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    KM416V4004C Search Results

    KM416V4004C Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM416V4004C Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4004CS-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4004CS-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4004CS-50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Original PDF
    KM416V4004CS-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4004CS-60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns Original PDF
    KM416V4004CS-L45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF
    KM416V4004CS-L-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4004CS-L-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4004CS-L50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF
    KM416V4004CS-L-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4004CS-L60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		PDF KM416V4004C KM416V4104C 16bit 4Mx16 400mil

    KM416V4004C

    Abstract: KM416V4104C
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		PDF KM416V4004C KM416V4104C 16bit 4Mx16 400mil KM416V4104C

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits


    Original     		PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin

    4CS1

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F80 8 4CS1 KMM366F80(8)4CS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4CS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4CS1 consists of eight CMOS 4Mx16bits


    Original     		PDF KMM366F80 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin 4CS1

    K and M Electronics

    Abstract: No abstract text available
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		PDF KM416V4004C KM416V4104C 16bit 4Mx16 400mil K and M Electronics

    Untitled

    Abstract: No abstract text available
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CM OS DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access tim e (-45, -5 or -6), power consum ption(N orm al


    OCR Scan     		PDF KM416V4004C KM416V4104C 16bit