1NA101
Abstract: S8890 APD S11519
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
1NA101
APD S11519
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Untitled
Abstract: No abstract text available
Text: 赤外高感度 Si APD S11519シリーズ 近赤外高感度 MEMS構造を応用 当社は、フォトダイオードの裏面にMEMS構造を形成することによって、近赤外域で高感度を実現したSi検出器を開発しまし た。S11519シリーズは、近赤外域の感度を向上させたSi APDです。
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S11519ã
S8890ã
KAPDB0185JA
KAPDB0190JA
S11519-30
S11519-10
KAPDB0191JA
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Untitled
Abstract: No abstract text available
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
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S11830-3344MF
Abstract: No abstract text available
Text: NEWS 01 2011 Solid state PRODUCTS PAGE 11 Thumb-sized “ultra-compact spectrometer” with VIS-NIR response SOLID STATE PRODUCTS PAGE 16 New developments for the MPPC ELECTRON TUBE PRODUCTS PAGE 21 H2D2 light sources L11788 series, L11789 series SYSTEMS PRODUCTS
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L11788
L11789
C11367
DE128228814
S11830-3344MF
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Untitled
Abstract: No abstract text available
Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain
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D-82211
KAPD0001E05
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UPD16306BGF-3BA
Abstract: upd16306bgf uPd1630 UPD16306BGC-9EU
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16306B 64-BIT HIGH-VOLTAGE CMOS DRIVER The µPD16306B is a high voltage CMOS driver for flat display panels such as PDP, VFD and EL. It consists of a 64-bit bidirectional shift register, a 64-bit latch, and a high-voltage CMOS driver. The logic circuit operates on 5 V
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PD16306B
64-BIT
PD16306B
UPD16306BGF-3BA
upd16306bgf
uPd1630
UPD16306BGC-9EU
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H10769A
Abstract: H10770A H7422
Text: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS
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S11510
R9876,
R11540
photomultiD-82211
DE128228814
H10769A
H10770A
H7422
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vfd display driver nec
Abstract: PD16306B NEC VFD Display
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD16306B 64-BIT HIGH WITHSTAND VOLTAGE CMOS DRIVER DESCRIPTION The µPD16306B is a high withstand voltage CMOS driver for flat display panels such as PDP, VFD and EL. It consists of a 64-bit bi-directional shift register, a 64-bit latch and a high withstand voltage CMOS driver. The logic circuit operates
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PD16306B
64-BIT
PD16306B
vfd display driver nec
NEC VFD Display
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S12926
Abstract: S12926-05
Text: セレクションガイド 2015.1 Si APD アバランシェ・フォトダイオード 内 部 増 倍 機 能 を もった 高 速・高 感 度 の フォト ダ イ オ ード Si AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (アバランシェ・フォトダイオード)
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NEC VFD Display
Abstract: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL vfd circuit diagram uPD16306
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16306B 64-BIT HIGH-VOLTAGE CMOS DRIVER The µPD16306B is a high voltage CMOS driver for flat display panels such as PDP, VFD and EL. It consists of a 64-bit bidirectional shift register, a 64-bit latch, and a high-voltage CMOS driver. The logic circuit operates on 5 V
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PD16306B
64-BIT
PD16306B
NEC VFD Display
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
vfd circuit diagram
uPD16306
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UAA 1006
Abstract: No abstract text available
Text: 浜松ホトニクスの HOT な情報マガジン［ハマホット］ 2010 夏 vol.6 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL：053-452-2141 FAX：053-456-7889 jp.hamamatsu.com キリトリ線 2009年12月 代表取締役社長就任
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R7600U-300
Abstract: MOST150 S11518
Text: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07
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G11608
G11608-256DA
G11608-512DA
DE128228814
R7600U-300
MOST150
S11518
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D16306B
Abstract: uPD16306B uPD16306BGC-9EU c1165 d16306 PD16306B
Text: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT ¿¿P D 1 6 3 0 6 B 64-BIT HIGH-VOLTAGE CMOS DRIVER The ^¡PD16306B is a high voltage CMOS driver for flat display panels such as PDP, VFD and EL. It consists of a 64-bit bidirectional shift register, a 64-bit latch, and a high-voltage CMOS driver. The logic circuit operates on 5 V
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64-BIT
uPD16306B
IEI-1212)
11531E)
C10535E)
S11519EJ3V0DS00
D16306B
uPD16306BGC-9EU
c1165
d16306
PD16306B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT JU PD 1 6 3 0 6 B 64-BIT HIGH-VOLTAGE CMOS DRIVER The /¿PD16306B is a high voltage CMOS driver for flat display panels such as PDP, VFD and EL. It consists of a 64-bit bidirectional shift register, a 64-bit latch, and a high-voltage CMOS driver. The logic circuit operates on 5 V
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64-BIT
uPD16306B
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