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    KM68 Price and Stock

    ARCOTEK KM68V1002CJ-15

    SRAM ASYNC FAST 1M 128Kx8 3.3V 3
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    DigiKey KM68V1002CJ-15 Tube 10,508 100
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    ARCOTEK KM681002BJ-10T

    SRAM ASYNC FAST 1M 128Kx8 5V 32-
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    DigiKey KM681002BJ-10T Reel 5,990 100
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    ARCOTEK KM68V1002CJ-15T

    SRAM ASYNC FAST 1M 128Kx8 3.3V 3
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    DigiKey KM68V1002CJ-15T Reel 2,000 1,000
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    ITT Interconnect Solutions MIKM6-85PH26

    CBL CIRC 85P MALE TO WIRE 0.67'
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    DigiKey MIKM6-85PH26 Bulk 10
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    Avnet Americas MIKM6-85PH26 Bulk 12 Weeks 10
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    Mouser Electronics MIKM6-85PH26
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    Master Electronics MIKM6-85PH26
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    ITT Interconnect Solutions MIKM6-85PH048

    CBL CIRC 85POS MALE TO WIRE 4'
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    DigiKey MIKM6-85PH048 Bulk 10
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    Master Electronics MIKM6-85PH048
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    KM68 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM680K Ohmite Inductor: RF: 0.68u: 10%: 25M: 50: Powdered Iron: 1100m: Axial Original PDF
    KM681000 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM681000-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-7L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-8L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000ALGI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000AL-V Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    ...

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    pin diagram of 74112

    Abstract: ttl 74112 pin diagram of ttl 74112 3B522
    Text: KM684002A CMOS SRAM 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 * (Max.) The KM684002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The


    OCR Scan     		PDF KM684002A KM684002A- KM684002A KM684002AJ 36-SOJ-4QO 1024x8 0D3bS24 36-SOJ-4QO pin diagram of 74112 ttl 74112 pin diagram of ttl 74112 3B522

    KM681001-25

    Abstract: KM681001-20 KM681001-35 tl2245 KM681001
    Text: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) Operating KM681001-20 : 170 mA(Max.) KM681001-25:150 mA(Max.)


    OCR Scan     		PDF KM681001 KM681001-20 KM681001-25 KM681001 KM681001P: 32-DIP-400 32-SQJ-400 576-bit KM681001-20 KM681001-35 tl2245

    KM68V257CP15

    Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
    Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)


    OCR Scan     		PDF KM68V257C 32Kx8 KM68V257C-15 KM68V257C-17 KM68V257C-20 KM68V257CP 28-DIP-300 KM68V257CJ 28-SOJ-300 KM68V257C KM68V257CP15 KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply


    OCR Scan     		PDF KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit 0D237Sb KM68B261A-6 KM68B261A-7 KM68B261A-8 Static Random Access Memory

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 BiCMOS SRAM D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.


    OCR Scan     		PDF KM68BV4002 512Kx8 10/12/15ns 12/15/20ns 12/15/20ns 0/12ns 36-SOJ-400 KM68BV4002

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    TSOP 173 g

    Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
    Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L

    cm 324

    Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
    Text: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)


    OCR Scan     		PDF KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-400F KM681002A cm 324 KM681002A-12 KM681002A-15 KM681002A-20 74114

    TSOP 2-44

    Abstract: km68
    Text: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g


    OCR Scan     		PDF V4000AL 512Kx8 100ns 180nW 144mW/MHz KM68V4000ALG/ALG-L 525mii) KM68V4000ALT/ALT-L KM68V4000ALR/ALR-L KM68V4000AL/AL-L TSOP 2-44 km68

    KM68BV4002

    Abstract: KM68BV4002J-12 KM68BV4002J-15 36-SOJ ttl 74142
    Text: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)


    OCR Scan     		PDF KM68BV4002 KM68BV4002J-12 165mA KM68BV4002J-15 160mA KM68BV4002J-20 155mA KM68BV4002J 36-SOJ KM68BV4002 ttl 74142

    8512A

    Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges


    OCR Scan     		PDF KM68512A 64Kx8 32-SOP, 32-TSOP 23b27 8512A A12C A15C KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND

    KM68U1000B

    Abstract: KM68V1000B
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 128Kx8 KM68V1000B 32-SOP, 32-TSOP

    KM681002

    Abstract: No abstract text available
    Text: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)


    OCR Scan     		PDF KM681002 KM681002-15: 170mA KM681002 160mA 150mA KM681002J 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM684002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA (CMOS): 10 mA Operating KM684002A-12 : 200 mA(Max.) KM684002A-15: 190 mA(Max.)


    OCR Scan     		PDF KM684002A KM684002A-12 KM684002A-15: KM684002A-20: KM684002AJ: 36-SOJ-400 KM684002A 304-bit

    KM68B4002J-10

    Abstract: KM68B4002J-12 KM68B4002J-15
    Text: PRELIMINARY KM68B4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,1 2,15 ns M ax. Th e K M 68B 4002 is a 4 ,1 9 4,30 4 -b it • Low Pow er Dissipation Random Access M em ory organized as 5 2 4 ,2 8 8 words


    OCR Scan     		PDF KM68B4002 KM68B4002J-10 KM68B4002J-12: KM68B4002J-15 KM68B4002J: 36-SOJ-4QO KM68B4002 304-bit KM68B4002J-10 KM68B4002J-12 KM68B4002J-15

    Untitled

    Abstract: No abstract text available
    Text: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­


    OCR Scan     		PDF KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO KM681002B/BLSJ 32-SOJ-300 KM681002B/BLT:

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    Untitled

    Abstract: No abstract text available
    Text: FrelrmiTrsry CMOS SRAM KM684002B, KM684002BI 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* “ Max. - Low Power Dissipation Standby (TTL) : 40» • (Max.) The KM684002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM684002B, KM684002BI KM684002B KM684002B- KM684002BJ 36-SOJ-400 KM684002BT 36-TSOP2-400F

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)


    OCR Scan     		PDF KM68BV4002 512Kx KM68BV4002-12 170mA KM68BV4002 KM68BV4002-15 160mA KM68BV4002J 36-SOJ-400

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
    Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		PDF KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L

    KM68257C

    Abstract: KM68257C-12 KM68257C-15 KM68257C-20 KM68257CJ
    Text: CMOS SRAM KM68257C 32,768 WORD x 8 B it High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : K M68257C-12 : 165mA (max.) K M 68 257 C -15: 150mA (max.)


    OCR Scan     		PDF KM68257C KM68257C-12 165mA KM68257C-15 150mA KM68257C-20 140mA KM68257CP 28-DIP-300 KM68257CJ KM68257C KM68257C-12 KM68257CJ

    KM68B1002J-10

    Abstract: KM68B1002J-8 KM68B1002J-12 KM68B1002J-15
    Text: SAMSUNG ELECTRONICS INC b?E d m 7Tb4me oanb^i ^bb BiCMOS SRAM KM68B1002 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9 ,1 0 ,1 2 , 15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


    OCR Scan     		PDF KM68B1002 KM68B1002J-8 175mA KM68B1002J-9 KM68B1002J-10: 165mA KM68B1002J-12: 155mA KM68B1002J-15 KM68B1002J-10 KM68B1002J-12

    KM68V1002A

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM68V1002A-12 : 95mA (max.)


    OCR Scan     		PDF KM68V1002A KM68V1002A-12 KM68V1002A-15 KM68V1002A-17 KM68V1002A-20 KM681V002AJ 32-SOJ-400 KM68V1002AT 32-TSOP -400F KM68V1002A

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8
    Text: SAMSUNG ELECTRONICS INC b?E D • 7*^4142 □□175^4 7 C]4 SUGK PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6 , 7, 8 ns max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		PDF KM68B261A 7Tb4142 170mA KM68B261A 144-bit 0017t 300mil) KM68B261A-6 KM68B261A-7 KM68B261A-8