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    K4S28163 Price and Stock

    Samsung Semiconductor K4S281632F-TC75000

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    Samsung Semiconductor K4S281632E-TC75T00

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    Bristol Electronics K4S281632E-TC75T00 2,000
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    Samsung Semiconductor K4S281632B-TL1L00

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    Bristol Electronics K4S281632B-TL1L00 1,344
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    Samsung Semiconductor K4S281632B

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    Bristol Electronics K4S281632B 1,344
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    Samsung Semiconductor K4S281632I-UC75

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    Bristol Electronics K4S281632I-UC75 26 1
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    K4S28163 Datasheets (141)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K4S281632B Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S281632B-N Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM in sTSOP Original PDF
    K4S281632B-NC1H Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632B-NC1L Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632B-NC/L1H Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=2), interface LVTTL, Original PDF
    K4S281632B-NC/L1L Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S281632B-NL1H Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632B-NL1L Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632B-TC10 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 66MHz Original PDF
    K4S281632B-TC1H Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632B-TC1L Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632B-TC75 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 133MHz Original PDF
    K4S281632B-TC80 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 125MHz Original PDF
    K4S281632B-TL10 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 66MHz Original PDF
    K4S281632B-TL1H Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632B-TL1L Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632B-TL75 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 133MHz Original PDF
    K4S281632B-TL80 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 125MHz Original PDF
    K4S281632C Unknown 128Mbit SDRAM Original PDF
    K4S281632C Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    ...

    K4S28163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S28163LD

    Abstract: K4S28163
    Text: Mobile SDRAM VDD 2.5V, VDDQ 1.8V & 2.5V K4S28163LD-RG(S) Preliminary CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 85°C Operation) Revision 0.6 October 2001 Rev. 0.6 Oct. 2001 Mobile SDRAM (VDD 2.5V, VDDQ 1.8V & 2.5V) K4S28163LD-RG(S) Preliminary


    Original     		PDF K4S28163LD-RG 8Mx16 128Mb PC133, PC100, 200us. K4S28163LD K4S28163

    sdram cmos

    Abstract: No abstract text available
    Text: CMOS SDRAM K4S28163LD-RF/R 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RF/R CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Preliminary) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).


    Original     		PDF K4S28163LD-RF/R 8Mx16 54CSP 128Mb 133MHz, 100MHz, 66MHz. K4S28163LD-RG/SXX K4S28163LD-RF/RXX sdram cmos

    K4S281632C-TL1L

    Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L


    Original     		PDF 144pin) 128Mb M466S0924CT0-L1L, 8Mx64 8Mx16 K4S281632C-TL1L, 000mil 4K/64ms 128bytes 256bytes K4S281632C-TL1L M466S1723CT2-L1L M466S1723CT3-L1L

    Untitled

    Abstract: No abstract text available
    Text: K4S28163LD-R B F/R CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)F/R CMOS SDRAM 2M x 16Bit x 4 Banks Mobile sDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S28163LD-R 8Mx16 54CSP 16Bit

    K4S28163LD

    Abstract: No abstract text available
    Text: K4S28163LD-R B G/S CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)G/S CMOS SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S28163LD-R 8Mx16 54CSP 16Bit K4S28163LD

    K4S281632K

    Abstract: k4s281632k-ui K4S28163 K4S2816
    Text: Industrial Synchronous DRAM K4S281632K 128Mb K-die SDRAM Specification Industrial Temp. -40 to 85°C RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S281632K 128Mb A10/AP K4S281632K k4s281632k-ui K4S28163 K4S2816

    K4S281632K-UC

    Abstract: K4S281632K K4S280832K K4S281632KUC K4S280432K K4S280432K-U K4S28163
    Text: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S280432K K4S280832K K4S281632K 128Mb A10/AP K4S281632K-UC K4S281632K K4S280832K K4S281632KUC K4S280432K K4S280432K-U K4S28163

    K4S281632B-N

    Abstract: No abstract text available
    Text: shrink-TSOP CMOS SDRAM K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by


    Original     		PDF K4S281632B-N 16Bit K4S281632B-N 54-sTSOP

    K4S281633D

    Abstract: No abstract text available
    Text: K4S281633D-R B L/N/P CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S281633D-R(B)L/N/P CMOS SDRAM 2M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S281633D-R 8Mx16 54CSP 16Bit K4S281633D

    K4S28163LD

    Abstract: No abstract text available
    Text: K4S28163LD-R B L/N/P CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)L/N/P CMOS SDRAM 2M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S28163LD-R 8Mx16 54CSP 16Bit K4S28163LD

    K4S280832

    Abstract: K4S281632K-U
    Text: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S280432K K4S280832K K4S281632K 128Mb A10/AP K4S280832 K4S281632K-U

    K4S281632C-N

    Abstract: samsung 0441 K4S281632C-NL K4S281632CNL
    Text: shrink-TSOP CMOS SDRAM K4S281632C-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S281632C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by


    Original     		PDF K4S281632C-N 16Bit K4S281632C-N 54-sTSOP samsung 0441 K4S281632C-NL K4S281632CNL

    Untitled

    Abstract: No abstract text available
    Text: K4S281632D CMOS SDRAM 128Mbit SDRAM Industrial Temp Support 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D CMOS SDRAM


    Original     		PDF K4S281632D 128Mbit 16Bit 100MHz A10/AP

    K4S28163LD

    Abstract: No abstract text available
    Text: VDD 2.5V, VDDQ 1.8V & 2.5V Preliminary K4S28163LD-RL(N) CMOS SDRAM 8Mx16 SDRAM 54CSP Revision 0.3 October 2001 Rev. 0.3 Oct. 2001 (VDD 2.5V, VDDQ 1.8V & 2.5V) Preliminary K4S28163LD-RL(N) CMOS SDRAM Revision History Revision 0.0 (June 4. 2001, Target) • First generation of 128Mb Low Power SDRAM not having Mobile feature.


    Original     		PDF K4S28163LD-RL 8Mx16 54CSP 128Mb K4S281634D-RXXX K4S28163LD-RXXX. 200us. K4S28163LD

    K4S281632F-TC75

    Abstract: M366S0924FTS-C7A 64Mb samsung SDRAM
    Text: SERIAL PRESENCE DETECT M366S0924FTS-C7A Organization :8Mx64 Composition :8Mx16*4ea Used component part # :K4S281632F-TC75 # of rows in module:1 Row # of banks in component :4 banks Feature :1,000 mil height & single sided component Refresh :4K/64ms Contents :


    Original     		PDF M366S0924FTS-C7A 8Mx64 8Mx16 K4S281632F-TC75 4K/64ms 128bytes 100MHz 100MHz K4S281632F-TC75 M366S0924FTS-C7A 64Mb samsung SDRAM

    K4S281632I

    Abstract: K4S280832I k4s281632 8Mb x 16 K4S280432i
    Text: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S280432I K4S280832I K4S281632I 128Mb A10/AP K4S281632I K4S280832I k4s281632 8Mb x 16 K4S280432i

    K4S281632K

    Abstract: K4S281632K-UI K4S281632K-U X2097
    Text: Industrial Synchronous DRAM K4S281632K 128Mb K-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S281632K 128Mb A10/AP K4S281632K K4S281632K-UI K4S281632K-U X2097

    K4S281632B-TC/L1L

    Abstract: K4S281632B K4S281632B-TC-L1H
    Text: K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632B CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S281632B 128Mbit 16Bit K4S281632B A10/AP K4S281632B-TC/L1L K4S281632B-TC-L1H

    K4S281632M-TL10

    Abstract: M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb M-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924MT0-L10 • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632M-TL10


    Original     		PDF 144pin) 128Mb M466S0924MT0-L10 8Mx64 8Mx16 K4S281632M-TL10 000mil 4K/64ms 128bytes 256bytes K4S281632M-TL10 M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m

    sdram cmos

    Abstract: K4S28163LD
    Text: Mobile SDRAM VDD 2.5V, VDDQ 1.8V & 2.5V K4S28163LD-RF(R) Preliminary CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 70°C Operation) Revision 0.6 October 2001 Rev. 0.6 Oct. 2001 Mobile SDRAM (VDD 2.5V, VDDQ 1.8V & 2.5V) K4S28163LD-RF(R) Preliminary


    Original     		PDF K4S28163LD-RF 8Mx16 128Mb 133MHz, 100MHz, 66MHz. 200us. sdram cmos K4S28163LD

    K4S281633D

    Abstract: K4S281633D-RL
    Text: Preliminary K4S281633D-RL N CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2001 Rev. 0.6 Nov. 2001 Preliminary K4S281633D-RL(N) CMOS SDRAM Revision History Revision 0.0 (February 21. 2001, Target) • First generation of 128Mb Low Power SDRAM without special function (V DD 3.0V, V DDQ 3.0V)


    Original     		PDF K4S281633D-RL 8Mx16 54CSP 128Mb 200us. K4S281633D

    Untitled

    Abstract: No abstract text available
    Text: CMOS SDRAM K4S28163LD-RG/S 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RG/S CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Target) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).


    Original     		PDF K4S28163LD-RG/S 8Mx16 54CSP 128Mb PC133, PC100, K4S28163LD-RG

    Untitled

    Abstract: No abstract text available
    Text: K4S281632A CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632A CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S281632A 128Mbit 16Bit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function 128Mbit SDRAM CMOS Type K4S281632D-TL1L Model AVIC-ZH8017ZT VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address


    Original     		PDF 128Mbit K4S281632D-TL1L AVIC-ZH8017ZT A0-A11 DQ0-DQ15 A10/AP