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    KDS2236M Search Results

    KDS2236M Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KDS2236M Korea Electronics AFC Application for FM Original PDF
    KDS2236M Korea Electronics AFC Application for FM Scan PDF
    KDS2236M Korea Electronics VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Scan PDF

    KDS2236M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KDS2236M

    Abstract: a016 2236a 2236 A
    Text: SEMICONDUCTOR KDS2236M MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking 2236 A 016 No. Item Marking Description 1 Device Name 2236 KDS2236M 2 Polarity A Anode 3 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009 16


    Original     		KDS2236M O-92M KDS2236M a016 2236a 2236 A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES 1998. 6. 15 Revision No : 2 1/2


    Original     		KDS2236M/S PDF

    KDS2236S

    Abstract: KDS2236M *2236 capacitance
    Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES High Q : Q=70 Min. (f=50MHz). O F Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C SYMBOL RATING UNIT Reverse Voltage


    Original     		KDS2236M/S 50MHz) 100nA O-92M 50MHz KDS2236S KDS2236M *2236 capacitance PDF

    KDS2236M

    Abstract: KDS2236S 2236A
    Text: KDS2236M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE TECHNICAL DATA AFC APPLICATION FOR FM RECEIVER. B A FEATURES ᴌHigh Q : Q=70 Min. (f=50MHz). O F ᴌLow Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25ᴱ)


    Original     		KDS2236M/S 50MHz) 100nA O-92M 50MHz KDS2236M KDS2236S 2236A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES ・High Q : Q=70 Min. (f=50MHz). O F ・Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25℃)


    Original     		KDS2236M/S 50MHz) 100nA KDS2236M) O-92M 50MHz PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD PDF

    KDS2236M

    Abstract: KDS2236S marking 4v
    Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. KDS2236M FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) (Vr=4V).


    OCR Scan     		KDS2236M/S 50MHz) 100nA KDS2236M) KDS2236S) KDS2236M T0-92M KDS2236S KDS2236M KDS2236S marking 4v PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNI CAL DATA KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES • High Q : Q=70 M in. (f=50MHz). • Low Reverse Current : IR=100nA(M ax.) (V R=4V). u DIM M ILLIM ETERS A 3.20 MAX


    OCR Scan     		KDS2236M/S 50MHz) 100nA O-92M PDF

    KDS2236M

    Abstract: KDS2236S st Diode marking EE
    Text: SEMICONDUCTOR TECHNICAL DATA KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) ( V r = 4 V ) . MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		KDS2236M/S 50MHz) 100nA KDS2236M TQ-92M KDS2236M) KDS2236S) KDS2236S KDS2236M KDS2236S st Diode marking EE PDF