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    SKB06N60 Search Results

    SKB06N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKB06N60 Infineon Technologies 6A 600V TO263AB SMD IGBT+Diode Original PDF
    SKB06N60 Infineon Technologies Fast IGBT in NPT-Technology with Soft, Fast Recovery Anti-Parallel EmCon Diode Original PDF
    SKB06N60ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 12A 68W TO263-3-2 Original PDF
    SKB06N60HS Infineon Technologies 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon diode in only one package. Original PDF
    SKB06N60HSATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 12A 68W TO263-3 Original PDF

    SKB06N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K06N60

    Abstract: PG-TO-263-3-2 SKB06N60
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


    Original
    PDF SKB06N60 PG-TO-263-ain K06N60 PG-TO-263-3-2 SKB06N60

    Q67040-S4230

    Abstract: Q67040-S4231 Q67040-S4340 SKA06N60 SKB06N60 SKP06N60
    Text: SKP06N60, SKB06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original
    PDF SKP06N60, SKB06N60 SKA06N60 P-TO-220-3-1 P-TO-263-3-2 O-220AB) O-263AB) O-220, SKP06N60 Jul-02 Q67040-S4230 Q67040-S4231 Q67040-S4340 SKA06N60 SKB06N60 SKP06N60

    Q67040-S4230

    Abstract: SKP06N60 25E-4 Q67040-S4231 SKB06N60 mar 716
    Text: SKP06N60 SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    PDF SKP06N60 SKB06N60 O-220AB Q67040-S4230 O-263AB Q67040-S4231 Mar-00 Q67040-S4230 SKP06N60 25E-4 Q67040-S4231 SKB06N60 mar 716

    SKB06N60

    Abstract: 25E-4 Q67040-S4230 Q67040-S4231 SKP06N60
    Text: SKP06N60 Preliminary SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original
    PDF SKP06N60 SKB06N60 O-220AB Q67040-S4230 O-263AB Q67040-S4231 Aug-99 SKB06N60 25E-4 Q67040-S4230 Q67040-S4231 SKP06N60

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS O-263AB Q67040-S4544 P-TO-263-3-2 O-263AB) SKB06N60HS Aug-02

    K06N60

    Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS PG-TO-263-3-2 K06N60HS K06N60 k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS

    Untitled

    Abstract: No abstract text available
    Text: SIGC07T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SKB06N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC07T60UN


    Original
    PDF SIGC07T60UN SKB06N60HS Q67050-A4220A101 7212U,

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,


    Original
    PDF SKB06N60

    K06N60

    Abstract: TO220 package infineon K06N60 SMD
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter


    Original
    PDF SKB06N60 O-220, SKB06N60 K06N60 TO220 package infineon K06N60 SMD

    K06N60

    Abstract: No abstract text available
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter


    Original
    PDF SKB06N60 O-220, SKB06N60 K06N60

    SIGC07T60UN

    Abstract: SKB06N60HS
    Text: SIGC07T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SKB06N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC07T60UN


    Original
    PDF SIGC07T60UN SKB06N60HS Q67050-A4220A101 7212U, SIGC07T60UN SKB06N60HS

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS K06N60HS P-TO-263-3-2 Q67040S4544 P-TO-263-3-2 O-263AB) SKB06N60HS

    K06N60

    Abstract: No abstract text available
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS K06N60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation G E • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:


    Original
    PDF SKB06N60HS O-263AB Q67040-S4544 Jun-02

    Untitled

    Abstract: No abstract text available
    Text: SKP06N60 SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    PDF SKP06N60 SKB06N60 SKB06N60 O-220AB O-263AB Q67040-S4230 Q67040-S4231 Dec-01

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    Common rail injector driver

    Abstract: k792 k792 datasheet transistor Common rail injector Technical data 4267G diesel engine ic 812 smd "capacitive pressure sensor" common rail diesel pump capacitive pressure sensor
    Text: Product Brief KP125 Integrated Pressure Sensor IC for Barometric Air Pressure Measurement PG-DSOF-8-12 Applications The barometric air pressure BAP is an important parameter to compute the air-fuel ratio provided to the engine and for controlling spark advance to optimise engine efficiency. In automotive


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    PDF KP125 PG-DSOF-8-12 KP125 B138-H8612-X-X-7600 Common rail injector driver k792 k792 datasheet transistor Common rail injector Technical data 4267G diesel engine ic 812 smd "capacitive pressure sensor" common rail diesel pump capacitive pressure sensor

    TLE 5025

    Abstract: automatic brake failure indicator and engine heating alarm radar 77 ghz tda 7718 Bosch radar bosch injectors bosch throttle position bosch fuel pressure sensor bosch alternator bosch hall ignition
    Text: Driving the Future of Automotive Electronics Automotive system solutions [ www.infineon.com/automotive ] 2 2 Contents Challenges and Trends 4 Safety System Solutions 6 Body & Convenience System Solutions 12 Powertrain System Solutions 18 Electrified Powertrain System Solutions


    Original
    PDF of048 B112-H9279-X-X-7600 TLE 5025 automatic brake failure indicator and engine heating alarm radar 77 ghz tda 7718 Bosch radar bosch injectors bosch throttle position bosch fuel pressure sensor bosch alternator bosch hall ignition

    K06N60

    Abstract: No abstract text available
    Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter


    Original
    PDF SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, SKA06N60 K06N60

    K06N60

    Abstract: SKA06N60 K06N60 TO-220F infineon IGBT 1000V .100A IGBT 0835 SKP06N60
    Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter


    Original
    PDF SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, SKA06N60 K06N60 K06N60 TO-220F infineon IGBT 1000V .100A IGBT 0835

    Q62705K352

    Abstract: 4267G "injector driver" PRESSURE SENSOR IC EGR Valve Position Sensor capacitive pressure sensor 6230-GP injector diesel C167 C505
    Text: P R O D U C T B R I E F Integrated Pressure Sensor IC for Barometric Air Pressure Measurement Application Features The manifold air pressure MAP and barometric air pressure (BAP) are important parameters to compute the air-fuel ratio provided to the engine


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    PDF B112-H7866-X-X-7600 Q62705K352 4267G "injector driver" PRESSURE SENSOR IC EGR Valve Position Sensor capacitive pressure sensor 6230-GP injector diesel C167 C505

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    K06N60

    Abstract: diode 6A 600v
    Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter


    Original
    PDF SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, SKA06N60 K06N60 diode 6A 600v