STPS2L60U
Abstract: "Schottky Rectifiers" schottky diode SMB marking code 120 DO-221 ecopack2 Diode SMB marking code 14
Text: STPS2L60 Power Schottky rectifier Features • Negligible switching losses ■ Low forward voltage drop ■ Surface mount miniature package ■ Avalanche capability specified ■ ECOPACK2 compliant component SMB flat A K DO-41 STPS2L60 Description Axial and surface mount power Schottky rectifiers
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STPS2L60
DO-41
DO221-AA)
STPS2L60UF
DO-214AC)
STPS2L60A
STPS2L60U
"Schottky Rectifiers"
schottky diode SMB marking code 120
DO-221
ecopack2
Diode SMB marking code 14
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604g transistor
Abstract: 606G 608G 610G KBJ604G KBJ610G
Text: LITE-ON SEMICONDUCTOR KBJ604G thru KBJ610G REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 6.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES KBJ Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic
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KBJ604G
KBJ610G
E95060
300us
604g transistor
606G
608G
610G
KBJ610G
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GBJ2004
Abstract: GBJ2006 GBJ2008 GBJ2010
Text: LITE-ON SEMICONDUCTOR GBJ2004 thru GBJ2010 REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 20 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBJ FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.
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GBJ2004
GBJ2010
E95060
90MPERATURE
300us
GBJ2006
GBJ2008
GBJ2010
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SBF2060CT
Abstract: 2060CT
Text: SBF2050CT thru 2060CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 20 Amperes FEATURES ITO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency
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SBF2050CT
2060CT
ITO-220AB
ITO-220AB
300us,
L42xH25xW25mm
SBF2060CT
2060CT
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS EP6KE SERIES REVERSE VOLTAGE - 6.8 to 20 Volts POWER DISSIPATION - 600 WATTS DO-15 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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DO-15
DO-15
otherwisEP6KE16A
EP6KE18A
EP6KE20A
EP6KE10CA
EP6KE11CA
EP6KE12CA
EP6KE13CA
EP6KE15CA
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30 MBR
Abstract: 3045CT
Text: LITE-ON SEMICONDUCTOR MBR3030CT thru 3060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency
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MBR3030CT
3060CT
O-220AB
O-220AB
MBR3030CT
MBR3045CT
MBR3050CT
MBR3060CT
300us
30 MBR
3045CT
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Untitled
Abstract: No abstract text available
Text: B0520W thru B0540W SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 0.5 Ampere FEATURES SOD-123 • Low Forward Voltage Drop • High Conductance • Guard Ring Construction for Transient Protection SOD-123 Dim. Min.
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B0520W
B0540W
OD-123
OD-123
J-STD-020D
2002/95/EC
B0540W
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30 MBR
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR MBR3030PTL thru 3060PTL REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-3P FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency
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MBR3030PTL
3060PTL
MBR3030PTL~
MBR3045PTL
MBR3050PTL
MBR3060PTL
300us
300ua
Jul-2006,
KTHD23
30 MBR
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Untitled
Abstract: No abstract text available
Text: B520C thru B540C REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 5.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES • For surface mounted applications SMC • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop
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B520C
B540C
300us
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marking code diode R12
Abstract: marking R12 STPR120A pr sma package pr sma marking pr sma
Text: STPR120A HIGH EFFICIENCY FAST RECOVERY DIODE Table 1: Main Product Characteristics IF AV 1A VRRM 200 V Tj (max) 150°C VF(max) 0.74 V trr (max) 35 ns SMA (JEDEC DO-214AC) STPR120A FEATURES AND BENEFITS • ■ ■ ■ Very low switching losses Low forward voltage drop
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STPR120A
DO-214AC)
marking code diode R12
marking R12
STPR120A
pr sma package
pr sma marking
pr sma
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PAD105
Abstract: No abstract text available
Text: B240LA SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – FORWARD CURRENT – 40 Volts 2.0 Amperes FEATURES • For surface mounted applications SMA • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop
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B240LA
300us
PAD105
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P4KE11A
Abstract: P4KE10A Lite-On Power Semiconductor
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS P4KE SERIES REVERSE VOLTAGE - 6.8 to 440 Volts POWER DISSIPATION - 400 WATTS DO-41 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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DO-41
DO-41
phE110CA
P4KE120CA
P4KE130CA
P4KE150CA
P4KE160CA
P4KE170CA
P4KE180CA
P4KE200CA
P4KE11A
P4KE10A
Lite-On Power Semiconductor
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KDXA01
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR Sidac High Voltage Sillicon Bidirectional Thyristors SD09A-D SERIES SIDACS 0.9 AMPERES RMS 105 thru 240 VOLTS FEATURES High pulse current capability, typ=120A/us Glass passivation insures reliable operation Compact package, T1 Package
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SD09A-D
20A/us
-100mA
2002/95/EC
ouSD09A160D
SD09A220D
SD09A240D
S09XXXYZ
KDXA01
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mbrf10150ct
Abstract: 10200c
Text: LITE-ON SEMICONDUCTOR MBRF10150CT thru 10200CT REVERSE VOLTAGE - 150 to 200 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES M B DIM. K A D PIN 94V-0 2 Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.70 grams
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MBRF10150CT
10200CT
ITO-220AB
ITO-220AB
300us
10200c
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65A6
Abstract: P-FBGA289
Text: E ï3 JuL2003 -oooooooooiooooooooo -OOOOOOOOOIOOOOOOOOO o o oo oo oo oioo oo oo oo o o o oo oo oo oioo oo oo oo o o o oo oo oo oioo oo oo oo o o o oo oo oo oioo oo oo oo o oooooo oo o o o o oooooo oo o o o o 100.0000_ I_oooooo. OOOOOO • I ■ o'oooóo
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P-FBGA289-1313-0
Jul2003OOOOOOOOOIOOOOOOOOO
Jul2003
65A6
P-FBGA289
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Untitled
Abstract: No abstract text available
Text: T H I5 D R A W IN G IS U N P U B L I S H E D . COPYRIGHT 19 RELEASED BY AMP INCORPORATED. FOR ALL LOC PUBLICATION RIGHTS RESERVED. REV I S IONS D IST DY LTR DATE DESCRIPTION ;JUL2008 NPR PER E C R - 08 - 0 I4 3 0 5 DWN A PV D S YJ LSF NOTES m □ — H HRnRnRRnRnRRnRnRRnRnHHHHHHHHHHHHHHHHHHHH
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JUL2008
3APR2008
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OVEN
Abstract: ATE ESP
Text: T H 1S DRAW jP NG 1S COPYRIGHT U N P U B L 1S H E D . 19 RELEASED BY AMP 1N C O R P O R A T E D . FOR ALL PUBLICATION RIGHTS ,19 LOC REV IS IONS DIST RESERVED. D E S C R I P T IO N R E V I S E P E R ECR- -0 1 5 3 7 7 DK 3 JUL2006 UN I V E R S A L H E A T C U R E B L O C K
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3JUL2006
09MAY94
OVEN
ATE ESP
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MP1470
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR DESCRIPTION REVISED NTERLOCKING DWN DATE PER 0G3B - 0 3 2 6 - 0 I . 4 JUL200 I APVD EZ FEATURE 2 M M ~TT
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JUL200
24JUL2001
24JUL2001
MP1470
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Untitled
Abstract: No abstract text available
Text: Jul2003 resTsi Il's9 '01 U' 0> OOOOOÔÔOOOOOOOOOOOOOOOOOÔ ooooooooooooooooooooooooo OOOOOOOOOOOOOOOOOOOOOOOOO 00 00 00 00 00 009000000000000 ooooooooooooooooooooooooo ooooooooooooooooooooooooo 000000 ! I 000000 OOOOOO OOOOOO OOOOOO OOOOOO OOOOOO & -1- o e o e w :
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RTZ51ooooooooo
RTZ51
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Untitled
Abstract: No abstract text available
Text: TH I S D R AW I NG IS UNPUBLI SHED. C O P Y R I G H T 20 RELEASED BY TYCO ELE CTRONICS CORPORATION F OR ALL 20 PUBLICATION RIGHTS LOC D I ST R E V LTR IO N S DESCRIPTION Al & RELEASED I2 N O V 2 00 7 S. REVISED 0 9 JUL2008 s. REVISED 0 I OC T 2 0 0 9 T.S
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JUL2008
NOV20
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PBT GF 10
Abstract: joint interfacial PBT GF
Text: THIS DR AWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 20 L OC 0.2 0.2 <> AI-A2 D=-<] 6.05 — 6.05 / E R 0 0 -0089 -04 o i JUL2004 T . Gr J . Dr Ajout cotes manquantes 13JUN2005 P.CS J . Dr
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JUL2004
13JUN2005
25JAN2006
3IMAR2000
PBT GF 10
joint interfacial
PBT GF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR REVISED INTERLOCKING _n_ M DWN DATE DESCRIPTION PER 0G3B - 0 3 2 6 - 0 I APVD EZ . 4 JUL200 I FEATURE
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4JUL200I
94-V0,
24JUL2001
24JUL2001
24JUL
3IMAR2000
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Untitled
Abstract: No abstract text available
Text: 0O.92±O.O8 15.00 <> AMP LOGO i o o ♦ C D < L 02.3±O.O8 V C M m _ 2 0 0 .1 0 I— li o -H o O O» 00 I LT t I P.C.B EDGE C 12.50 3.50 o o O m o _ l CM _ l CL CL o C\j CM m RECOMMENDED PCB LAYOUT 1.00 2.80 TYP i L 1 U- 1 C\l □ 1 1 NOTE: _ _ □
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 2005 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S 2005 L OC RESERVED. D I ST R E V I S I ON S A LTR DESCRIPTION DWN DATE APVD DRWG. revised JUL2005 KS BF ECR-05-007702 13DEC 2005
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ECR-05-007702
22JUL2005
13DEC
725640mit
JUL2005
18JUL2005
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