Untitled
Abstract: No abstract text available
Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please
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NCP03WF104J05RL
NCP03WL104J05RL
NCP03WL154J05RL
NCP03WL224J05RL
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k 2750 transistor
Abstract: 4557 ic NCP03XH103F05RL NCP03WF104F05RL thermistor 10k 3380 0603 3539 transistor IC 4543 NCP03XM102p05RL NCP03WL473p05RL NCP03XV103p05RL
Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please
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Original
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NCP03YS110J05RL
NCP03YS220J05RL
NCP03YS330J05RL
NCP03YS470J05RL
NCP03YS680J05RL
NCP03YS101J05RL
NCP03XM102p05RL
NCP03XM152p05RL
NCP03XM222p05RL
NCP03XM332p05RL
k 2750 transistor
4557 ic
NCP03XH103F05RL
NCP03WF104F05RL
thermistor 10k 3380 0603
3539 transistor
IC 4543
NCP03WL473p05RL
NCP03XV103p05RL
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NCP03WF104F05RL
Abstract: NCP03XH103F05RL NCP15WB473F03RC NCP18WF104F12RB NCP18XH103F03RB PRF18BB471QB5RB PRF18BA103QB1RB NCP15XH103F03RC NCP15 thermistor nickel 500 ohm
Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.
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NCP18
NCP21
R01E-1
NCP03WF104F05RL
NCP03XH103F05RL
NCP15WB473F03RC
NCP18WF104F12RB
NCP18XH103F03RB
PRF18BB471QB5RB
PRF18BA103QB1RB
NCP15XH103F03RC
NCP15
thermistor nickel 500 ohm
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thermistor ptc 15k ohm
Abstract: NCP15XH103F03RC NCP03XH103F05RL of thermistor 4.7K ohms ntc NCP15WB473F03RC NCP18XH103F03RB NCP18WF104F12RB THERMISTOR NTC 1100 ohm PRF18BA471QB5RB PRF15BD102RB6RC
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.
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900ppm,
900ppm
1500ppm
UL1434,
E137188)
150mm
R01E-2
thermistor ptc 15k ohm
NCP15XH103F03RC
NCP03XH103F05RL
of thermistor 4.7K ohms ntc
NCP15WB473F03RC
NCP18XH103F03RB
NCP18WF104F12RB
THERMISTOR NTC 1100 ohm
PRF18BA471QB5RB
PRF15BD102RB6RC
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NCP18WF104F12RB
Abstract: NCP15WF104F03RC NCP15XH103F03RC k 2750 transistor NCP18XH103F03RB BF transistor series catalog NCP15WB473F03RC traffic light using 68K R01E thermistor ptc 15k ohm
Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station
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MMA20312BV
MMA20312BVT1
MMA20312BV
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smd transistor 6g
Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731-6G
BLS6G2731-6G
smd transistor 6g
6G smd transistor
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
nxp 544
200B
TAJD106K035R
transistor equivalent table
sot975c
radar circuit component
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IEGT
Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.
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BEE0030A
IEGT
TOSHIBA IEGT
MG1200FXF1US53
MG400FXF2YS53
MG800FXF1US53
MG800FXF
toshiba gto
IEGT toshiba
MG800FX
MG1200FXF1US51
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Untitled
Abstract: No abstract text available
Text: NTC Thermistors The NTC Thermistors This is a Negative Temperature Coefficient Resistor whose resistance changes as ambient temperature changes. Thermistor comprises 2 or 4 kinds of metal oxides of iron, nickel, cobalt, manganese and copper, being shaped and sintered
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99029 transistor
Abstract: transistor 99029 thermistor 10k ohm Senju M705-221BM5-42-11 NTC thermistor 10k ohm Data sheet of thermistor 47K ohms ntc T 1829-1 transistor NTC Thermistor 100 Ohm NCP18WF104F M705-221BM5-42-11
Text: R44E9.pdf 05.4.13 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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R44E9
NCP03
300mm/min.
99029 transistor
transistor 99029
thermistor 10k ohm
Senju M705-221BM5-42-11
NTC thermistor 10k ohm
Data sheet of thermistor 47K ohms ntc
T 1829-1 transistor
NTC Thermistor 100 Ohm
NCP18WF104F
M705-221BM5-42-11
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
32N60BS
40N60A
ixgh 1500
25N120
200n60
60n60 igbt smd
10N60A
30N60A
.25N100
20n60a
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40n80
Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
10N100
17N100
25N100
40n80
IXGH40N60
12N60U1
40N80A
50N60AU1
20n60 igbt
igbt 20n60
60n60 ixgh
IXGA24N60A
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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50R0500
Abstract: 5SSB30X 5SSB30X0800 thyris
Text: S I L I C O N S U R G E Diffused pnp structure. Symmetric blocking characteristics with avalanche breakdown capability. Effective protection against repetitive and non-repetitive overvoltages. Suitable for thyristors, transistors and IGBTs. Type and ordering
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5SSA20R15
50X0400
38X0600
30X0800
26X2200
23X2400
23X2600
20X2800
20X3000
50R0500
5SSB30X
5SSB30X0800
thyris
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2SK1653
Abstract: K1653
Text: TOSHIBA 2SK1653 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 653 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 10 ±0.3 $53.2 ± 0.2
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2SK1653
2SK1653
K1653
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Untitled
Abstract: No abstract text available
Text: 3SE D m Ô23fc.320 0 0 1 7 2 3 Ì NPN Silicon Switching Transistor SIEM ENS/ • • • SPCL-, 3 BISIP SMBT 3904 SEM ICO N D S _ High D C current gain: 0.1 to 100 mA Low collector-emltter saturation voltage Complementary type: S M B T 3906 PNP
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Q68000-A4340
Q68000-A4416
SmA10'
SMBT3904
001753b
T-35-11
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30X0900
Abstract: 555B 55SA 50R0500 5SSB30X1600 5SSA30R1000 5SBB20T1 5sbb 5SBD
Text: Silicon Surge Voltage Suppressors Diffundierte pnp-Struktur. Symmetrische Sperrkennlinie mit kontrollierter Avalanche-Charakteristik. Effektiver Schutz gegen repetitive und transiente Überspannungen. Geeignet für den Schutz von Thyristoren, Transistoren und IGBTs.
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001bfi3fi
5SBB20T11
VBO/100
VR/100inV
000007b
30X0900
555B
55SA
50R0500
5SSB30X1600
5SSA30R1000
5SBB20T1
5sbb
5SBD
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2SK1653
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType l?-7t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance
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2SK1653
100nA
20kii)
2SK1653
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2SK1542
Abstract: No abstract text available
Text: TOSHIBA 2SK1542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 5 42 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive
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2SK1542
2SK1542
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2SC2742
Abstract: 2749 n2761
Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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500MHz,
7-C-25X)
V-25T!
Tc-25
2SC2742
2749
n2761
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K1792
Abstract: No abstract text available
Text: TOSHIBA 2SK1792 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 792 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS TO-22QFL _ U nit in mm 10.3M AX.
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2SK1792
O-22QFL
K1792
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Transistor BC 227
Abstract: Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940
Text: 1 TELEFUNKEN ELECTRONIC 1?E I> a^SOD^b ODGSbll fi • AL6C S 637 T electronic CrwtiWfochnotogtes Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application for high voltages where as very low input power is required
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DIN41
15A3DIN
Transistor BC 227
Electronic car ignition circuit
IRF 940 TRANSISTOR
Transistor S 637 T
s637t
TRANSISTOR G13
npn transistors 400V low power to92
A27 637
Marking Code A27 DIODE
irf 940
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Untitled
Abstract: No abstract text available
Text: Tem ic U3900BM S e m i c o n d u c t o r s Programmable Telephone Audio Processor Description The programmable telephone audio processor U3900BM is a linear integrated circuit for use in feature phones, answering machines, fax machines and cordless phones.
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U3900BM
U3900BM
D-74025
15-Apr-99
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LT 5232
Abstract: epa 2130 DR640 sinus wave oscillator ROB3 kss delay line ms-19
Text: Temic U3900BM S e m i c o n ü u c tors Programmable Telephone Audio Processor Description The programmable telephone audio processor U3900BM is a linear integrated circuit for use in feature phones, answering machines, fax machines and cordless phones. It contains the speech circuit, tone-ringer interface with
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U3900BM
U3900BM
D-74025
25-Aug-98
LT 5232
epa 2130
DR640
sinus wave oscillator
ROB3
kss delay line ms-19
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