Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AFM04P2 Search Results

    AFM04P2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFM04P2-000 Alpha Industries Ka Band Power GaAs MESFET Chip Original PDF
    AFM04P2-000 Alpha Industries Ka Band Power GaAs MESFET Chip Scan PDF
    AFM04P2-000LF Skyworks Solutions FET Transistor: Ka Band Power GaAs MESFET Chip Original PDF

    AFM04P2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AFM04P2

    Abstract: 43171 69318
    Text: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM04P2-000 6/99A AFM04P2 43171 69318

    4232 gm

    Abstract: AFM04P2-000
    Text: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM04P2-000 AFM04P2-000 12/99A 4232 gm

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    ka band gaas fet Package

    Abstract: ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz
    Text: GaAs FETs and PHEMTs 3 9 Q. & Specifications Applications Package Part Number 21 dB Pi dB @ 18 GHz Medium Power Amplifier Chip Via AFM04P2-000 Low Noise/Medium Power MESFET 20 dB Pi dB @ 18 GHz Medium Power Amplifier Chip (Non-Via) AFM04P3-000 Low Noise/Medium


    OCR Scan     		PDF AFM04P2-000 AFM04P3-000 AFM04P3-212 AFM04P3-213 AFM06P2-000 AFM06P2-212 AFM06P2-213 AFM06P3-212 AFM06P3-213 AFM08P2-000 ka band gaas fet Package ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz

    kaba

    Abstract: 149-188
    Text: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-000 61Alpha kaba 149-188

    PT 8830

    Abstract: No abstract text available
    Text: Ka-Band Power GaAs MESFET AFM04P2-00 Features Chip Layout • 21 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-00 MA01801 PT 8830

    AFM04P2-000

    Abstract: AFP02N3-000 afp02n3-213
    Text: Section 1 GaAs FETs and PHEMTs Numerical Index Part Number Page AFM02N6-000 1-7 AFM02N6-032 1-3 AFM02N6-212 1-11 AFM02N6-213 1-11 AFM04P2-000 1-26 AFM04P3-104 1-28 AFM04P3-213 1-31 AFM04P3-214 1-31 AFM06P2-000 1-34 AFM08P2-000 1-36 AFP02N3-000 1-15 AFP02N3-104


    OCR Scan     		PDF AFM02N6-000 AFM02N6-032 AFM02N6-212 AFM02N6-213 AFM04P2-000 AFM04P3-104 AFM04P3-213 AFM04P3-214 AFM06P2-000 AFM08P2-000 AFP02N3-000 afp02n3-213

    Untitled

    Abstract: No abstract text available
    Text: Ka-Band Power GaAs MESFET AFM04P2-00 Chip Layout Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC-^0 GHz ■ 0.25 xm Ti/Pt/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-00 AFM04P2-00 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11

    PJ 0349

    Abstract: PJ 0459 jc 817 k MESFET S parameter pj 936 AFM04P2-000 S-12 ka 3525 ka 3525 a 149-188
    Text: ESAlpha Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-000 DC-40 AFM04P2-000 Through-subs151 6/99A PJ 0349 PJ 0459 jc 817 k MESFET S parameter pj 936 S-12 ka 3525 ka 3525 a 149-188

    AFP02N2

    Abstract: No abstract text available
    Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Numerical Index Part Number Page Part Number Page AA022N1-00 3-18 AFM06P2-00 3-42 AA022N1-65 3-19 AFM08P2-00 3-44 AA022P1-00 3-13 AFP02N2-00 3-58 AA022P1-65 3-16 AFP02N2-55 3-62 AA028N1-00 3-29 AFP02N2-56 3-62


    OCR Scan     		PDF AA022N1-00 AA022N1-65 AA022P1-00 AA022P1-65 AA028N1-00 AA028P1-00 AA028P2-00 AA028P3-00 AA035P2-00 AA035P3-00 AFP02N2