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    KA BAND GAAS MESFET Search Results

    KA BAND GAAS MESFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DC092A-A Analog Devices LTC1550LCS8 - -4.1V OUTPUT GaA Visit Analog Devices Buy
    ADL5801ACPZ-R7 Analog Devices Wide Band Active Mixer Visit Analog Devices Buy
    HMC7357LP5GE Analog Devices C-Band PA Visit Analog Devices Buy
    HMC7357LP5GETR Analog Devices C-Band PA Visit Analog Devices Buy
    ADMV1009AEZ-R7 Analog Devices 13/15GHz GaAs UpConverter Visit Analog Devices Buy
    ADMV1009AEZ Analog Devices 13/15GHz GaAs UpConverter Visit Analog Devices Buy

    KA BAND GAAS MESFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAAPGM0012-DIE

    Abstract: MAAPGM0013-DIE Ka-band
    Text: RO-P-DS-3058 - - MAAPGM0013-DIE 200mW Ka-Band Power Amplifier 32.0-36.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 32.0-36.0 GHz GaAs MMIC Amplifier 200mW Output Power Level 32.0-36.0 GHz Operation Variable Drain Voltage 5-6V Operation Self-Aligned MSAG MESFET Process


    Original     		PDF RO-P-DS-3058 MAAPGM0013-DIE 200mW MAAPGM0012-DIE MAAPGM0013-DIE Ka-band

    AFM08P2-000

    Abstract: ka band gaas MESfet
    Text: Ka Band Power GaAs MESFET Chip AFM08P2-000 Features • 24 dBm Output Power @ 18 GHz 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 8.5 dB @ 18 GHz Drain ■ High Power Added Efficiency, 20% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM08P2-000 AFM08P2-000 6/99A ka band gaas MESfet

    k band MESFET S parameter

    Abstract: 16005-2 k MESFET S parameter 867 905 352 AFM06P2-000 ka band ka band gaas MESfet MESFET ka 2619
    Text: Ka Band Power GaAs MESFET Chip AFM06P2-000 Features • 22.5 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM06P2-000 AFM06P2-000 6/99A k band MESFET S parameter 16005-2 k MESFET S parameter 867 905 352 ka band ka band gaas MESfet MESFET ka 2619

    4232 gm

    Abstract: AFM04P2-000
    Text: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM04P2-000 AFM04P2-000 12/99A 4232 gm

    80846

    Abstract: 7912 pt 8819 62855 4407 f 4558 ma 8920 pt 2358
    Text: Ka Band Power GaAs MESFET AFM06P2-212, 213 Features 213 Drain • 22 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz Source Source ■ High Power Added Efficiency, 23% Gate Drain Source ■ Broadband Operation, DC–18 GHz ■ 0.25 µm Ti/Pd/Au


    Original     		PDF AFM06P2-212, The131 2/99A 80846 7912 pt 8819 62855 4407 f 4558 ma 8920 pt 2358

    AFM04P2

    Abstract: 43171 69318
    Text: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM04P2-000 6/99A AFM04P2 43171 69318

    ka band gaas MESfet

    Abstract: MAAPGM0012-DIE ka-band amplifier RO-P-DS-3059
    Text: RO-P-DS-3059 - - MAAPGM0012-DIE 50 mW Ka-Band Power Amplifier 31.5-36.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 31.5-36.0 GHz GaAs MMIC Amplifier 50 mW Output Power Level 31.5 - 36.0 GHz Operation Variable Drain Voltage 4-6V Operation Single Voltage Operation


    Original     		PDF RO-P-DS-3059 MAAPGM0012-DIE MAAPGM0012-DIE ka band gaas MESfet ka-band amplifier

    80846

    Abstract: pt 8819 MESFET S parameter ka band gaas MESfet ka band gaas mesfet Package ma 8920 pt 2358 AFM06P3-212 AFM06P3-213
    Text: Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features 213 • 22 dBm Output Power @ 18 GHz Drain Source ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% Source Gate Drain ■ Broadband Operation, DC–18 GHz Source ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM06P3-212, AFM06P3-213 6/99A 80846 pt 8819 MESFET S parameter ka band gaas MESfet ka band gaas mesfet Package ma 8920 pt 2358 AFM06P3-212 AFM06P3-213

    pt 23131

    Abstract: 80846
    Text: Ka Band Power GaAs MESFET Chips AFM06P2-212, AFM06P2-213 Features 213 • 22 dBm Output Power @ 18 GHz Drain Source ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% Source Gate Drain ■ Broadband Operation, DC–18 GHz Source ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM06P2-212, AFM06P2-213 6/99A AFM06P2-213 pt 23131 80846

    pt 11400

    Abstract: kaba
    Text: [□Alpha 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Features • Broad Coverage of Ka-Band ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 GHz ■ Dual Drain Bias ■ 0.25 ¡xm Ti/Pt/Au Gates ■ Passivated Surface Description Alpha’s three-stage reactively-matched Ka-band


    OCR Scan     		PDF AA038P1-00 pt 11400 kaba

    Untitled

    Abstract: No abstract text available
    Text: Ka-Band Power GaAs MESFET AFM04P2-00 Chip Layout Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC-^0 GHz ■ 0.25 xm Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-00 AFM04P2-00 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11

    am/PJ 0419

    Abstract: No abstract text available
    Text: ESAlpha Ka Band Power GaAs MESFET Chip AFM06P2-000 Features • 22.5 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM06P2-000 AFM06P2-000 6/99A am/PJ 0419

    PJ 0349

    Abstract: PJ 0459 jc 817 k MESFET S parameter pj 936 AFM04P2-000 S-12 ka 3525 ka 3525 a 149-188
    Text: ESAlpha Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-000 DC-40 AFM04P2-000 Through-subs151 6/99A PJ 0349 PJ 0459 jc 817 k MESFET S parameter pj 936 S-12 ka 3525 ka 3525 a 149-188

    XDL13.567968

    Abstract: 6/18/XDL13.567968
    Text: El]Alpha Ka-Band Power GaAs MESFET AFM06P2-000 Features • 22.5 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC-40 GHz ■ 0.25 |im Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM06P2-000 DC-40 AFM06P2-000 XDL13.567968 6/18/XDL13.567968

    Untitled

    Abstract: No abstract text available
    Text: ESAlpha Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features 213 • 22 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -18 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM06P3-212, AFM06P3-213 6/99A

    kaba

    Abstract: 149-188
    Text: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-000 61Alpha kaba 149-188

    PJ 0519

    Abstract: gm 4511 am/PJ 0529 Characteristic of mesfet AFM08P2-000 S-12 am/PJ 0519
    Text: ESAlpha Ka Band Power GaAs MESFET Chip A F M 08P 2-000 Features • 24 dBm Output Power @ 18 GHz ■ High Associated Gain, 8.5 dB @ 18 GHz ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM08P2-000 DC-40 AFM08P2-000 6/99A PJ 0519 gm 4511 am/PJ 0529 Characteristic of mesfet S-12 am/PJ 0519

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bOE » • 7 ^ 4 1 4 2 0D12012 STfi «SflGK gj HARRIS HMF-03400 Ku-Ka BAND GaAs FET PRELIMINARY DATA SHEET May 1992 Features • 0.25 Micron Gate Length • Ti/Pt/Au Metallization Enhances Durability and Reliability • Optimized for High Frequency


    OCR Scan     		PDF 0D12012 HMF-03400 HMF-03400 leng47

    Untitled

    Abstract: No abstract text available
    Text: □ A lp h a Ka-Band Power GaAs MESFET AFM08P2-000 Features • 24 dBm Output Power at 18 G H z ■ High Associated Gain, 8.5 dB at 18 G H z ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -4 0 GHz ■ 0.25 j.m Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM08P2-000

    PT 8830

    Abstract: No abstract text available
    Text: Ka-Band Power GaAs MESFET AFM04P2-00 Features Chip Layout • 21 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-00 MA01801 PT 8830

    XDL13.567968

    Abstract: max2705 0/XDL13.567968
    Text: Ka-Band Power GaAs MESFET EEAlpha AFM06P2-00 Features Chip Layout • 22.5 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 nm Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM06P2-00 osc138 XDL13.567968 max2705 0/XDL13.567968

    4511 gm

    Abstract: gm 4511 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
    Text: ^ Alpha Ka-Band Power GaAs MESFET AFM08P2-00 Chip Layout Features • 24 dBm Output Power at 18 G H z ■ High Associated Gain, 8.5 dB at 18 G H z ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 |un Ti/Pt/Au Gates ■


    OCR Scan     		PDF AFM08P2-00 DC-40 AFM08P2-00 AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 4511 gm gm 4511 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10

    Ablebond 84-1*SR4

    Abstract: No abstract text available
    Text: 30-35 GHz GaAs EBAlpha MMIC Driver Amplifier AA035P3-00 Features • Broad Coverage of Ka-Band ■ 18 dB Small Signal Gain ■ P1 dB = 17 dBm at 35 GHz ■ Self-Bias Design ■ Low Power Consumption, 260 mA, 6V Typical ■ 0.25 |iim Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AA035P3-00 AA035P3-00 Ablebond 84-1*SR4

    19509

    Abstract: 86-395
    Text: Ka-Band Power GaAs MESFET AFM08P2-00 Features Chip Layout 24 dBm Output Power at 18 G H z Drain J a High Associated Gain, 8.5 dB at 18 G H z S3 Il JL JL JL TT 1 1 1 L 1 1 om m pm po High Power Added Efficiency, 20% Broadband Operation, D C -4 0 G H z 0.25 jim Ti/Pt/Au Gates


    OCR Scan     		PDF AFM08P2-00 19509 86-395