K4E160412C
Abstract: No abstract text available
Text: K4E170411C, K4E160411C K4E170412C, K4E160412C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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K4E170411C,
K4E160411C
K4E170412C,
K4E160412C
adva160412C
300mil
K4E160412C
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4Mx32bits
Abstract: No abstract text available
Text: M53230400CW0/CB0 M53230410CW0/CB0 DRAM MODULE M53230400CW0/CB0 & M53230410CW0/CB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C
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M53230400CW0/CB0
M53230410CW0/CB0
M53230410CW0/CB0
M5323040
4Mx32bits
24-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C
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M53640400CW0/CB0
M53640410CW0/CB0
M53640410CW0/CB0
M5364040
4Mx36bits
24-pin
28-pin
72-pin
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64mb edo dram simm
Abstract: K4E160411C
Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C
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M53640412CW0/CB0
M53640412CW0/CB0
M53640412C
4Mx36bits
M53640412C
24-pin
28-pin
72-pin
M53640412CW0
64mb edo dram simm
K4E160411C
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C
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M53640812CW0/CB0
M53640812CW0/CB0
M53640812C
8Mx36bits
M53640812C
24-pin
28-pin
72-pin
M53640812CW0
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Untitled
Abstract: No abstract text available
Text: M53230800CW0/CB0 M53230810CW0/CB0 DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C
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M53230800CW0/CB0
M53230810CW0/CB0
M53230810CW0/CB0
M5323080
8Mx32bits
24-pin
72-pin
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DQ9-DQ12
Abstract: No abstract text available
Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C
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M53640800CW0/CB0
M53640810CW0/CB0
M53640810CW0/CB0
M5364080
8Mx36bits
24-pin
28-pin
72-pin
DQ9-DQ12
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