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    LC90 Price and Stock

    Rochester Electronics LLC MC68HLC908QY4CP

    MICROCONTROLLER, 8 BIT, FLASH, H
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    STMicroelectronics SMP100LC-90

    THYRISTOR 90V 400A DO214AA
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    DigiKey SMP100LC-90 Reel 5,000 2,500
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    SMP100LC-90 Cut Tape 1,802 1
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    Mouser Electronics SMP100LC-90 528
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    STMicroelectronics SMP100LC-90 528 1
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    Bristol Electronics SMP100LC-90 2,500
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    Avnet Silica SMP100LC-90 16 Weeks 2,500
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    EBV Elektronik SMP100LC-90 16 Weeks 2,500
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    Rochester Electronics LLC MC68HLC908QY2CDW

    IC MCU 8BIT 1.5KB FLASH 16SOIC
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    DigiKey MC68HLC908QY2CDW Bulk 272 167
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    Rochester Electronics LLC MC68HLC908QY1CDW

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    MC68HLC908QY1CDW Bulk 252 197
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    Belden Inc FT3LC900PS01

    FX PIGTAIL OM3 LC_SX TB_900
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    DigiKey FT3LC900PS01 Bulk 36 1
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    Find more LC90 price and stock on Findchips.com

    LC90 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LC-9.0 Bivar Optics - LEDs - Light Pipes, Optoelectronics, LIGHT PIPE 4MM RND LENS 9.0" Original PDF
    LC9.0 Microsemi Low Capacitance TVS; Package: DO-13; Ppp (W): 1500; Vwm (V): 9; VC (V): 16.9; ID ( uA): 10; Tol (%): 10; Original PDF
    LC90 Microsemi Low Capacitance TVS; Package: DO-13; Ppp (W): 1500; Vwm (V): 90; VC (V): 160; ID ( uA): 5; Tol (%): 10; Original PDF
    LC9.0 Microsemi TVS - Diodes, Circuit Protection, TVS DIODE 9VWM 16.9VC DO202AA Original PDF
    LC90 Microsemi TVS - Diodes, Circuit Protection, TVS DIODE 90VWM 160VC DO202AA Original PDF
    LC9.0 Microsemi Transient Absorption Zener Scan PDF
    LC90 Microsemi Transient Absorption Zener Scan PDF
    LC90 Microsemi Transient Absorption Zener Scan PDF
    LC9.0A Microsemi Low Capacitance TVS; Package: DO-13; Ppp (W): 1500; Vwm (V): 9; VC (V): 15.4; ID ( uA): 10; Tol (%): 5; Original PDF
    LC90A Microsemi Low Capacitance TVS; Package: DO-13; Ppp (W): 1500; Vwm (V): 90; VC (V): 146; ID ( uA): 5; Tol (%): 5; Original PDF
    LC9.0A Microsemi TVS - Diodes, Circuit Protection, TVS DIODE 9VWM 15.4VC DO202AA Original PDF
    LC90A Microsemi TVS - Diodes, Circuit Protection, TVS DIODE 90VWM 146VC DO202AA Original PDF
    LC9.0A Microsemi Transient Absorption Zener Scan PDF
    LC90A Microsemi Transient Absorption Zener Scan PDF
    LC90A Microsemi Transient Absorption Zener Scan PDF
    LC90A/TR Microchip Technology TVS DIODE 90VWM 146VC DO202AA Original PDF
    LC9.0A/TR Microchip Technology TVS DIODE 9VWM 15.4VC DO202AA Original PDF
    LC90/TR Microchip Technology TVS DIODE 90VWM 160VC DO202AA Original PDF
    LC9.0/TR Microchip Technology TVS DIODE 9VWM 16.9VC DO202AA Original PDF

    LC90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LC901

    Abstract: No abstract text available
    Text: BOLT SENSORS WITH MOUNTING WASHERS LC901 Series Load Washers TOP WASHER D DIA. LC900 Series Compression 0-2,000 lb to 0-100,000 lb 0-9,000 N to 0-450,000 N Model LC901-1⁄4-5K Shown Larger Than Actual Size SENSOR B DIA. E DIA. A DIA. W W BOTTOM WASHER C 4 FT.


    Original     		PDF LC901 LC900 LC901-1â LC901 DP25-S LC901-1 5-100K DP41-W, DP41-S,

    lcr80

    Abstract: marking lc8 IEC61000-4-4 LC170A LCE170A MIL-PRF19500 SMCGLCE170A SMCJLCE170A ARINC 712 jantx rectifier 5A
    Text: LC6.5 thru LC170A 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE DO-13 DO-202AA WWW . Microsemi .C OM DESCRIPTION This hermetically sealed Transient Voltage Suppressor (TVS) product family includes a rectifier diode element in series and opposite direction to achieve low


    Original     		PDF LC170A DO-13 DO-202AA) IEC61000-4-5 RTCA/DO-160D IEC61000-4-2 lcr80 marking lc8 IEC61000-4-4 LC170A LCE170A MIL-PRF19500 SMCGLCE170A SMCJLCE170A ARINC 712 jantx rectifier 5A

    Untitled

    Abstract: No abstract text available
    Text: ENL INSTR/ POW ER ^ SbE D General 5 ^ Sem iconductor ^ Industries, Inc. • 3 0 ^ 0 13 7 0 0 0 4 ^1 5 SS4 ■ £ IC Tr a n s Z o r b ® TRANSIENT VOLTAGE SUPPRESSORS T-11-23 LOW CAPACITANCE LC6.5 THRU LC90A FEATURES APPLICATION • 1500 watts Peak Pulse Power


    OCR Scan     		PDF T-11-23 LC90A

    Untitled

    Abstract: No abstract text available
    Text: H b û b 2 2 b 0 0 0 1 Ö 0 3 ^21 I IX Y ID IXYS IG B T w ith D io d e ÌX S N 3 0 N 10 0 A U 1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 é * 'T i Symbol Test Conditions V«s Tj = 25°C to 150°C 1000 V v«* Tj = 25°C to 150°C; RGE= 1 M£2


    OCR Scan     		PDF D-68619; 4bflb22b D-68619

    Untitled

    Abstract: No abstract text available
    Text: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK30N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C


    OCR Scan     		PDF N60CD1 IXSK30N60CD1 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C


    OCR Scan     		PDF IXGH20N30 IXGH20N30S TQ-247 20N30S) O-247

    28N30

    Abstract: No abstract text available
    Text: r i T v v < v HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ ^fi(typ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ 300 V v GES


    OCR Scan     		PDF 28N30 28N30 O-268 O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400


    OCR Scan     		PDF 40N140 40N160 O-247 40N160 D-68623

    GAL20V8

    Abstract: gal20v8 application
    Text: rZ Z S C S -T H O M S O N * 7 # RjflD^iIUiOT OîOD®i GAL20V 8 E2CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — Guaranteed 100% Yields ■ HIGH PERFORMANCE E*CMOS TECHNOLOGY


    OCR Scan     		PDF GAL20V 90f70mA 45/35mA 24-pin LC9000 GAL20V8 gal20v8 application

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C


    OCR Scan     		PDF IXSK35N120AU1 O-26re IXSK35N120AU1

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C


    OCR Scan     		PDF IXSX35N120AU1 IXSX35N120All O-247â IXSX35N120AU1S) IXSX35N120AU1S

    ixgh40n30

    Abstract: No abstract text available
    Text: □ IXYS VCES HiPerFAST IGBT IXGH40N30/S IXGH40N30A/S IXGH40N30B/S ^C25 600 V 60 A 600 V 60 A 600 V 60 A V CE sat 1.8 V 2.1 V 2.4 V t. 220ns 120ns 75 ns Preliminary data TO-247 SMD* Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300


    OCR Scan     		PDF IXGH40N30/S IXGH40N30A/S IXGH40N30B/S 220ns 120ns O-247 ixgh40n30

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Preliminary data Low -u vv V v ICE sat High speed IGBT with Diode V " ces 1000 V IXGH25N100U1 IXGH25N100AU1 1000 V ^C25 50 A 50 A V v CE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES ^ v CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100U1 IXGH25N100AU1

    Untitled

    Abstract: No abstract text available
    Text: Transient Voltage Suppressors I Part Number TVS JAN1N6063A JANTX1N6063A JANTXV1N6063A 1N6167 1N6167US JAN1N6167 JAN1N6167US JANTX1N6167 JANTX1N6167US JANTXV1N6167 J ANTXV1N6167US 1N6167A 1N6167AUS JAN1N6167A JAN1N6167AUS JANTX1N6167A JANTX1N6167AUS J ANTXV1N6167A


    OCR Scan     		PDF TVS-78

    Untitled

    Abstract: No abstract text available
    Text: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient


    OCR Scan     		PDF 50N60BU1 50N60BU1 to150 PLUS247TM O-264AA IXSX50N60BU1

    Untitled

    Abstract: No abstract text available
    Text: Hi Per FAST IGBT with Diode IXGH 32N60BD1 CES CE sat Combi Pack t f1 600 60 2.2 80 V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j =25° C to 150° C 600 V VCGR T j = 25° C to 150° C; RGE= 1 M ii 600 V v GES Continuous


    OCR Scan     		PDF 32N60BD1 O-247

    50N60A

    Abstract: IXGH50N60AS IXGH50N60A
    Text: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600


    OCR Scan     		PDF 50N60A 50N60AS O-247 D94006DE, IXGH50N60AS IXGH50N60A

    st 247

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 1400/1600 V 33 A 7V 30 ns CES ^C25 v CE sat t N-Channel, Enhancement Mode TO-247 AD S ym b o l T est C o n d itio n s M axim um R atings


    OCR Scan     		PDF 40N140 40N160 O-247 40N160 st 247

    7N60C

    Abstract: LI 20 AB
    Text: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V


    OCR Scan     		PDF 7N60C 7N60C O-22QAB O-263 LI 20 AB

    92520E

    Abstract: No abstract text available
    Text: DIXYS IXSN 55N120AU1 High Voltage IGBT with Diode V CES IC25 vCE sat 1200 V 110 A 4V Short Circuit SOA Capability Symbol Test Conditions VCES v CGB Tj = 25°Cto150°C Tj = 25° C to 150° C; v GES Continuous Transient v GEM IC25 'c 9 0 ' cm SSOA (RBSOA) Maximum Ratings


    OCR Scan     		PDF 55N120AU1 Cto150 OT-227 E153432 92520E

    52N60A

    Abstract: 52N60 1XSN52N60AU1
    Text: IGBT with Diode IXSN 52N60AU1 VCES I = 600 V = 80 A = 3V C25 v CE sat Short Circuit SOA Capability Symbol V CES Test Conditions T, = Maximum Ratings 25°C to 150CC V 600 Tj = 25°C to 150°C; Rge = 1 Mfi 600 A v" g e s Continuous ±20 V vy g e m T ransient


    OCR Scan     		PDF 52N60AU1 OT-227B, 52MB0AU1 52N60A 52N60 1XSN52N60AU1

    dc servo igbt

    Abstract: No abstract text available
    Text: n i x Y S IGBT with Diode IXSN 80N60AU1 VCES I C25 vv CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary data Symbol Maximum Ratings Test Conditions v CES T j = 25° C to 150° C 600 V vt c g r T j = 25° C to 150° C; RG6 = 1 M£2 600 A V G ES


    OCR Scan     		PDF 80N60AU1 OT-227 E153432 dc servo igbt

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IX G H 2 0 N 1 0 0 IX G T 2 0 N 1 0 0 V CES ^C25 v CE sat ¡>c Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 1000 V V CGR T j = 25° C to 150° C; RGE = 1 MQ 1000 V v GES Continuous ±20 V VGEM Transient


    OCR Scan     		PDF O-268 O-247 O-268

    IXGH32N60B

    Abstract: No abstract text available
    Text: HiPerFAST IGBT IXGH 32N60B IXGH 32N60BS vCES ^C25 v* CE sat = = = = 600 V 60 A 2.5 V 80 ns ÒE Maximum Ratings Symbol Test Conditions VCEs T j = 2 5 °C to 1 5 0 °C 600 V VCOR v GES T, = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V v GEM Transient


    OCR Scan     		PDF 32N60B 32N60BS B2-73 IXGH32N60B