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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


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    KMM581000B 581000B KMM581 KM41C1OOOBJ 20-pln 30-pin 581000B- 130ns 150ns PDF

    KMM581000BN-6

    Abstract: ic sc 4145 KM44C1000BJ KMM581000BN
    Text: SAMSUNG EL E C T R O N I C S INC b?E D • 7Tbm4E KMM581000BN DQ15ü7b 3ÖT M S I I G K DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung


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    KMM581000BN KMM581000BN-6 KMM581000BN-7 KMM581000BN-8 110ns 130ns 150ns KMM581000BN KM44C1000BJ ic sc 4145 PDF

    KMM581000BN

    Abstract: KMM581000BN-7 KM44C1000BJ KMM581000BN-6 KMM581000
    Text: KMM581000BN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000BN co n sist o f two 4M b it DRAMs KM44C1000BJ 1 M x4 in 20-pin SOJ package mount­


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    KMM581000BN KMM581000BN KM44C1000BJ 20-pin 30-pin 22juF KMM581000BN-6 KMM581000BN-7 KMM581000 PDF

    SS1000

    Abstract: KMM581000B
    Text: KMM581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    KMM581000B 581000B KMM581OOOB KM41C1OOOBJ 20-pin 30-pin 581000B- KMM581 SS1000 KMM581000B PDF

    30 pin simm

    Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
    Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM


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    KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM PDF

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


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    KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" PDF

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


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    KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ PDF

    KMM581000BN

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung


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    001S0Ã KMM581020BN KMM581020BN KMM581000BN KM44C1000BU 20-pin 30-pin 22/tF 110ns KMM581020BN-7 PDF

    KM416C256-7

    Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
    Text: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10


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    KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7----- KM41C4000ASL-8-- KM41C4000ASL-10 KM41C4001A-7 KM416C256-7 KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L PDF

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


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    KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble PDF