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    Untitled

    Abstract: No abstract text available
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		KM44C1004C, KM44V1004C 7TbM14E PDF

    EMA18

    Abstract: No abstract text available
    Text: % P ro tfn ? V rr-T y KM644002B, KM644002BI C M O SSR A M 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 10,12,15* • (Max.) - Low Power Dissipation Standby (TTL) : 40« • (Max.) The KM644002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		KM644002B, KM644002BI KM644002B KM644002B- KM6440028- KM644002BJ 32-SOJ-400 KM644002BT 32-TSOP2-4QOF EMA18 PDF

    AF6 din 74

    Abstract: No abstract text available
    Text: CMOS DRAM KM416V1OOOA/A-L/A-F 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC K M 416 V 1000 A -6/A -L 6/A -F 6 60ns 15ns 110ns K M 416 V 1000 A -7/A -L 7/A -F 7 70ns 20ns 130ns K M 416 V 1000 A -8/A -L 8/A -F 8


    OCR Scan     		KM416V1OOOA/A-L/A-F 110ns 130ns 150ns cycle/64ms cycle/128ms 42-LEAD 44-LEAD AF6 din 74 PDF