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    Panduit Corp DNE8512W

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    Panduit Corp DNE8512B

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    Panduit Corp DNE8519B

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    California Eastern Laboratories (CEL) NE851M03-A

    RF TRANS NPN 5.5V 4.5GHZ SOT363
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    California Eastern Laboratories (CEL) NE851M13-T3-A

    RF TRANS NPN 5.5V 4.5GHZ M13
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    NE851 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE851M03 NEC NPN Silicon Transistor Original PDF
    NE851M03-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-363 Original PDF
    NE851M03-T3 California Eastern Laboratories NPN SILICON TRANSISTOR Original PDF
    NE851M03-T3 NEC NPN Silicon Transistor. Original PDF
    NE851M13 California Eastern Laboratories NPN SILICON TRANSISTOR Original PDF
    NE851M13 NEC NE851M13 Original PDF
    NE851M13 NEC NECs NPN SILICON TRANSISTOR Original PDF
    NE851M13-A NEC TRANS GP BJT NPN 5.5V 0.1A 3M13 Original PDF
    NE851M13-T3 California Eastern Laboratories NPN SILICON TRANSISTOR Original PDF
    NE851M13-T3 NEC NPN Silicon Transistor. Original PDF
    NE851M13-T3-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN LOW PRO M13 SMD Original PDF
    NE851M13-T3-A NEC TRANS GP BJT NPN 5.5V 0.1A 3M13 REEL Original PDF
    NE851M33 California Eastern Laboratories NPN SILICON TRANSISTOR Original PDF
    NE851M33 NEC NPN Silicon Transistor. Original PDF
    NE851M33-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ M33 Original PDF
    NE851M33-AZ NEC TRANS GP BJT NPN 5.5V 0.1A 3SUPER LEAD-LESS MINI MOLD Original PDF
    NE851M33FB NEC NPN Silicon RF Transistor for High-frequency Low Noise 3-pin Super Lead-less Minimold (M33) Original PDF
    NE851M33FB-AZ NEC TRANS GP BJT NPN 5.5V 0.1A 3SUPER LEAD-LESS MINI MOLD Original PDF
    NE851M33FB-T3 NEC NPN Silicon RF Transistor for High-frequency Low Noise 3-pin Super Lead-less Minimold (M33) Original PDF
    NE851M33-T3 NEC NPN Silicon Transistor. Original PDF

    NE851 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE685

    Abstract: No abstract text available
    Text: NONLINEAR MODEL UPA862TD BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 NE685 Q2 NE851 Parameters Q1 NE685 Q2 NE851 IS 7.0e-16 137e-18 MJC 0.34 0.14 BF 109 166 XCJC 0.5 0.5 NF 1 0.9871 CJS VAF 15 20.4 VJS 0.75 0.75 IKF 0.19 50 MJS ISE 7.90e-13 80.4e-15 FC


    Original     		PDF UPA862TD 6e-12 855e-12 2e-12 73e-9 NE685 0e-16 90e-13 4e-12 18e-12

    LB 11899

    Abstract: NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 NE851M13 S21E NEC semiconductor 9135 Features of IC 7476
    Text: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW PUSHING FACTOR 0.35 • 0.7 LOW PHASE NOISE 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS • 0.7±0.05


    Original     		PDF NE851M13 NE851M13 LB 11899 NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 S21E NEC semiconductor 9135 Features of IC 7476

    transistor m33

    Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package


    Original     		PDF NE851M33 NE851M33-T3 transistor m33 NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC

    ic 7738

    Abstract: 2SC5801 NE851M13 NE851M13-T3 S21E kf 203 transistor NEC 2501 LE 240
    Text: NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05 E7


    Original     		PDF NE851M13 NE851M13 ic 7738 2SC5801 NE851M13-T3 S21E kf 203 transistor NEC 2501 LE 240

    maximum gain s2p

    Abstract: NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33, 0804 PKG) package


    Original     		PDF NE851M33 NE851M33-A NE851M33-T3 NE851M33-T3-A maximum gain s2p NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking

    NE851M33

    Abstract: NE851M33-T3-A
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33-A 50 pcs (Non reel)


    Original     		PDF NE851M33 NE851M33-A NE851M33-T3-A NE851M33 NE851M33-T3-A

    date code marking NEC

    Abstract: NEC TRANSISTOR MARKING CODE code marking NEC NEC MARKING CODE nec npn rf
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold package


    Original     		PDF NE851M33 NE851M33 NE851M33-T3 PU10343EJ01V0DS date code marking NEC NEC TRANSISTOR MARKING CODE code marking NEC NEC MARKING CODE nec npn rf

    BF166

    Abstract: rbm 1 NE851M13 PARAMETERS
    Text: NONLINEAR MODEL SCHEMATIC NE851M13 CCBPKG 0.05 pF CCB 0.01 pF LBPKG LB 0.05 nH 0.25 nH LCPKG 0.05 nH Collector Base CCE Q1 0.25 pF LE 0.45 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 137e-18 MJC


    Original     		PDF NE851M13 137e-18 4e-15 15e-12 532e-18 170e-15 4e-12 65e-12 BF166 rbm 1 NE851M13 PARAMETERS

    NEC 2551

    Abstract: 13E12
    Text: NONLINEAR MODEL NE851M03 CCBPKG SCHEMATIC 0.15 pF CCB 0.04 pF LBPKG LB 0.6 nH 0.004 nH Base LCPKG 0.7 nH Collector CCE Q1 0.28 pF LE 0.004 nH CCEPKG 0.08 pF LEPKG 0.65 nH CBEPKG 0.005 pF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 734.5e-18


    Original     		PDF NE851M03 5e-18 37e-15 22e-3 52e-18 759e-6 51e-12 2e-15 13e-12 6e-12 NEC 2551 13E12

    ic 7738

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE851M13 NE851M13 ic 7738

    2SC5801

    Abstract: 2SC5801-T3 2sc5801-a "3-PIN LEAD-LESS MINIMOLD" marking 654 3pin NE851M13
    Text: NPN SILICON RF TRANSISTOR NE851M13 / 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION


    Original     		PDF NE851M13 2SC5801 NE851M13-A 2SC5801-A NE851M13-T3-A 2SC5801-T3-A Dissipati33 PU10085EJ02V0DS 2SC5801 2SC5801-T3 "3-PIN LEAD-LESS MINIMOLD" marking 654 3pin

    8313 transistor to-3

    Abstract: board ccb2 kf 982 855E transistor Bf 981
    Text: SILICON TRANSISTOR UPA895TD NPN SILICON RF TWIN TRANSISTOR FEATURES LOW VOLTAGE, LOW CURRENT OPERATION Units in mm Package Outline TD (TOP VIEW) SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 IDEAL FOR 1-3 GHz OSCILLATORS 1 2 0.4 0.8 3 The UPA895TD contains two NE851 high frequency silicon


    Original     		PDF UPA895TD NE851 UPA895TD NE851 AN1026. 8313 transistor to-3 board ccb2 kf 982 855E transistor Bf 981

    nec 16312

    Abstract: 2SC5800 NE851M03 NE851M03-T3 S21E nec 9701
    Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS


    Original     		PDF NE851M03 NE851M03 nec 16312 2SC5800 NE851M03-T3 S21E nec 9701

    nec 16312 transistor

    Abstract: cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor NE851M03 16312 transistor SiS 671 transistor KF 507
    Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS


    Original     		PDF NE851M03 NE851M03 2e-15 AN1026. nec 16312 transistor cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor 16312 transistor SiS 671 transistor KF 507

    ic 7738

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE851M13 NE851M13 15e-12 170e-15 ic 7738

    kp 1006

    Abstract: AN1026 S21E UPA895TD UPA895TD-T3-A
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 NEC's UPA895TD contains two NE851 high frequency silicon bipolar chips. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. NEC's


    Original     		PDF UPA895TD NE851 kp 1006 AN1026 S21E UPA895TD-T3-A

    IC 2262 AF

    Abstract: LB 11899 2SC5801 applications IC 7476 160 e7 901 704 16 08 55 MJE 280 power transistor transistor BF 697 S21E NE851M13
    Text: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05


    Original     		PDF NE851M13 NE851M13 4e-12 65e-12 IC 2262 AF LB 11899 2SC5801 applications IC 7476 160 e7 901 704 16 08 55 MJE 280 power transistor transistor BF 697 S21E

    M33 TRANSISTOR

    Abstract: marking E7 NE851M33 NE851M33-T3 360 U
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33 50 pcs (Non reel)


    Original     		PDF NE851M33 NE851M33-T3 M33 TRANSISTOR marking E7 NE851M33 NE851M33-T3 360 U

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    150J10

    Abstract: mje 13006
    Text: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1) 3. Collector (Q2)


    Original     		PDF UPA862TD UPA862TD NE851 NE685 150J10 mje 13006

    KF 517

    Abstract: AN1026 NE685 S21E UPA862TD UPA862TD-T3-A
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)


    Original     		PDF UPA862TD NE851 NE685 KF 517 AN1026 S21E UPA862TD-T3-A

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF