l21 code
Abstract: PDI1394L21 Explained
Text: PDI1394L21 Full Duplex Link Layer Controller IC Differences Between L11 and L21 30 December 1998 General Functional Changes and Additions : 1. L21 is a full duplex isochronous part, now has 2 AV ports and can transmit and receive isochronous data simultaneously during the same bus cycle .
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PDI1394L21
l21 code
Explained
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l21 code
Abstract: AN2453 ITM512LFT ITX100LFT ITX256LFT ITX512LFT PDI1394L11 PDI1394L21 8051 coding for data encryption standard EIR25
Text: INTEGRATED CIRCUITS ABSTRACT The scope of this application note is to make the developer aware of the difference between the L21 and the L11 and to provide the developer with the basic information needed in order to upgrade an application from the L11 to the L21. This application note concentrates
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AN2453
PDI1394L11)
PDI1394L21)
l21 code
AN2453
ITM512LFT
ITX100LFT
ITX256LFT
ITX512LFT
PDI1394L11
PDI1394L21
8051 coding for data encryption standard
EIR25
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BL-HZD33A-L21-TRB SINCE 1981 ● Features: 1. Emitted Color : White ●Package Dimensions: 2. Mono-color type. 3. 3.2x1.6x1.4mm 1206 standard package 4. Suitable for all SMT assembly methods. 5. Compatible with infrared and vapor phase
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BL-HZD33A-L21-TRB
60Max.
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BL-HZD33-L21-TRB SINCE 1981 ● Features: ●Package Dimensions: 1. Emitted Color : White 2. Mono-color type. 3. 3.2x1.6x1.1mm 1206 standard package 4. Suitable for all SMT assembly methods. 5. Compatible with infrared and vapor phase
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BL-HZD33-L21-TRB
60Max.
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Q 0265 R
Abstract: Q 0265
Text: BRIGHT LED ELECTRONICS CORP. BL-HZ333-L21-TRB SINCE 1981 ● Features: ●Package Dimensions: 1. Emitted Color : White 2. Mono-color type. 3. 3.2x1.6x1.1mm 1206 standard package 4. Suitable for all SMT assembly methods. 5. Compatible with infrared and vapor phase
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BL-HZ333-L21-TRB
60Max.
Q 0265 R
Q 0265
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Q 0265 R
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BL-HZ535A-L21-TRB SINCE 1981 ● Features: ●Package Dimensions: 1. Emitted Color : White 2. Mono-color type. 3. 2.0x1.25x1.0mm 0805 standard package 2.0(.079)± 0.2 4. Suitable for all SMT assembly methods. Cathode Mark 1.2(.047)
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BL-HZ535A-L21-TRB
60Max.
Q 0265 R
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Q 0265 R
Abstract: BL-HZ335A BL-HZ335A-L21-TRB
Text: BRIGHT LED ELECTRONICS CORP. BL-HZ335A-L21-TRB SINCE 1981 ● Features: 1. Emitted Color : White ●Package Dimensions: 2. Mono-color type. 3. 2.0x1.25x1.0mm 0805 standard package. 2.0(.079)± 0.2 Cathode Mark 1.2(.047) LED die 4. Suitable for all SMT assembly methods.
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BL-HZ335A-L21-TRB
60Max.
Q 0265 R
BL-HZ335A
BL-HZ335A-L21-TRB
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BAS31
Abstract: BAV19
Text: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
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BAS31
OT-23
BAV19
BAS31
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BAY84
Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
Text: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240
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350mW
BAL99
BAR99
BAS16
BAS19
BAS20
BAS21
BAS29
BAS31
BAS35
BAY84
BAY85S
D1850
SDBAX12
bay85
BAS21 A82
d53 MARKING CODE SOT23
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Untitled
Abstract: No abstract text available
Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2005 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY 1TCO ELECTRONICS CORPORATION. 2.729 + .0 15 10° 2X 0.120 2.1 82 10 11 l l21 20 C l22 l23 l24 l25 l26 l27 l 28 LTR C DESCRIPTION DATE DWN 4FEB2010 REVISED PER E C O -1 0 - 0 0 0 0 7 3
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4FEB2010
16SEPT05
31MAR2000
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philips twin eye
Abstract: SOT242 diiode philips "twin eye" laser diode philips
Text: Philips Components D E V E L O P M E N T DATA CQL21/D This data sheet contains advance information and specifications which are subject to change without notice. SMALL SIZE DOUBLE HETEROSTRUCTURE AIGaAs LASER G E N E R A L D E S C R IP T IO N The C Q L21/D is designed for reading applications such as video/audio disc applications, optical
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CQL21/D
CQL21/D
L21/D
100mW
philips twin eye
SOT242
diiode
philips "twin eye"
laser diode philips
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C621
Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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2N5508
Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N5508
2N1019
l53b 5
2N4241
BC138
2SJ11
Transistors 2n551
2N3523
2N550
2N551
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BC138 TRANSISTOR
Abstract: 2N4241 BD117 2N4042 BC138 transistor bc138 BC222 TRANSISTOR 2N4043 2N5508 2N5511
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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diff40V
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
BC138 TRANSISTOR
2N4241
BD117
2N4042
BC138
transistor bc138
BC222 TRANSISTOR
2N4043
2N5508
2N5511
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K1502
Abstract: l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. I I MIN. M A X Pc T 6 T T IDER A TE F R E E I'A E I J to C
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NPN110.
R038q
UC300
UC305
UC310
UC315
UC320
UC325
UC330
UC335
K1502
l61c
BFX82
K1501
2N4088
2N3113
RN1030
2N3379
RN1030A
l53b 5
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2N4241
Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N4241
OC74
CM601
2N4042
BSV39
2N3523
bc143
BC222 TRANSISTOR
ft06
200S
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2SK19Y
Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
2SK19Y
C682
2SK19GR
X70a
FSP400
40468
C621
K1202
C682A
C684
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transistor c640 npn
Abstract: 2N2458 l0ua 2N2457 mm2102t transistor C640 transistor 2n2457 RT1116 TIX882 IDSS-100mA
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
transistor c640 npn
2N2458
l0ua
2N2457
mm2102t
transistor C640
transistor 2n2457
RT1116
IDSS-100mA
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transistor k1502
Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
transistor k1502
dr 25 germanium diode
DIODE 10N 40D
2N3379
CA3036
K1502
K1501
2N5513
darlington 12V 6.2A
P1029
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U22 2.5A 250V
Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
U22 2.5A 250V
P1028
K1502
FSP400
BFX82
2N3379
C621
MT101B
TIX882
c644
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transistor C624
Abstract: T120TA 2N2457 B3 ho transistor C621 RT1111 2N1468 CK277 KVT 50/102n 3500 2SC502
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
transistor C624
T120TA
2N2457
B3 ho transistor
C621
RT1111
2N1468
CK277
KVT 50/102n 3500
2SC502
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SA2713
Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
SA2713
MA7809
MEM808
transistor k1502
RN1030A
UC320
RN3020
L17D
ML111B
ML132A
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P1027
Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
FT4020
FT4021
FT4022
BVCEO-45V
ICBO-10nA
BVCEO-60V
P1027
2N3379
P1069E
SD5011
UC-41
2N4088
K1502
RN1030
1203 6d
ML111B
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2n2709
Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
2n2709
C621
2N4411
c643
OC44
400M
BSV55AP
BSV55P
T072
GM300
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