K4Q160411C Search Results

K4Q160411C Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4Q160411C-B-50		Samsung Electronics	4M x 4-Bit CMOS Quad Inverted CAS DRAM with Extended Data Out		Original	PDF
K4Q160411C-BC50		Samsung Electronics	DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin		Original	PDF
K4Q160411C-BC60		Samsung Electronics	DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin		Original	PDF
K4Q160411C-BL50		Samsung Electronics	DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin		Original	PDF
K4Q160411C-BL60		Samsung Electronics	DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin		Original	PDF
K4Q160411C-FC50		Samsung Electronics	DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin		Original	PDF
K4Q160411C-FL60		Samsung Electronics	DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin		Original	PDF

K4Q160411C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
0411C Abstract: No abstract text available Text: K4Q170411C, K4Q160411C CMOS DRAM 4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Quad CAS with Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Refresh cycle 2K Ref. or 4K Ref. , access	Original	K4Q170411C, K4Q160411C mod11C, 300mil 0411C	PDF
Untitled Abstract: No abstract text available Text: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C	Original	M53640400CW0/CB0 M53640410CW0/CB0 M53640410CW0/CB0 M5364040 4Mx36bits 24-pin 28-pin 72-pin	PDF
64mb edo dram simm Abstract: K4E160411C Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C	Original	M53640412CW0/CB0 M53640412CW0/CB0 M53640412C 4Mx36bits M53640412C 24-pin 28-pin 72-pin M53640412CW0 64mb edo dram simm K4E160411C	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C	Original	M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0	PDF
DQ9-DQ12 Abstract: No abstract text available Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C	Original	M53640800CW0/CB0 M53640810CW0/CB0 M53640810CW0/CB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin DQ9-DQ12	PDF