Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM416V254D Search Results

    SF Impression Pixel

    KM416V254D Price and Stock

    Samsung Semiconductor KM416V254DT-16

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416V254DT-16 44
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor KM416V254DT-6

    Dynamic RAM, EDO, 256K x 16, 44 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416V254DT-6 420
    • 1 $4.5
    • 10 $4.5
    • 100 $1.95
    • 1000 $1.8
    • 10000 $1.8
    		Buy Now
    KM416V254DT-6 224
    • 1 $4.5
    • 10 $4.5
    • 100 $2.775
    • 1000 $2.775
    • 10000 $2.775
    		Buy Now
    KM416V254DT-6 37
    • 1 $4.5
    • 10 $3.3
    • 100 $3
    • 1000 $3
    • 10000 $3
    		Buy Now

    KM416V254D Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V254D Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJL-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Original PDF
    KM416V254DJ-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJL-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Original PDF
    KM416V254DJL-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Original PDF
    KM416V254DT-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DT-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DT-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Original PDF
    KM416V254DT-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DTL-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Original PDF
    KM416V254DT-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DTL-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Original PDF
    KM416V254DTL-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Original PDF

    KM416V254D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C254D

    Abstract: KM416C254D KM416V254D km416v254 KM416C254
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    Original     		PDF KM416C254D, KM416V254D 16Bit 256Kx16 higV254D 400mil C254D KM416C254D KM416V254D km416v254 KM416C254

    Untitled

    Abstract: No abstract text available
    Text: KM416V254DT-L6T 1/2 IL08 4 M (256 K x 16)-BIT DRAM WITH EXTENDED DATA OUT —TOP VIEW— VCC 1 40 GND DQ0 I/O 2 39 DQ15 I/O DQ1 I/O 3 38 DQ14 I/O DQ2 I/O 4 37 DQ13 I/O DQ3 I/O 5 36 DQ12 I/O VCC 6 35 GND DQ4 I/O 7 34 DQ11 I/O DQ5 I/O 8 33 DQ10 I/O DQ6 I/O 9


    Original     		PDF KM416V254DT-L6T

    C254D

    Abstract: KM416C254D
    Text: KM416C254D/DL, KM416V254D/DL CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    Original     		PDF KM416C254D/DL, KM416V254D/DL 16Bit 256Kx16 400mil C254D KM416C254D

    am29f010b-70ef

    Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
    Text: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 am29f010b-70ef A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16

    rbbb

    Abstract: No abstract text available
    Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416V254DJ 256Kx16 DQ0-DQ15 rbbb

    e5as

    Abstract: No abstract text available
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or + 3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    OCR Scan     		PDF KM416C254D, KM416V254D 16Bit 256Kx16 e5as

    Untitled

    Abstract: No abstract text available
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    OCR Scan     		PDF KM416C254D, KM416V254D 16Bit 256Kx16

    RA5E

    Abstract: 100 CJB equivalent D0232
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254D, KM416V254D 256Kx16 RA5E 100 CJB equivalent D0232

    C254D

    Abstract: cmos dram NCC KMQ
    Text: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF V254DJ 256Kx16 OT7T2733T KM416V254DJ 003242b C254D cmos dram NCC KMQ

    C254D

    Abstract: KM416C
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V .


    OCR Scan     		PDF KM416C254D, KM416V254D 256Kx16 DQODQ15 C254D KM416C

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and


    OCR Scan     		PDF KM416C256D, KM416V256D 16Bit 256Kx16 0G372DS

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004

    3DQ10

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or to w power) and


    OCR Scan     		PDF KM416C256D, KM416V256D 16Bit 256KX16 3DQ10

    ee1625

    Abstract: C254D 3D47T
    Text: KM416C254DT ELECTRONICS CMOS DRAM 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254DT 256Kx 256Kx16 003040b ee1625 C254D 3D47T

    Untitled

    Abstract: No abstract text available
    Text: KM4 1 6 V 2 5 4 D T CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF 256Kx16 KM416V254DT 324Sb

    Untitled

    Abstract: No abstract text available
    Text: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF 256Kx16 KM416C254DT 00304flb

    Untitled

    Abstract: No abstract text available
    Text: K M 4 16 C 2 5 4 D J CMOS D R A M ELECTRONICS 2 5 6 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF 256Kx16 ba54DJ QQ304SS 40SOJ KM416C254DJ

    KM416C254DJ-7

    Abstract: C254D VL 7143
    Text: KM4 1 6 C 2 5 4 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF 6C254D 256Kx 256Kx16 T7JSDT27W nraEEES55BM5 KM416C254DJ 003045b KM416C254DJ-7 C254D VL 7143