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    Untitled

    Abstract: No abstract text available
    Text: N E C T~4<-<97 L457SBS 0 D 2 ci4SS 4 3GE D LIGHT EMITTING DIODE ELECTRONICS INC NDL5312P 1 300 nm O PT IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE DESC RIPTIO N NDL5312P is a 1300 nm InGaAsP double heterostructure LED module with fiber pigtail. It can achieve high speed response


    OCR Scan     		PDF L457SBS NDL5312P NDL5312P DL5312P L4575E5

    for1a

    Abstract: 2SJ137 2SJ13
    Text: N E C ELECTRONICS INC Tfl DE|L457SBS GDnGSl PRELIMINARY SFEClFiCAT.C'MOS FIELD EFFECT T RAN' S I S T C: 2S J 137 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET PACKAGE DIM EN SIO N S Features Unit : mm Suitable for switching power supplies, actuator controls and pulse circuits


    OCR Scan     		PDF 2SJ137 T-39-19 L42752S CHARAC7E2IS71CS J2263S for1a 2SJ137 2SJ13

    MJ 15007 transistor

    Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent