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    Samsung Electro-Mechanics CL32B106KPINNNE

    CAP CER 10UF 10V X7R 1210
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    DigiKey CL32B106KPINNNE Cut Tape 1
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    CL32B106KPINNNE Digi-Reel 1
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    Samsung Electro-Mechanics CL32B106KPINFNE

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    CL32B106KPINFNE Digi-Reel 1
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    CL32B106KPINFNE Cut Tape 1
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    Samsung Electro-Mechanics CL32B106KPINNWE

    CAP CER 10UF 10V X7R 1210
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    CL32B106KPINNWE Digi-Reel 1
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    CL32B106KPINNWE Cut Tape 1
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    Samsung Electro-Mechanics CL32A106KPINNWE

    CAP CER 10UF 10V X5R 1210
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    DigiKey CL32A106KPINNWE Reel 160,000
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    CL32A106KPINNWE Digi-Reel 1
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    CL32A106KPINNWE Cut Tape 1
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    Avnet Americas CL32A106KPINNWE Reel 20 Weeks 160,000
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    Mouser Electronics CL32A106KPINNWE
    • 1 $0.25
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    Samsung Electro-Mechanics CL32A106KPINNNE

    CAP CER 10UF 10V X5R 1210
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    DigiKey CL32A106KPINNNE Cut Tape 1
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    CL32A106KPINNNE Digi-Reel 1
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    KPIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si PIN photodiodes S2506 series S6775 series S6967 Plastic SIP single in-line package S2506/S6775 series and S6967 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, highspeed response and large active areas.


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    S2506 S6775 S6967 S2506/S6775 S6967 S2506-02: S2506-04: S6775, S6967: S6775-01: PDF

    Untitled

    Abstract: No abstract text available
    Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance


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    S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E06 PDF

    far uv photodiode

    Abstract: Radiation Detector
    Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.


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    S1722-02 S1722-02 SE-171 KPIN1045E04 far uv photodiode Radiation Detector PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved despite the large active area.


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    S9195 S9195 SE-171 KPIN1068E01 PDF

    1NA101

    Abstract: S8890 APD S11519
    Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.


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    S11519 S8890 SE-171 KAPD1028E01 1NA101 APD S11519 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm


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    S5980, S5981, S5870 S5980: S5981: S5870: S5980 S5981 Topr44) PDF

    PIN Photodiode

    Abstract: S3590-19 Si PIN PHOTODIODE S3590-08
    Text: Si PIN photodiode S3590-08/-09/-18/-19 Large active area Si PIN photodiode Features Applications Sensitivity matching with BGO and CsI TI scintillators: S3590-08/-09 Scintillation detectors Sensitivity matching with blue scintillator (LSO, GSO, etc.): S3590-18/-19


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    S3590-08/-09/-18/-19 S3590-08/-09 S3590-18/-19 S3590-09/-19 S3590-09 S3590-19 S3590-08 S3590-09 S3590-18 S3590-19 PIN Photodiode Si PIN PHOTODIODE PDF

    Hamamatsu s6775

    Abstract: s6967 S6786
    Text: PHOTODIODE Si PIN photodiode S2506/S6775/S6967 series, S6786 Plastic SIP Single In-line Package S2506/S6775/S6967 series and S6786 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP (Single In-line Package) for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, high-speed


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    S2506/S6775/S6967 S6786 S6786 S2506-04: S6775, S6967: SE-171 KPIN1048E02 Hamamatsu s6775 s6967 PDF

    S3590

    Abstract: S3590-02
    Text: PHOTODIODE Si PIN photodiode S3590 series Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)


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    S3590 S3590-01 S3590-02 S3590-05 S3590-06 S3590-08 S3590-09 SE-171 KPIN1052E05 PDF

    pin Photodiode preamp

    Abstract: S6468-52 cl 740
    Text: PHOTODIODE Si PIN photodiode with preamp S6468-52 PIN photodiode/preamp device with enhanced violet sensitivity S6468-52 is a high-speed sensor incorporating a violet sensitivity-enhanced Si PIN photodiode and a preamplifier in the same package. S6468-52 is suitable for optical pickups using a violet laser and receivers in optical communications.


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    S6468-52 S6468-52 SE-171 KPIN1054E02 pin Photodiode preamp cl 740 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type


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    S3204/S3584 SE-171 KPIN1051E05 PDF

    S8591

    Abstract: No abstract text available
    Text: Patent Pending PHOTODIODE Si PIN photodiode S8591 Low capacitance and high-speed response at low reverse voltage S8591 is a Si PIN photodiode that provides low capacitance and high-speed response at low reverse voltage. S8591 was formed by micromachining techniques so that all areas except for the active area are completely insensitive to light. Patent pending


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    S8591 S8591 O2-3750, SE-171 KPIN1062E01 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S8463 Miniature, thin plastic package photodiode Features Applications l Clear plastic package: 3 x 4 × 1.3 t mm l Active area: φ0.8 mm l High sensitivity: 0.48 A/W Typ. λ=780 nm l High-speed response: 200 MHz Typ. (VR=5 V)


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    S8463 SE-171 KPIN1060E01 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow


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    S5980, S5981, S5870 S5980: S5981: S5870: S5980 S5981 KPIN1012E02 PDF

    STRAIN GAUGE

    Abstract: pressure sensor strain gauge mpx pressure sensor ekr 1000 motor silicon sensor strain gauge STRAIN GAUGE silicon MPX100 Application notes mpx100a MPX100 MPX100GS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA to 14.5 Psi Uncompensated Silicon Pressure MPXI 00 SERIES Sensors $,. “1{ ~.,?~ .,:,. ,. . .i- - The MPX100 series device is a silicon piezoresistive pressure sensor providing a vey accurate and linear voltage output — directly proportional to the


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    MPX100 xCase350-03 STRAIN GAUGE pressure sensor strain gauge mpx pressure sensor ekr 1000 motor silicon sensor strain gauge STRAIN GAUGE silicon MPX100 Application notes mpx100a MPX100GS PDF

    S5973

    Abstract: pin photodiode 10 ghz photodiode amplifier S5791 C4890 pin photodiode 20 ghz S5972 SE-171 PIN photodiode ps rise time avalanche photodiode
    Text: PHOTODIODE PIN photodiode amplifier C4890 Wide bandwidth amplifier 1.5 GHz, 20 dB C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain.


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    C4890 C4890 S5791, S5972, S5973, SE-171 KACC1055E01 S5973 pin photodiode 10 ghz photodiode amplifier S5791 pin photodiode 20 ghz S5972 PIN photodiode ps rise time avalanche photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: Si PINフォトダイオード S2744/S3588-08, -09 大面積Si PINフォトダイオード 特長 用途 BGOCsI TI シンチレータに適した感度 高量子効率 (未封止タイプ): QE=85 % (λ=540 nm) シンチレーション検出 低容量 TOFカウンタ


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    S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 KPINA0109JA KPINA0042JB KPIN1049J01 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PINフォトダイオード S8385/S8729シリーズ SIP型プラスチックパッケージ S8385/S8729シリーズは大面積汎用Si PINフォトダイオードです。従来品に比べ、パッケージを小型化 パッケージ容積比


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    S8385/S8729ã S8385, PIN1064J05 PDF

    TL500

    Abstract: TL500CJ tl502 L501C
    Text: TL500I, TL500C, TL501I, TL501C, TL502C, TL503C ANALOG-TO-DIGITAL-CONVERTER BUILDING BLOCKS D2477 DECEMBER 1979-REVISED JANUARY 1989 TL500I, TL500C, TL501I, TL501C ANALOG PROCESSORS • True Differential Inputs • Automatic Zero • Automatic Polarity •


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    TL500I, TL500C, TL501I, TL501C, TL502C, TL503C D2477 1979-REVISED TL500 TL500CJ tl502 L501C PDF

    st6116

    Abstract: IC 7400 data sheet mh 7400 93C95A ATM25 TM25
    Text: 93C95A ATM 25.6 MB Transceiver Technology, ,„ c o ,p o „ » d a n d D g ta R e C O V e ry lC April 8,1996 Features • Integrated A TM25 PMD Sublayer ■ Single Chip Interface Between TC Transmission


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    93C95A ATM25 MD400148/â flins33 st6116 IC 7400 data sheet mh 7400 93C95A TM25 PDF

    87CM70

    Abstract: p540c JRS 67 TLCS-870 TMP87CH70BF TMP87CM70BF TMP87PM70F RBS 2111 p540c 01 01
    Text: TO SHIBA TMP87CH70B/M70B CMOS 8 -Bit Microcontroller TMP87CH70BF, TMP87CM70BF The 87CH70B/M70B are the high speed and high performance 8 -bit single chip microcomputers. These MCU contain 6 -bit A/D conversion inputs and a VFT Vacuum Fluorescent Tube driver on a chip.


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    TMP87CH70B/M70B TMP87CH70BF, TMP87CM70BF 87CH70B/M70B TMP87CH70BF P-QFP80-1420-0 TMP87PM70F TMP87CM70BF TLCS-870 16-bit 87CM70 p540c JRS 67 TMP87PM70F RBS 2111 p540c 01 01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 S2506-04 S4707-01 S5077


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    0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLCS-470 Series TMP47C215/415 CMOS 4-Bit Microcontroller single chip microcomputer, integrating ROM, RAM, input/out­ put ports, timer/counters, a serial interface, and two clock generators on a chip. TMP47C215N TMP47C415N The 47C215/415 is a high speed and high performance 4-bit


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    TLCS-470 TMP47C215/415 TMP47C215N TMP47C415N 47C215/415 TLCS470 SDIP42-P-600 244//S PDF

    Untitled

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 2 Dim ensional Type No. Active Area Effective Size Activo Arca (mm) (mm2) Package O utline (P.49,50) Peak Spectral Response Sensitivity W avelength Range Ap A (nm) Ap S2506-04 2 .7 7 X 2 .7 7 a t\ 7.7 0.37 960 800 to 1100 920 320 to 1060


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    S2506-04 S6786 S6036 S6036-01 S4707-01 S2973-01 S3321 S5573 S5052 S5077 PDF