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    Abstract: S8890 APD S11519
    Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.


    Original     		PDF S11519 S8890 SE-171 KAPD1028E01 1NA101 APD S11519

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    Abstract: No abstract text available
    Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.


    Original     		PDF S11519 S8890 SE-171 KAPD1028E01