Untitled
Abstract: No abstract text available
Text: SDS152K K SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Sin ngle genera al-purpose switching s diiodes, fabriccated in pla anar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
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SDS152K
OT-323
OT-323
25-AUG-10
KSD-D5D025-000
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smd marking ks
Abstract: smd diode marking 5d U SDS152K smd diode sot-323 marking code k smd diod fast pulse diod
Text: SDS152K K SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Sin ngle genera al-purpose switching s diiodes, fabriccated in pla anar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
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SDS152K
OT-323
OT-323
25-AUG-10
KSD-D5D025-000
smd marking ks
smd diode marking 5d U
SDS152K
smd diode sot-323 marking code k
smd diod
fast pulse diod
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very low leakage tvs
Abstract: "very low leakage" tvs TVS VISHAY current rating TVS
Text: Application Note Vishay General Semiconductor Series Stacking of TVS for Higher Voltages and Power HIGHER POWER By Bruce Hartwig Senior Automotive Applications Engineer HIGHER VOLTAGES In normal operation, a transient voltage suppressor should be invisible to the protected circuit. This is guaranteed by a
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5KE200
14-Aug-07
very low leakage tvs
"very low leakage" tvs
TVS VISHAY
current rating TVS
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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Untitled
Abstract: No abstract text available
Text: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDB2614
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Untitled
Abstract: No abstract text available
Text: FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
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FQP11P06
FQP11P06
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BZX75C1V4
Abstract: SAA3004
Text: D E V E LO P M E N T SAMPLE D A T A SAA3004 T h is in fo r m a tio n is d e riv e d fr o m d e v e lo p m e n t sam ples m ad e a v a ila b le f o r e v a lu a tio n , I t does n o t necessanty im p ly th a t th e d e v ic e w ill go in to regular p r o d u c tio n ,
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SAA3004
SAA3004
BZX75C1V4
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TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-0710
TRANSISTOR SMD MARKING CODE 1BW
SmD TRANSISTOR 1bw
transistor SMD 5BW
TRANSISTOR SMD MARKING CODE 1AM
5bw smd
smd code marking 5bw
KL SN 102 94v-0
smd transistor marking 3bw
smd transistor 1AM
yx 801
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Untitled
Abstract: No abstract text available
Text: FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
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FQD4P40
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Untitled
Abstract: No abstract text available
Text: FQP12P10 P-Channel QFET MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
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FQP12P10
FQP12P10
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Untitled
Abstract: No abstract text available
Text: FDB024N04AL7 N-Channel PowerTrench MOSFET 40 V, 219 A, 2.4 mΩ Features Description • RDS on = 2.0 m Ω (Typ.)@ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDB024N04AL7
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Untitled
Abstract: No abstract text available
Text: FQT2P25 P-Channel QFET MOSFET -250 V, -0.55 A, 4.0 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
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FQT2P25
OT-223
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Untitled
Abstract: No abstract text available
Text: FDP2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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FDP2710
O-220
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Untitled
Abstract: No abstract text available
Text: FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state
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FQB9P25
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Horizontal Transistor TT 2246
Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz
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HFA1105
HFA1115
350MHz
225MHz
000V/ps
50MHz.
Horizontal Transistor TT 2246
ca3080 spice
vogt transformer 406 69
CA3098 equivalent
ICL8038 applications advantages disadvantages
gi 9544
class d amplifier schematic hip4080
STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY
siemens transistor manual
BUF601
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Untitled
Abstract: No abstract text available
Text: FDB016N04AL7 N-Channel PowerTrench MOSFET 40 V, 306 A, 1.6 mW Features Description • RDS on = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDB016N04AL7
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Untitled
Abstract: No abstract text available
Text: PARAL P LLELING TU425 T 5-SER RIES P POWE ER APPLICATION NOTE SUPPLIE ES FO OR LO OAD S SHAR RING Purpo ose: This app plication note provides in nformation concerning paarallel operaation of the SLPE TU425-‐SERIES series power suppliees. Parallel operation offeers the abilityy to have red
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TU425
TU425â
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QRS0680T30
Abstract: DIODE ED 26
Text: QRS0680T30 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 www.pwrx.com Fast Recovery Diode Module 724 925-7272 Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy
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QRS0680T30
QRS0680T30
DIODE ED 26
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Untitled
Abstract: No abstract text available
Text: FDB2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored
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FDB2710
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4L3052
4L3056
wiring diagram audio amplifier ic 6283
germanium
Transistor Shortform Datasheet & Cross References
halbleiter index transistor
2N5160 MOTOROLA
transistor ITT 2907
1N5159
2N 5574
inverter welder 4 schematic
diagrams de ic lg 8838
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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ad9958 Application
Abstract: 500MSPS AD9958 AD9959 HIGH accurate ANALOG MULTIPLIER HIGH SPEED ANALOG MULTIPLIER AOTF human radar detection
Text: DUAL Channel 500MSPS DDS with 10-bit DACs AD9958 Preliminary Technical Data FEATURES Software/Hardware controlled power-down Dual supply operation 1.8 V DDS core / 3.3 V serial I/O Built-in synchronization for multiple devices Selectable REF CLK multipier(PLL) 4x to 20x (bypassable)
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500MSPS
10-bit
AD9958
32-bit
PR05252-0-11/04
ad9958 Application
AD9958
AD9959
HIGH accurate ANALOG MULTIPLIER
HIGH SPEED ANALOG MULTIPLIER
AOTF
human radar detection
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Fairchild Semiconductor DS-513
Abstract: No abstract text available
Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDP2614
O-220
Fairchild Semiconductor DS-513
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ZHCS1006TA
Abstract: bat54ata
Text: PCN-1122 PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: November 30, 2008 January 01, 2009 Schottky Diodes Additional wafer manufacturing location PCN #: 1122 TITLE Introduction of additional wafer manufacturing location DFT for Zetex schottky diodes
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PCN-1122
ZX3CD1S1M832TA
ZLLS350TA
ZLLS400TA
ZLLS410TA
ZLLS500TA
ZLLS2000TA
ZX3CD2S1M832TA
ZX3CD3S1M832TA
ZX3CDBS1M832TA
ZHCS1006TA
bat54ata
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