VR 11
Abstract: KDV350F
Text: KDV350F SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V=2.8 Min. Low Series Resistance. : rS=0.5 CATHODE MARK (max.) C 1 D 2 Good C-V linearity. B A MAXIMUM RATING (Ta=25
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KDV350F
470MHz
VR 11
KDV350F
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NA MARKING
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV350 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. K L A H F ・Small Package. 1 E ・Low Series Resistance : rS=0.50Ω Max. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL
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KDV350
470MHz
NA MARKING
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KDV350E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL
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KDV350E
470MHz
KDV350E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV350F TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES 2004. 7. 14 Revision No : 0 1/2
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KDV350F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV350E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL
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KDV350E
470MHz
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NA MARKING
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV350 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. L K A H F ・Small Package. 1 E ・Low Series Resistance : rS=0.50Ω Max. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT
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KDV350
470MHz
NA MARKING
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KDV350
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV350 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. L K A H F ᴌSmall Package. 1 E ᴌLow Series Resistance : rS=0.50ή Max. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL
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KDV350
470MHz
KDV350
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KDV350E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV350E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES E C G 1 G A ・Small Package. ESC Package B CATHODE MARK ・Low Series Resistance : rS=0.50Ω(Max.) 2 MAXIMUM RATING (Ta=25℃) D CHARACTERISTIC
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KDV350E
470MHz
KDV350E
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KDV350E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV350E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking UK No. 2000. 12. 27 Item Marking Description Device Mark UK KDV350E Revision No :0 1/1
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KDV350E
KDV350E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV350 TECHNICAL DATA VCO. FEATURES 2008. 9. 11 Revision No : 2 1/2
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KDV350
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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marking code V6 33 surface mount diode
Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3
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ADE-508-010A
ADE-508-016
ADE-508-017
HVL355B
HVL358B
HVL368B
HVL375B
HVL385B
marking code V6 33 surface mount diode
philips surface mount zener diode v6
zener diode application
IPS302
04BZ
1w402
DIODE marking S4 59A
marking 513 SOD-323
MARKING 621 SOD-323
1w379
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IC SEM 2004
Abstract: kdv350f
Text: SEM IC O N D U C T O R KDV350F TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES C ATHODE MARK • High Capacitance Ratio : C lv/C 4v=2.8 Min. E • Low Series Resistance. : rs=0.5 Q , (max.) • Good C-V linearity.
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KDV350F
470MH
IC SEM 2004
kdv350f
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDV350 TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE vco. y FEATURES • Low Series Resistance : rs=0.50Q M ax. • Small Package. MAXIMUM RATING (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 15
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KDV350
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KDV350E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE vco. FEATURES • Low Series Resistance : rs=0.50£2 Max. • Small Package (ESC Package). MILLIMETERS MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT CHARACTERISTIC
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KDV350E
50ffl
470MHz
KDV350E
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