract: AN-994 IRFZ14 IRFZ14S SMD-220 GIJ rectifier smd marking 3xf GIJ diode
    Text: PD-9.507B International »»Rectifier ÌRFZ14 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ D SS- 60V R D S on - 0 .2 0 0 , lD = 10A Description


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    PDF IRFZ14 O-220 T0-220 1RFZ14 AN-994 IRFZ14S SMD-220 GIJ rectifier smd marking 3xf GIJ diode

    smd diode WW1

    Abstract: smd diode marking ww1 ww1 smd 1rfz46 smd ww1 14 SMD ww1 smd ww1 99 IRFZ46 AN-994 IRFZ46S
    Text: PD-9.827 International Rectifier IRFZ46 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^d ss - 50 V ^DS on = 0 - 0 2 4 0 lD = 50* A Description DATA


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    PDF IRFZ46 0-024O O-220 smd diode WW1 smd diode marking ww1 ww1 smd 1rfz46 smd ww1 14 SMD ww1 smd ww1 99 AN-994 IRFZ46S

    1RF820

    Abstract: GIJ diode IRF820 ScansUX1021 ScansUX102 RD1001
    Text: International Ek ] Rectifier PD-9.3240 IRF820 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 5 0 0 V R DS on = 3 -0 ß lD = 2 .5 A Description


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    PDF IRF820 O-220 1RF820 GIJ diode ScansUX1021 ScansUX102 RD1001

    DIODE marking 7BA

    Abstract: IRF9540 IRF9540 mosfet IRF9540 application RD24A
    Text: International S Rectifier PD-9.421C IRF9540 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s - -1 0 0 V ^DS on = 0 . 2 0 0 lD = -1 9 A


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    PDF IRF9540 O-220 -100V DIODE marking 7BA IRF9540 IRF9540 mosfet IRF9540 application RD24A

    IRF820

    Abstract: top 258 pn
    Text: PD-9.3240 International S Rectifier IRF820 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 500V ^DS on = lD = 2.5A Description DATA SH EETS Third Generation HEXFETs from International Rectifier provide the designer


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    PDF IRF820 O-220 IRF820 top 258 pn

    IRF624

    Abstract: RG-185 9472
    Text: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer


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    PDF IRF624 O-220 IRF624 RG-185 9472

    pj 54 diode

    Abstract: IRFBF20 pj 47 diode
    Text: PD-9.607A International S Rectifier IRFBF20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 900V R DS on = lD = 1.7A Description DATA SH EETS Third Generation HEXFETs from International Rectifier provide the designer


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    PDF IRFBF20 O-220 T0-220 IT13tà pj 54 diode IRFBF20 pj 47 diode

    1RFZ24

    Abstract: smd WV1 smd diode marking 1Ss 6ct smd AN-994 IRFZ24 IRFZ24S SMD-220 smd diode WV1 smd WV1 15
    Text: PD-9.594A International jgg Rectifier IRFZ24 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V p ss - 60 V R DS on = 0 .1 0 0 lD = 1 7 A Description


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    PDF IRFZ24 O-220 50KIi 1RFZ24 smd WV1 smd diode marking 1Ss 6ct smd AN-994 IRFZ24S SMD-220 smd diode WV1 smd WV1 15

    1RF740

    Abstract: mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet
    Text: PD-9.375H International lïsRi Rectifier IRF740 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^DS on = 0 - 5 5 0 lD = 10A Description Third Generation HEXFETs from international Rectifier provide the designer


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    PDF O-220 L50KQ 1RF740 mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet

    Untitled

    Abstract: No abstract text available
    Text: RoHS 2002/95/EC Ld LE]Dl PDLAR [TY PIN 13 PIN 14 CDLDR + YELLDW _l THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PR O PRIETA RY' TO BEL FUSE INC, AND SH ALL NOT BE CDPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPR O VAL OF B EL FUSE INC. D2 PDLAR ITY


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    PDF 2002/95/EC 350juH 65MHz 65MHz 100MHz 100MHz 125MHz 5MHz-40MHz 40MHz-100MHz f/80M