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    KEC KHB6D0N40PUPMC

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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    KHB6D0N40P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KHB6D0N40P Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF
    KHB6D0N40P Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

    KHB6D0N40P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6D0N40P

    Abstract: KHB6D0N40P
    Text: SEMICONDUCTOR KHB6D0N40P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking KHB 1 6D0N40P 501 2 No. Item Marking Description KHB KHB 6D0N40P 6D0N40P Revision - - Lot No. 501 Device Name 2006. 2. 6 3 Revision No : 2 5 Year 0~9 : 2000~2009


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    PDF KHB6D0N40P O-220AB 6D0N40P 6D0N40P KHB6D0N40P

    D 92 M - 02 DIODE

    Abstract: KHB6D0N40F KHB6D0N40F2 KHB6D0N40P
    Text: SEMICONDUCTOR KHB6D0N40P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB6D0N40P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB6D0N40P/F/F2 KHB6D0N40P Fig15. Fig16. Fig17. D 92 M - 02 DIODE KHB6D0N40F KHB6D0N40F2 KHB6D0N40P

    KHB6D0N40F

    Abstract: KHB6D0N40P
    Text: SEMICONDUCTOR KHB6D0N40P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB6D0N40P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB6D0N40P/F KHB6D0N40P KHB6D0N40F KHB6D0N40P

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB6D0N40P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB6D0N40P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB6D0N40P/F/F2 KHB6D0N40P dI/dt100A/,

    D 92 M - 02 DIODE

    Abstract: KHB6D0N40F KHB6D0N40P
    Text: SEMICONDUCTOR KHB6D0N40P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB6D0N40P/F D 92 M - 02 DIODE KHB6D0N40F KHB6D0N40P

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    KF5N50

    Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
    Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41


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    PDF OT-23 FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005 O-126 KF5N50 kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S DF06 IC kf13n50

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original
    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j