KM44V4100BS
Abstract: Oi24 A10QZ
Text: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44V4100BS
16Mx4,
512Kx8)
b414E
7Tb4142
KM44V4100BS
Oi24
A10QZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM44C4000B, KM44C4100B KM44V4000B, KM44V4100B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44C4000B,
KM44C4100B
KM44V4000B,
KM44V4100B
0D232bc
|
PDF
|
KM44C4100B
Abstract: KM44V4000B
Text: KM44C4000B, KM44C4100B KM44V4000B, KM44V4100B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44C4000B,
KM44C4100B
KM44V4000B,
KM44V4100B
KM44V4000B
|
PDF
|
44V4100
Abstract: No abstract text available
Text: KM44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44V4100BK
16Mx4,
512Kx8)
7TL414E
44V4100
|
PDF
|
KM44C4000B
Abstract: No abstract text available
Text: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44C4000B
KM44C4000BS
|
PDF
|
KM44C4100BK
Abstract: No abstract text available
Text: KM4 4 C 4 1 OOB K CMOS D R AM ELECTRONICS 4 M X 4 Bit C M O S Dynamic H A M with Fast Page M ode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
16Mx4,
512Kx8)
KM44C4100BK
KM44C4100BK
|
PDF
|
Oi24
Abstract: No abstract text available
Text: KM44V4000BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44V4000BK
16Mx4,
512Kx8)
Oi24
|
PDF
|
sf 128 d l5
Abstract: No abstract text available
Text: KMM332V400BS-L KMM332V41OBS-L DRAM MODULE KMM332V400BS-L & KMM332V410BS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0BS is a 4Mx32bits Dynamic Part Identification
|
OCR Scan
|
KMM332V400BS-L
KMM332V41OBS-L
KMM332V400BS-L
KMM332V410BS-L
KMM332V40
4Mx32bits
24-pin
72-pin
sf 128 d l5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM372V400BK/BS KMM372V41OBK/BS DRAM MODULE KMM372V4Q0BK/BS / KMM372V41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 D ynam ic RAM high density m em ory module. The
|
OCR Scan
|
KMM372V400BK/BS
KMM372V41OBK/BS
KMM372V4Q0BK/BS
KMM372V41
4Mx72
KMM372V40
48pin
168-pin
KMM372V400BK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM44V4000BS CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44V4000BS
16Mx4,
512Kx8)
V4000B
|
PDF
|
1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
|
OCR Scan
|
KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
|
PDF
|
KM44C4100BS
Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Text: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44C4100BS
34STB
KM44C4100BS
BC3 csr
data sheet tsop 138
TSOP 173 g
KM44C4100B
N300N
3bm42
512Kx8 bit
|
PDF
|
1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
|
OCR Scan
|
KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
|
PDF
|
km416c254
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE P o w er D ensity' 4M B/W 256KX16 5V±10% KM416C256B# 50/60/70 Fast Page KM416C256BL# J:40 Pin SOJ T:40 Pin TSOP-ll Forward KM416C254S# EDO KM416C254BL# 3.3V±0.3V KM416V256B# 60/70/80 Fast Page KM416V25SBL# KM416V254B# EDO KM416V254BL#
|
OCR Scan
|
KM416C256B#
KM416C256BL#
KM416C254S#
KM416C254BL#
KM416V256B#
KM416V25SBL#
KM416V254B#
KM416V254BL#
256KX16
16Mx1
km416c254
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: KMM37 2 V 4 0 0 B K D R A M Mo d u l e ELECTRO NICS KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
|
OCR Scan
|
KMM37
KMM372V400BK/BS
KMM372V41OBK/BS
4Mx72
KMM372V40
KMM372V400BK
cycles/64ms
300mil
KMM372V41OBK
|
PDF
|
cd-rom circuit diagram
Abstract: km44c4000bk KM44C4100B
Text: KM44C4000BK ELECTRONICS CMOS D R A M 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Pag 9 Mods offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44C4000BK
b4142
cd-rom circuit diagram
km44c4000bk
KM44C4100B
|
PDF
|
KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
|
OCR Scan
|
KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
|
PDF
|
km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
|
OCR Scan
|
KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
|
PDF
|
KM44C4100BK
Abstract: cd-rom circuit diagram D0345 KM44C4100B
Text: KM44C4100BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44C4100BK
512Kx8)
003457b
KM44C4100BK
cd-rom circuit diagram
D0345
KM44C4100B
|
PDF
|
KM44C4000BS
Abstract: KM44C4000BS 6 KM44C4000B
Text: KM44C4000BS ELECTRONICS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44C4000B
consumpt47
KM44C4000BS
7Sb4145
003442b
KM44C4000BS
KM44C4000BS 6
|
PDF
|
KM44V4000BS
Abstract: kmm372v400bs DU70
Text: KMM372V400BK/BS KMM372V41 OB K/BS DRAM MODULE KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
|
OCR Scan
|
KMM372V400BK/BS
KMM372V41
KMM372V400BK/BS
KMM372V41OBK/BS
4Mx72
KMM372V40
300mil
48pin
168-pin
KM44V4000BS
kmm372v400bs
DU70
|
PDF
|
KM44C4100BS
Abstract: No abstract text available
Text: KM44C4100BS CMOS D R A M ^ ^ ^ ^ ^ ^ E L E C T R O N IC S 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
|
OCR Scan
|
KM44C4100BS
16Mx4,
512Kx8)
71b4142
KM44C4100BS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM332V400BS-L KMM332V41OBS-L DRAM MODULE KMM332V400BS-L & KMM332V41 OBS-L Fast Page Mode 4Mx32 DRAM DIMM, Low Power with Self Ref, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0BS is a 4M bit x 32 D ynam ic RAM high density m em ory module. The
|
OCR Scan
|
KMM332V400BS-L
KMM332V41OBS-L
KMM332V41
4Mx32
KMM332V40
24-pin
72-pin
KMM332V400BS-L6/L7
cycles/128ms
|
PDF
|