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    Samsung Semiconductor KM48S8030CT-G10

    SDRAM, 8M x 8, 54 Pin, Plastic, TSOP
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    KM48S8030C Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM48S8030C Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S8030CT-G/F10 Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S8030CT-G/F7 Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S8030CT-G/F8 Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S8030CT-G/FA Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S8030CT-G/FH Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S8030CT-G/FL Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S8030CT-GL Samsung Electronics KM48S8030CT 2M x 8-Bit x 4 Banks Synchronous DRAM Organization = 8Mx8 Bank/ Interface = 4B/LVTTL Refresh = 4K/64ms Speed = 75,80,1H,1L,10 Package = 54TSOP2 Power = C,l Production Status = Eol Comments = - Original PDF

    KM48S8030C Datasheets Context Search

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    KM48S8030C

    Abstract: No abstract text available
    Text: KM48S8030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		PDF KM48S8030C KM48S8030C 10/AP

    KM48S8030C

    Abstract: KM48S803 PC133 1998
    Text: KM48S8030C Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Oct., 1998 • PC133 first published. REV. 0 Oct. '98 Preliminary PC133 CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030C is 67,108,864 bits synchronous high data


    Original     		PDF KM48S8030C PC133 KM48S8030C A10/AP KM48S803 PC133 1998

    Untitled

    Abstract: No abstract text available
    Text: KMM374S823CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 24, 1999 - Changed "Detail C" in PCB Dimension. - Changed decoupling capacitance from two 0.1uF to one 0.1uF and one 0.33 uF. Rev.0.1 Mar 1999 KMM374S823CTS PC100 Unbuffered DIMM KMM374S823CTS SDRAM DIMM


    Original     		PDF KMM374S823CTS PC100 KMM374S823CTS 8Mx72 400mil 168-pin

    KMM466S823CT2-F0

    Abstract: No abstract text available
    Text: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. REV. 2 August 1998 Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM


    Original     		PDF KMM466S823CT2 144pin KMM466S823CT2 8Mx64 400mil 144-pin KMM466S823CT2-F0

    KMM377S823CT2-GH

    Abstract: KMM377S823CT2-GL
    Text: Preliminary KMM377S823CT2 SDRAM MODULE KMM377S823CT2 SDRAM DIMM Intel 1.1 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823CT2 is a 8M bit x 72 Synchronous


    Original     		PDF KMM377S823CT2 KMM377S823CT2 8Mx72 400mil 18-bits 24-pin 168pin 0022uF KMM377S823CT2-GH KMM377S823CT2-GL

    KMM374S1623CT-GH

    Abstract: No abstract text available
    Text: KMM374S1623CT PC100 Unbuffered DIMM Revision History [ Rev. 1 ] March 23. 1999 Functional Block Diagram and Package dimension changed. Rev.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM374S1623CT PC100 KMM374S1623CT 16Mx72 400mil 168-pin KMM374S1623CT-GH

    KMM377S823CT3-GH

    Abstract: KMM377S823CT3-GL
    Text: SDRAM MODULE KMM377S823CT3 KMM377S823CT3 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823CT3 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM377S823CT3 KMM377S823CT3 8Mx72 400mil 18-bits 24-pin 168pin 0022uF KMM377S823CT3-GH KMM377S823CT3-GL

    Untitled

    Abstract: No abstract text available
    Text: KMM377S823CT3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 PC100 Registered DIMM KMM377S823CT3 KMM377S823CT3 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM377S823CT3 PC100 KMM377S823CT3 8Mx72 400mil 18-bits

    KMM374S1623CT-GL

    Abstract: No abstract text available
    Text: KMM374S1623CT PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 23, 1999 - Changed "Detail C" in PCB Dimension. Rev.0.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM374S1623CT PC100 KMM374S1623CT 16Mx72 400mil 168-pin KMM374S1623CT-GL

    connector SAMSUNG tab 2 30 PIN

    Abstract: KM48S8030CT-GL 30 pin connector samsung tab connector SAMSUNG TAB 30 PIN A12181 KMM379S823CT-GL
    Text: Only for SGI SDRAM MODULE KMM379S823CT KMM379S823CT, Burst Mode 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM379S823CT is a 8M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM379S823CT KMM379S823CT, 8Mx72 KMM379S823CT KMM379S823CT-GL 400mil 100MHz 52-pin 100Min connector SAMSUNG tab 2 30 PIN KM48S8030CT-GL 30 pin connector samsung tab connector SAMSUNG TAB 30 PIN A12181 KMM379S823CT-GL

    KMM366S823CTS-GL

    Abstract: No abstract text available
    Text: KMM366S823CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 24, 1999 - Changed "Detail C" in PCB Dimension. - Changed decoupling capacitance from two 0.1uF to one 0.1uF and one 0.33 uF. Rev.0.1 Mar 1999 KMM366S823CTS PC100 Unbuffered DIMM KMM366S823CTS SDRAM DIMM


    Original     		PDF KMM366S823CTS PC100 KMM366S823CTS 8Mx64 400mil 168-pin KMM366S823CTS-GL

    KMM374S823CTF-G0

    Abstract: No abstract text available
    Text: PC66 SDRAM MODULE KMM374S823CTF KMM374S823CTF SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTF is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM374S823CTF KMM374S823CTF 8Mx72 400mil 168-pin KM48S8030CT KMM374S823CTF-G0

    KMM466S823CT3-F0

    Abstract: No abstract text available
    Text: KMM466S823CT3 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. REV. 2 August 1998 Preliminary 144pin SDRAM SODIMM KMM466S823CT3 KMM466S823CT3 SDRAM SODIMM


    Original     		PDF KMM466S823CT3 144pin KMM466S823CT3 8Mx64 400mil 144-pin KMM466S823CT3-F0

    KMM366S823CTF-G0

    Abstract: KMM366S823CTF
    Text: PC66 SDRAM MODULE KMM366S823CTF KMM366S823CTF SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823CTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM366S823CTF KMM366S823CTF 8Mx64 400mil 168-pin KM48S8030CT KMM366S823CTF-G0

    nk401

    Abstract: AM29V800 S3C3410 S3C3410X JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SMDK40100 SVC32
    Text: 40-S3-C3410X-062001 APPLICATION NOTE S3C3410X 16-Bit CMOS Microcontrollers Revision 0 S3C3410X RISC MICROPROCESSOR 1 ABOUT SMDK40100 BOARD ABOUT SMDK40100 BOARD SYSTEM OVERVIEW SMDK40100 Samsung MCU Development Kit for S3C3410X is a platform that is suitable for code development


    Original     		PDF 40-S3-C3410X-062001 S3C3410X 16-Bit S3C3410X SMDK40100 SMDK40100 16/32-bit nk401 AM29V800 S3C3410 JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SVC32

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SDRAM R evision H istory R evision 1 M ay 1998 - ICC2 N va lu e (10m A) is cha ng ed to 12m A. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 ELECTRONICS Preliminary


    OCR Scan     		PDF KM48S8030C_ KM48S8030C KM48S8030C 10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM48S8030C KM48S8030C 10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM


    OCR Scan     		PDF KMM466S823CT3_ 144pin KMM466S823CT3 8Mx64 400mil 144-and

    Untitled

    Abstract: No abstract text available
    Text: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM


    OCR Scan     		PDF KMM466S823CT2 144pin KMM466S823CT2 8Mx64 400mil 144-pin

    M374S823CT

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KM M374S823CTS KMM374S823CTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M374S823CTS KMM374S823CTS PC100 8Mx72 400mil 168-pin M374S823CT

    Untitled

    Abstract: No abstract text available
    Text: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTRCMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM


    OCR Scan     		PDF KMM466S823CT2 144pin KMM466S823CT2 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTRCMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM


    OCR Scan     		PDF KMM466S823CT3_ 144pin KMM466S823CT3 400mil 144-pin KMM466S823CT3

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KM M374S823CTS KMM374S823CTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTS is a 8M bit x 72 Synchronous • Performance range


    OCR Scan     		PDF PC100 M374S823CTS KMM374S823CTS 8Mx72 M374S823CTS KMM374S823CTS-G8 125MHz 400mil KMM374S823CTS-GI-