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    KM416V4104C Search Results

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    KM416V4104C Price and Stock

    Samsung Semiconductor KM416V4104CS-L5

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    Bristol Electronics KM416V4104CS-L5 14
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    Samsung Semiconductor KM416V4104CS-5

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    Quest Components KM416V4104CS-5 33
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    Samsung Semiconductor KM416V4104CS-6

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    Quest Components KM416V4104CS-6 9
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    KM416V4104CS-6 1
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    KM416V4104C Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM416V4104C Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104CS Samsung Electronics KMM366F804CS1 8Mx64 DRAM Dimm Using 4Mx16,8K&4K Refresh,3.3V, Density(MB) = 64, Organization = 8Mx64, Mode = Edo, Refresh = 4K/64ms, Speed(ns) = 50,60, #of Pin = 168, Component Composition = (4Mx16)*8+EEPROM, Production Status = Eol, Comments = Unbuffered Original PDF
    KM416V4104CS-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104CS-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104CS-50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Original PDF
    KM416V4104CS-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104CS-60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns Original PDF
    KM416V4104CS-L45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF
    KM416V4104CS-L-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104CS-L-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104CS-L50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF
    KM416V4104CS-L-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104CS-L60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF

    KM416V4104C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		PDF KM416V4004C KM416V4104C 16bit 4Mx16 400mil

    KM416V4004C

    Abstract: KM416V4104C
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		PDF KM416V4004C KM416V4104C 16bit 4Mx16 400mil KM416V4104C

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F404CS KMM372F404CS 4Mx16 KMM372F404C 4Mx72bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits


    Original     		PDF KMM374F804CS1 KMM374F804CS1 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits


    Original     		PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin

    4CS1

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F80 8 4CS1 KMM366F80(8)4CS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4CS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4CS1 consists of eight CMOS 4Mx16bits


    Original     		PDF KMM366F80 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin 4CS1

    KM416V

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F404CS1 Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1998 DRAM MODULE Revision History Version 0.0 (Dec. 1998) • The 4th. generation of 64Mb DRAM components are applied to this module. KMM374F404CS1 DRAM MODULE KMM374F404CS1


    Original     		PDF KMM374F404CS1 4Mx72 4Mx16 KMM374F404CS1 4Mx72bits KM416V

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804CS1-L KMM466F804CS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804CS1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF KMM466F804CS1-L KMM466F804CS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil

    KMM372F804CS

    Abstract: No abstract text available
    Text: KMM372F804CS DRAM MODULE KMM372F804CS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F804CS KMM372F804CS 4Mx16 KMM372F804C 8Mx72bits 4Mx16bits 400mil 168-pin

    KMM466F404CS2-L

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404CS2-L KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF KMM466F404CS2-L KMM466F404CS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    K and M Electronics

    Abstract: No abstract text available
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		PDF KM416V4004C KM416V4104C 16bit 4Mx16 400mil K and M Electronics

    Untitled

    Abstract: No abstract text available
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CM OS DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access tim e (-45, -5 or -6), power consum ption(N orm al


    OCR Scan     		PDF KM416V4004C KM416V4104C 16bit