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    Samsung Semiconductor KM6264BLG-10LT

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    Samsung Semiconductor KM6264BL7

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    KM6264B Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6264B Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF
    KM6264BL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-10 Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-10L Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-12 Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-12L Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-7 Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-7L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-7L Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BLG-10 Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF
    KM6264BLG-10L Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF
    KM6264BLG-12 Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF
    KM6264BLG-12L Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF
    KM6264BLG-7 Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF
    KM6264BLG-7L Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF
    KM6264BLGE-10 Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF

    KM6264B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM6264

    Abstract: KM6264B KM6264BLP-7 28-SOP 8KX8-Bit CMOS SRAM km6264blg-10 KM6264BLG-10L CC02V
    Text: CMOS SRAM KM6264B Family 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : CMOS • Organization : 8K x 8 • Power Supply Voltage : Single 5V ± 10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    Original     		PDF KM6264B 28-DIP, 28-SOP KM6264BL 600mil) KM6264 KM6264BLP-7 28-SOP 8KX8-Bit CMOS SRAM km6264blg-10 KM6264BLG-10L CC02V

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


    Original     		PDF AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257

    6264B

    Abstract: 6264BL-7L cs1g 6264bl KM6264BL
    Text: KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70,100,120 ns m ax. • Low P o w er D issipation S tandb y (C M O S): 10;-W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 5 5 m W /M H z (max.)


    OCR Scan     		PDF KM6264BL/KM6264BL-L 6264B 28-pin KM6264BL /KM6264BL-L 6264BL-7L cs1g 6264bl

    Untitled

    Abstract: No abstract text available
    Text: KM6264B Family CMOS SRAM 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6264B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges


    OCR Scan     		PDF KM6264B 28-DIP, 28-SOP

    Untitled

    Abstract: No abstract text available
    Text: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,100, 120 ns Max. • Low Power Dissipation Standby (CMOS): 10nW(Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6264BL KM6264BLP/BLP-L 28-pin DIP-600B KM6264BLG/BLG-L OP-45Q KM6264BL/BL-L 536-bit 7Tfci4142

    KM6264BL-10L

    Abstract: 6264bl km6264 6264 SRAM
    Text: KM6264BÜKM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :10,«W (typ) LVersion : W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		PDF KM6264BÃ KM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L KM6264BLVBL-L KM6264BL-10L 6264bl km6264 6264 SRAM

    Untitled

    Abstract: No abstract text available
    Text: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 70,100,120 ns m ax. • Low P ow er D issipation Standb y (CM OS): 10MW (typ.) L-Version T h e K M 6 2 6 4 B /B L /B L -L is a 6 5,5 36 -b it h ig h -s p e e d S ta tic


    OCR Scan     		PDF KM6264B/KM6264BL/KM6264BL-L 28-pin 6264B KM6264B/KM6264BL /KM6264BL-L

    Untitled

    Abstract: No abstract text available
    Text: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 55mW/MHz (max.) • Single 5V ± 10% Power Supply


    OCR Scan     		PDF KM6264B/KM6264BL/KM6264BL-L 55mW/MHz KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bit

    KM6264BL-10

    Abstract: KM6264BL-10L KM6264BL-12 DIP-600B KM6264BL-7L 3A11 KM6264BL7L KM6264 52HA KM6264BL10
    Text: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,1 0 0 , 120 ns Max. • Low Power Dissipation Standby (CMOS): 10|iW (Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) •Single 5V±10% Power Supply


    OCR Scan     		PDF KM6264BL KM6264BLP/BLP-L 28-pin DIP-600B KM6264BLG/BLG-L OP-45Q KM6264BL/BL-L 536-bit 00217S4 KM6264BL-10 KM6264BL-10L KM6264BL-12 KM6264BL-7L 3A11 KM6264BL7L KM6264 52HA KM6264BL10

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b7E » • T'ìbMlMS KM6264BL/KM6264BL-L GD17472 mg CMOS SRAM 8 K x8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5(iW (typ.) LL-Version


    OCR Scan     		PDF KM6264BL/KM6264BL-L GD17472 KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bitDUAL

    km6264

    Abstract: KM6264BL-10L KM6264BL10L 6264bl KM6264BLS SRAM 6264 m6264 KM6264BL-10
    Text: KM6264BUKM6264BL-L CMOS SRAM 8 K x 8 Bit Static R A M GENERAL DESCRIPTION FEATURES • Fast Access Time : 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) : 10« W (typ) L.Version : 5// W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		PDF KM6264BUKM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L OP-450 km6264 KM6264BL-10L KM6264BL10L 6264bl KM6264BLS SRAM 6264 m6264 KM6264BL-10

    KM6264BL-10L

    Abstract: KM6264BL-10 KM6264BL-7 KM6264BL7L KM6264BL7 KM6264BL-7L
    Text: CMOS SRAM KM6264BL/KM6264BL-L 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10nW (typ.) L-Version 5(iW (typ.) LL-Version Operating: 55mW /MHz (max.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		PDF KM6264BL/KM6264BL-L KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bit KM6264BL-10L KM6264BL-10 KM6264BL-7 KM6264BL7L KM6264BL7 KM6264BL-7L

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


    OCR Scan     		PDF KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    KM6264BL-10

    Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent


    OCR Scan     		PDF KMM591000C-6 KMM591000C-7 KMM591000C-8 KMM536256C/CG-7 KMM536256C/CG-8 New80 KM75C03AP-50 KM75C03AN-12 KM75C03AN-15 KM75C03AN-20 KM6264BL-10 samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    AD1845

    Abstract: No abstract text available
    Text: KS0161 M u l ti m e d i a ELECTRONICS OVERVIEW The KS0161 multimedia audio chip represents the state - o f - the - art in multimedia audio technology. KS0161 combines a high - quality 32 - voice wavetable synthesizer, a powerful 16 - bit MPU, SoundBlaster1 and MPU401 compatibility, and full AD 1848 support into a single chip. The audio


    OCR Scan     		PDF KS0161 KS0161 MPU401 160-OFP-2828-AN2 208-QFP-2828-AN1 70MAX AD1845

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL