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    KF 35 TRANSISTOR Search Results

    KF 35 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KF 35 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SU SERIES CAPACITOR ALUMINIUM

    Abstract: No abstract text available
    Text: Aluminum Electrolytic Capacitor/KF Radial lead type Series: KF • Features Type : A Discontinued Endurance :105°C 1000 h Low impedance 1/3 to 1/4 of series KG 7mm high ■ Specification Operating Temp. Range Rated W.V. Range -55 to + 105°C 6.3 to 35 V .DC


    Original     		PDF 120Hz/ 120Hz 120Hz) RCR-2367 SU SERIES CAPACITOR ALUMINIUM

    Untitled

    Abstract: No abstract text available
    Text: Aluminum Electrolytic Capacitor/KF Radial lead type Series: KF • Features Type : A Discontinued Endurance :105°C 1000 h Low impedance 1/3 to 1/4 of series KG 7mm high ■ Specification Operating Temp. Range Rated W.V. Range -55 to + 105°C 6.3 to 35 V .DC


    Original     		PDF 120Hz/ 120Hz 120Hz) RCR-2367

    kf 202 transistor

    Abstract: Chirp spice gummel SR770 spectra physics
    Text: Measurement of ‘1/f’ Noise in Narrow Poly-silicon Emitter Bipolar Transistor Structures. S.D. Connor Bipolar Characterization Group, Central R&D, GEC Plessey Semiconductors, Tweedale Way, Oldham, Lancs OL9 7LA, England. Abstract:- We present here our initial findings on low frequency


    Original     		PDF

    855E

    Abstract: UPA862TD AN1026 NE685 S21E UPA862TD-T3 BF109 mje 13006 bf 9673
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)


    Original     		PDF UPA862TD NE851 NE685 855E AN1026 S21E UPA862TD-T3 BF109 mje 13006 bf 9673

    KF 517

    Abstract: AN1026 NE685 S21E UPA862TD UPA862TD-T3-A
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)


    Original     		PDF UPA862TD NE851 NE685 KF 517 AN1026 S21E UPA862TD-T3-A

    nec 16312 transistor

    Abstract: cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor NE851M03 16312 transistor SiS 671 transistor KF 507
    Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS


    Original     		PDF NE851M03 NE851M03 2e-15 AN1026. nec 16312 transistor cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor 16312 transistor SiS 671 transistor KF 507

    transistor c 6073

    Abstract: 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026 NE894M03
    Text: NEC's NPN SILICON TRANSISTOR NE894M03 FEATURES • OUTLINE DIMENSIONS Units in mm MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR > 3 GHz OSCILLATORS


    Original     		PDF NE894M03 NE894M03 AN1026. 83e-15 transistor c 6073 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026

    8313 transistor to-3

    Abstract: board ccb2 kf 982 855E transistor Bf 981
    Text: SILICON TRANSISTOR UPA895TD NPN SILICON RF TWIN TRANSISTOR FEATURES LOW VOLTAGE, LOW CURRENT OPERATION Units in mm Package Outline TD (TOP VIEW) SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 IDEAL FOR 1-3 GHz OSCILLATORS 1 2 0.4 0.8 3 The UPA895TD contains two NE851 high frequency silicon


    Original     		PDF UPA895TD NE851 UPA895TD NE851 AN1026. 8313 transistor to-3 board ccb2 kf 982 855E transistor Bf 981

    nec 16312 transistor

    Abstract: Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507
    Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR ≤ 3 GHz OSCILLATORS


    Original     		PDF NE851M03 NE851M03 nec 16312 transistor Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507

    transistor Bf 966

    Abstract: kf 982 AN1026 S21E UPA895TD UPA895TD-T3 2412 NEC
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: Units in mm Package Outline TD (TOP VIEW) 1.2 mm x 0.8 mm • UPA895TD 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: C1 6 B1


    Original     		PDF UPA895TD UPA895TD NE851 transistor Bf 966 kf 982 AN1026 S21E UPA895TD-T3 2412 NEC

    kp 1006

    Abstract: AN1026 S21E UPA895TD UPA895TD-T3-A
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 NEC's UPA895TD contains two NE851 high frequency silicon bipolar chips. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. NEC's


    Original     		PDF UPA895TD NE851 kp 1006 AN1026 S21E UPA895TD-T3-A

    HBFP0420TR1

    Abstract: transistor KF 517
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0420 is a high performance isolated collector


    Original     		PDF HBFP-0420 OT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-1684E 5968-5433E HBFP0420TR1 transistor KF 517

    7400N

    Abstract: CPH3249A 9500M
    Text: CPH3249A SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 135.0f NF 1 IKF 195.0m NE 2 NR 1 IKR 75.00m NC 1.9 IRB 200.0m RE 73.00m XTB 2 XTI 3 VJE 680.0m TF 7n VTF 1.000K PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A


    Original     		PDF CPH3249A 7400N CPH3249A 9500M

    2SC4519

    Abstract: No abstract text available
    Text: 2SC4519 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 70.00f NF 1 IKF 900.0m NE 2 NR 1 700.0m IKR NC 2 IRB 400.0u RE 175.0m XTB 2 XTI 3 VJE 680.0m TF 300p VTF 5 PTF VJC 550.0m XCJC 1 FC 50p AF 1 Temp = Date : Unit A A A A Ohm


    Original     		PDF 2SC4519 2SC4519

    TVR06

    Abstract: n50t
    Text: FZ 400 R 06 KF 2 Therm ische Eigenschaften Therm al properties Ftthjc DC, pro B a u ste in /p e rm o d u le 0,089 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcE S 600


    OCR Scan     		PDF

    2n3904 2n3906

    Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
    Text: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0


    OCR Scan     		PDF 2N2222A 2N2484 2N2907A 2N3251A 2N3904 2N3906 2N4401 2N4403 BC847C BCY71 2n3904 2n3906 bcy71 ALTERNATIVE 2N3904 geometry THC3251A

    ff-130

    Abstract: diode SS 3
    Text: FF 100 R 06 KF 2 Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V lc 100 A IcRM </ E 200 A O 10 Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u s te in /p e rmodule 0,155 DC, pro Zweig / per arm 0,31


    OCR Scan     		PDF 10CJ5 600KF3 -FF130Â 12S-C, ff-130 diode SS 3

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V c es Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,25 R th J C 0,50 DC, pro Zweig / per arm


    OCR Scan     		PDF 3M035T7

    1BW TRANSISTOR

    Abstract: diode sg 5 ts
    Text: EUPEC 5 2 E J> FF 100 R 06 KF 34032^7 m 0000212 003 «UPEC 7 = 3 9 - 3 / Thermische Eigenschaften Transistor Transistor Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 100 A RthCK le Thermal properties


    OCR Scan     		PDF 34D32CI7 1BW TRANSISTOR diode sg 5 ts

    kme-3 baustein

    Abstract: No abstract text available
    Text: FF 300 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte Maximum rated values Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0 ,0 5 RthJC DC, pro Baustein / per module 0 ,1 pro Baustein / per module


    OCR Scan     		PDF

    vqe 24 d

    Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
    Text: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF T-34-3/ 34G3217 Q0G0275 vqe 24 d vqe 24 e DIODE BZ s2e transistor VQE 24

    Untitled

    Abstract: No abstract text available
    Text: FF 300 R 06 KF 2 Therm ische Eigenschaften Therm al properties 0,05 DC, pro Baustein / per module 0,10 DC, pro Zweig / per arm pro Baustein / per module 0,03 RthCK 0,06 pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties


    OCR Scan     		PDF 3403HT7

    603 transistor npn

    Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type


    OCR Scan     		PDF 000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906

    FZ 300 R 06 KL

    Abstract: No abstract text available
    Text: FF 400 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V cE S Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,0345°C/W DC, pro Z w e ig /p e r arm


    OCR Scan     		PDF FFUHJR06KF FFUMR06 FZ 300 R 06 KL