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    ARCOTEK KM68V1002CJ-15

    SRAM ASYNC FAST 1M 128Kx8 3.3V 3
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    DigiKey KM68V1002CJ-15 Tube 10,508
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    ARCOTEK KM681002BJ-10T

    SRAM ASYNC FAST 1M 128Kx8 5V 32-
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    DigiKey KM681002BJ-10T Reel 5,990
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    ARCOTEK KM68V1002CJ-15T

    SRAM ASYNC FAST 1M 128Kx8 3.3V 3
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    DigiKey KM68V1002CJ-15T Reel 2,000
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    Lodestone Pacific KM68-02

    .68" MAX INDUCTOR DIA-VERTICAL K
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    ITT Interconnect Solutions MIKM6-85PH003

    CIRC CBL 85POS RCPT TO WIRE 1.5'
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    DigiKey MIKM6-85PH003 Bulk 10
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    Mouser Electronics MIKM6-85PH003
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    Newark MIKM6-85PH003 Bulk 10
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    Interstate Connecting Components MIKM6-85PH003
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    Avnet Abacus MIKM6-85PH003 21 Weeks 10
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    Master Electronics MIKM6-85PH003
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    Find more KM68 price and stock on Findchips.com

    KM68 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM680K Ohmite Inductor: RF: 0.68u: 10%: 25M: 50: Powdered Iron: 1100m: Axial Original PDF
    KM681000 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM681000-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-7L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-8L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000ALGI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000AL-V Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    ...

    KM68 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pin diagram of 74112

    Abstract: ttl 74112 pin diagram of ttl 74112 3B522
    Text: KM684002A CMOS SRAM 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 * (Max.) The KM684002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The


    OCR Scan     		KM684002A KM684002A- KM684002A KM684002AJ 36-SOJ-4QO 1024x8 0D3bS24 36-SOJ-4QO pin diagram of 74112 ttl 74112 pin diagram of ttl 74112 3B522 PDF

    KM681001-25

    Abstract: KM681001-20 KM681001-35 tl2245 KM681001
    Text: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) Operating KM681001-20 : 170 mA(Max.) KM681001-25:150 mA(Max.)


    OCR Scan     		KM681001 KM681001-20 KM681001-25 KM681001 KM681001P: 32-DIP-400 32-SQJ-400 576-bit KM681001-20 KM681001-35 tl2245 PDF

    KM68V257CP15

    Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
    Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)


    OCR Scan     		KM68V257C 32Kx8 KM68V257C-15 KM68V257C-17 KM68V257C-20 KM68V257CP 28-DIP-300 KM68V257CJ 28-SOJ-300 KM68V257C KM68V257CP15 KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20 PDF

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply


    OCR Scan     		KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit 0D237Sb KM68B261A-6 KM68B261A-7 KM68B261A-8 Static Random Access Memory PDF

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 BiCMOS SRAM D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.


    OCR Scan     		KM68BV4002 512Kx8 10/12/15ns 12/15/20ns 12/15/20ns 0/12ns 36-SOJ-400 KM68BV4002 PDF

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L PDF

    TSOP 173 g

    Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
    Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L PDF

    cm 324

    Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
    Text: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)


    OCR Scan     		KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-400F KM681002A cm 324 KM681002A-12 KM681002A-15 KM681002A-20 74114 PDF

    TSOP 2-44

    Abstract: km68
    Text: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g


    OCR Scan     		V4000AL 512Kx8 100ns 180nW 144mW/MHz KM68V4000ALG/ALG-L 525mii) KM68V4000ALT/ALT-L KM68V4000ALR/ALR-L KM68V4000AL/AL-L TSOP 2-44 km68 PDF

    KM68BV4002

    Abstract: KM68BV4002J-12 KM68BV4002J-15 36-SOJ ttl 74142
    Text: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)


    OCR Scan     		KM68BV4002 KM68BV4002J-12 165mA KM68BV4002J-15 160mA KM68BV4002J-20 155mA KM68BV4002J 36-SOJ KM68BV4002 ttl 74142 PDF

    8512A

    Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges


    OCR Scan     		KM68512A 64Kx8 32-SOP, 32-TSOP 23b27 8512A A12C A15C KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND PDF

    KM68U1000B

    Abstract: KM68V1000B
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V


    OCR Scan     		KM68V1000B, KM68U1000B 128Kx8 128Kx8 KM68V1000B 32-SOP, 32-TSOP PDF

    KM681002

    Abstract: No abstract text available
    Text: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)


    OCR Scan     		KM681002 KM681002-15: 170mA KM681002 160mA 150mA KM681002J 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM684002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA (CMOS): 10 mA Operating KM684002A-12 : 200 mA(Max.) KM684002A-15: 190 mA(Max.)


    OCR Scan     		KM684002A KM684002A-12 KM684002A-15: KM684002A-20: KM684002AJ: 36-SOJ-400 KM684002A 304-bit PDF

    KM68B4002J-10

    Abstract: KM68B4002J-12 KM68B4002J-15
    Text: PRELIMINARY KM68B4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,1 2,15 ns M ax. Th e K M 68B 4002 is a 4 ,1 9 4,30 4 -b it • Low Pow er Dissipation Random Access M em ory organized as 5 2 4 ,2 8 8 words


    OCR Scan     		KM68B4002 KM68B4002J-10 KM68B4002J-12: KM68B4002J-15 KM68B4002J: 36-SOJ-4QO KM68B4002 304-bit KM68B4002J-10 KM68B4002J-12 KM68B4002J-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­


    OCR Scan     		KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO KM681002B/BLSJ 32-SOJ-300 KM681002B/BLT: PDF

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F PDF

    Untitled

    Abstract: No abstract text available
    Text: FrelrmiTrsry CMOS SRAM KM684002B, KM684002BI 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* “ Max. - Low Power Dissipation Standby (TTL) : 40» • (Max.) The KM684002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		KM684002B, KM684002BI KM684002B KM684002B- KM684002BJ 36-SOJ-400 KM684002BT 36-TSOP2-400F PDF

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)


    OCR Scan     		KM68BV4002 512Kx KM68BV4002-12 170mA KM68BV4002 KM68BV4002-15 160mA KM68BV4002J 36-SOJ-400 PDF

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
    Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L PDF

    KM68257C

    Abstract: KM68257C-12 KM68257C-15 KM68257C-20 KM68257CJ
    Text: CMOS SRAM KM68257C 32,768 WORD x 8 B it High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : K M68257C-12 : 165mA (max.) K M 68 257 C -15: 150mA (max.)


    OCR Scan     		KM68257C KM68257C-12 165mA KM68257C-15 150mA KM68257C-20 140mA KM68257CP 28-DIP-300 KM68257CJ KM68257C KM68257C-12 KM68257CJ PDF

    KM68B1002J-10

    Abstract: KM68B1002J-8 KM68B1002J-12 KM68B1002J-15
    Text: SAMSUNG ELECTRONICS INC b?E d m 7Tb4me oanb^i ^bb BiCMOS SRAM KM68B1002 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9 ,1 0 ,1 2 , 15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


    OCR Scan     		KM68B1002 KM68B1002J-8 175mA KM68B1002J-9 KM68B1002J-10: 165mA KM68B1002J-12: 155mA KM68B1002J-15 KM68B1002J-10 KM68B1002J-12 PDF

    KM68V1002A

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM68V1002A-12 : 95mA (max.)


    OCR Scan     		KM68V1002A KM68V1002A-12 KM68V1002A-15 KM68V1002A-17 KM68V1002A-20 KM681V002AJ 32-SOJ-400 KM68V1002AT 32-TSOP -400F KM68V1002A PDF

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8
    Text: SAMSUNG ELECTRONICS INC b?E D • 7*^4142 □□175^4 7 C]4 SUGK PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6 , 7, 8 ns max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		KM68B261A 7Tb4142 170mA KM68B261A 144-bit 0017t 300mil) KM68B261A-6 KM68B261A-7 KM68B261A-8 PDF