SGP20N60HS
Abstract: SGW20N60HS SKP20N60HS SKW20N60HS IGBT FF 450
Text: SKP20N60HS SKW20N60HS Preliminary High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:
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SKP20N60HS
SKW20N60HS
P-TO-220-3-1
O-220AB)
P-TO-247-3-1
O-247AC)
SGP20N60HS
O220AB
Q67040-S4498
SGW20N60HS
SGP20N60HS
SGW20N60HS
SKP20N60HS
SKW20N60HS
IGBT FF 450
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Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
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BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
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BBY56-03W
Abstract: No abstract text available
Text: BBY56-03W Silicon Tuning Diode 2 • Excellent linearity 1 • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread VPS05176 Type
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BBY56-03W
VPS05176
OD323
Jul-02-2001
BBY56-03W
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BC847PN SOT363
Abstract: VPS05604 BC847PN Marking 1ps sot
Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation
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BC847PN
VPS05604
OT-363
EHA07193
EHA07177
OT363
EHP00365
EHP00364
EHP00368
BC847PN SOT363
VPS05604
BC847PN
Marking 1ps sot
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BUP314
Abstract: Q67040-S4517 bup314 equivalent IGW25T120
Text: IGW25T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP314 Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply
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IGW25T120
BUP314
P-TO-24nformation
Jul-02
BUP314
Q67040-S4517
bup314 equivalent
IGW25T120
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IKW08T120
Abstract: BUP305D
Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs
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IKW08T120
BUP305D
Jul-02
IKW08T120
BUP305D
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Q67040-S4230
Abstract: Q67040-S4231 Q67040-S4340 SKA06N60 SKB06N60 SKP06N60
Text: SKP06N60, SKB06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:
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SKP06N60,
SKB06N60
SKA06N60
P-TO-220-3-1
P-TO-263-3-2
O-220AB)
O-263AB)
O-220,
SKP06N60
Jul-02
Q67040-S4230
Q67040-S4231
Q67040-S4340
SKA06N60
SKB06N60
SKP06N60
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Q67040-S4215
Abstract: SKB02N60 SKP02N60
Text: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
SKB02N60
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
O-263AB)
Jul-02
Q67040-S4215
SKB02N60
SKP02N60
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SKW07N120
Abstract: inverter 4v to 12v infineon igbt 1200v 600A
Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
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SKW07N120
40lower
P-TO-247-3-1
O-247AC)
O-247AC
Q67040-S4280
Jul-02
SKW07N120
inverter 4v to 12v
infineon igbt 1200v 600A
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Q62702-A1028
Abstract: No abstract text available
Text: BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration Package BAT 62-02W L 1=C SCD-80
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2-02W
VES05991
SCD-80
Q62702-A1028
Jul-02-1998
Q62702-A1028
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Untitled
Abstract: No abstract text available
Text: SMBTA06U NPN Silicon AF Transistor Array • High breakdown voltage 5 4 6 • Low collector-emitter saturation voltage • Complementary type: SMBTA56U PNP 3 • Two ( galvanic) internal isolated Transistors 2 with good matching in one package 1 VPW09197
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SMBTA06U
SMBTA56U
VPW09197
EHA07178
EHP00819
EHP00821
EHP00815
Jul-02-2001
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RG81
Abstract: IGW08T120 BUP305D
Text: IGW08T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply
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IGW08T120
BUP305D
P-TO-24nformation
Jul-02
RG81
IGW08T120
BUP305D
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tcxo philips 4322
Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
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SGP15N120
Abstract: SGW15N120 Q67040-S4274 Q67040-S4275 Q67040-S4276 SGB15N120
Text: SGP15N120 SGP15N120 SGW15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
P-TO-247-3-1
O-263AB)
O-247AC)
O-220AB
SGP15N120
SGW15N120
Q67040-S4274
Q67040-S4275
Q67040-S4276
SGB15N120
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G2004
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T $ LOC AD RESERVED. REV IS IO N S D I ST 00 LTR DE SC R I P T I O N D WN DATE APVD REV PER OG3C 12 JUL02 RB JO REV RER OG3C-0039-03 16 JUNO3
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I00II00I
S010010g
/I00II00IIII000Imm
OG3C-0223-02
0G3C-03I3-04
2JIJL02
6JIJN03
G2004
02JUN2000
5JAN200
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tyco 17105-3608
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R 1G H T S 20 LOC RESERVED. ES R E V ISIONS DIST 00 LTR DESCRIPTION REVISED A5 4.5 REF <i i o o o r— -0- -e— o o o — — -
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250CT2010
08JAN03
3IMAR2000
tyco 17105-3608
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Untitled
Abstract: No abstract text available
Text: 4 DR AW ING THIS MADE DRAWI NG 0 IN IS 3 T H IR D ANGLE UNPUBLI SHED. COPYRIGHT 19 RELEASED BY ANP FOR P U B L I C A T I O N INCORPORATED. ALL 2 <3> P R O JE C TIO N INTERNATIONAL RIGHTS DI ST LOC ,19 FT RESERVED. 4 REV I 5 I 0 N 5 P F ZONE LTR D E S C R I P T I ON
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28N0V01
10JUN02
JUL-02
amp22095
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Untitled
Abstract: No abstract text available
Text: I i 3 0 -JUL-02 15:06:30 amp 1641¿/home/amp!6412/docmod REVI SI ONS DI ST LÛC DF CO P H THE TIP .025 2-¿0 THE DIAMETER PARTS ANP, OF TO PART MARKED ON BE CONTACT TROE POSTS POSITION ASSEMBLED BY NONBE R AND EITHER SIDE. WILL OF A NP DATE FALL EACH D E S C R IP T IO N
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JUL-02
6412/docmod
0G3D-0276-01
i30-JUL-02
ampi641Â
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Untitled
Abstract: No abstract text available
Text: 8 T H I S DRAWING C C OPYRIGHT 7 I S U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. 6 5 ,19 ALL R IG H T S R ES E R V E D . -A A AMP 4 8 0 5 REV 1 0 / 9 3 i 3 0 - JUL-02 15:11:33 amp 1641¿/home/amp!6 4 1 2/docmod
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JUL-02
P05T5
0G3D-0276-01
2/home/amp16
pi641Â
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Untitled
Abstract: No abstract text available
Text: 7 THIS JÊL DRAWING IS C O P Y R IG H T 19 U N P U B L IS H E D . RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S 4 5 6 3 2 ïïT s t LOG , 19 R ES ER V ED . REVISIONS CO DF DESCRIPTION N THE TIP .025 WHEN FULLY SEATED FORWARD AMR, D 235 MAX
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0G3D-0276-01
JUL-02
home/ampl6412/docmod
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vhdl code for manchester decoder
Abstract: easy examples of vhdl program vhdl code manchester encoder vhdl manchester vhdl code for accumulator Verilog implementation of a Manchester Encoder/Decoder
Text: Application note Philips Semiconductors VHDL Easy Design Flow for Philips AN078 INTRODUCTION This note provides the steps for using MINC<1 VHDL Easy and Philips Semiconductor’s XPLA Designer tools to compile a digital design into Philips’ Complex Programmable Logic Devices
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AN078
vhdl code for manchester decoder
easy examples of vhdl program
vhdl code manchester encoder
vhdl manchester
vhdl code for accumulator
Verilog implementation of a Manchester Encoder/Decoder
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Untitled
Abstract: No abstract text available
Text: 7 TH 5 DRAWING C O P Y R IG H T IS 19 U N P U B L IS H E D . R ELE A S E D BY AMP IN C O R PO R A T E D . ALL FOR P U B L IC A T IO N R IG H T S 6 5 ,1 9 RESERVED . D C . 1 00 TYP A AMP 4805 REV 1 0/93 I 3 0 -JUL-02 15:16:54 amp 1641¿/home/amp!6412/docmod
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-JUL-02
6412/docmod
0G3D-0276-01
P05T5
JUL-02
pi641
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Untitled
Abstract: No abstract text available
Text: 8 THIS C DRAWING IS C O P Y R IG H T 19 7 U N P U B L IS H E D . RELEASED BY AMP A AMP i 3 0 - JUL-02 4805 REV 10/93 15:15:03 amp 1641¿/home/amp!6 4 1 2/docmod IN CO RP O RA TE D. ALL FOR PUBLICATION R IG H T S R ES ER V ED . ,19 6 5 4 2 3 DI ST LOG REVISIONS
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JUL-02
P05T5
0G3D-0276-01
pi641Â
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1EN61-6
Abstract: MIL-W-5088 MS25081C6 1EN61 FAA-PMA 010of MIL-PRF-8805 MS25081-c6
Text: FO-55 _±_ RE V 32 HONEYWELL PART NUMBER I E N6 DOCUMENT C H A N G E D BY 0011000 KR CHECK 07FEB05 AK F A A - P MA NOTES - CORROSION R ES IS T A N T STEEL ENCLOSURE 2 - SW ITCH S E A LE D PER M I L - R R F - 8 8 0 5 SYMBOL 4 3 - C I R C U I T D I A G R A M , C A T A L O G L I S T I N G , F E D . MFG. CODE ,
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FO-55I
07FEB05
MlL-W-81044/9
MIL-W-5088
MIL-PRF-8805
09JUL02
1EN61-6
1EN61-6
MIL-W-5088
MS25081C6
1EN61
FAA-PMA
010of
MS25081-c6
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