KRA307
Abstract: KRA308 KRA309 DSA00384749
Text: SEMICONDUCTOR KRA307~KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D 3 1 G ᴌReduce a Quantity of Parts and Manufacturing Process
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KRA307
KRA309
KRA307
KRA308
KRA308
KRA309
DSA00384749
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pj marking
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307V~KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design H G A ・High Packing Density. D 2
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KRA307V
KRA309V
KRA308V
KRA309V
KRA307V309V
pj marking
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KRA307E
Abstract: KRA308E KRA309E
Text: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design D H G A 2 Reduce a Quantity of Parts and Manufacturing Process
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KRA307E
KRA309E
KRA307E
KRA308E
KRA308E
KRA309E
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KRA307
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PH 1 2 Item Marking Description Device Mark PH KRA307 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRA307
KRA307
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307~KRA308 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors ・Simplify Circuit Design D G ・Reduce a Quantity of Parts and Manufacturing Process
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KRA307
KRA308
KRA308
KRA309
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design D DIM A B C D G A 2 H ・Reduce a Quantity of Parts and Manufacturing Process
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KRA307E
KRA309E
KRA308E
KRA307E
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KRA307E
Abstract: KRA308E KRA309E
Text: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process
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KRA307E
KRA309E
KRA308E
KRA307E
KRA308E
KRA309E
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KRA307E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PH No. Item Marking 1 Device Mark PH KRA307E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRA307E
KRA307E
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KRA307
Abstract: KRA308 KRA309
Text: SEMICONDUCTOR KRA307~KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors ・Simplify Circuit Design D 3 1 G ・Reduce a Quantity of Parts and Manufacturing Process
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KRA307
KRA309
KRA308
KRA307
KRA308
KRA309
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307V~KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/4
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KRA307V
KRA309V
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design D G A 2 C H Reduce a Quantity of Parts and Manufacturing Process
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KRA307E
KRA309E
KRA307E
KRA308E
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KRA307V
Abstract: KRA308V KRA309V
Text: SEMICONDUCTOR KRA307V~KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design G A 1 3 K H ᴌHigh Packing Density.
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KRA307V
KRA309V
KRA307V
KRA308V
KRA308V
KRA309V
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KRA307
Abstract: KRA308 KRA309
Text: SEMICONDUCTOR KRA307~KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D 3 1 G ᴌReduce a Quantity of Parts and Manufacturing Process
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KRA307
KRA309
KRA307
KRA308
KRA308
KRA309
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KRA307V
Abstract: KRA308V KRA309V
Text: SEMICONDUCTOR KRA307V~KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design G A 1 3 K H High Packing Density. D 2 Reduce a Quantity of Parts and Manufacturing Process
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KRA307V
KRA309V
KRA307V
KRA308V
KRA308V
KRA309V
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA307~KRA308 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 29 Revision No : 5 1/4
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KRA307
KRA308
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KRA307
Abstract: KRA308 KRA309
Text: SEMICONDUCTOR KRA307~KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors Simplify Circuit Design D 3 1 G Reduce a Quantity of Parts and Manufacturing Process
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KRA307
KRA309
KRA307
KRA308
KRA308
KRA309
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KRA307E-KRA309E TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S Î r — • With Built-in Bias Resistors • Simplify Circuit Design DIM
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OCR Scan
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KRA307E-KRA309E
KRA307E
KRA308E
KRA309E
KRA307E
RA309E
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MARK 006
Abstract: transistor 309 pj marking KRA307 KRA308 KRA309
Text: KEC KOREA ELECTRONICS CO.,LTD. KRA307 — SEMICONDUCTOR KRA309 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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KRA307
KRA309
KRA307
KRA308
KRA309
KRA307-309
KRA308
MARK 006
transistor 309
pj marking
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transistor 309
Abstract: No abstract text available
Text: KRA307SEMICONDUCTOR KRA309 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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OCR Scan
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KRA307SEMICONDUCTOR
EPITAXIALKRA309
KRA307
KRA309
KRA308
transistor 309
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Untitled
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KRA307V-KRA309V TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors • Simplify Circuit Design DIM
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OCR Scan
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KRA307V-KRA309V
KRA30
KRA308V
RA309V
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