Si1407DL
Abstract: No abstract text available
Text: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1407DL
18-Jul-08
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Si1417DH
Abstract: No abstract text available
Text: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1417DH
18-Jul-08
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Si1413DH
Abstract: No abstract text available
Text: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1413DH
18-Jul-08
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Si1426DH
Abstract: No abstract text available
Text: SPICE Device Model Si1426DH Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1426DH
18-Jul-08
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Si1305DL
Abstract: No abstract text available
Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1305DL
18-Jul-08
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Si1400DL SPICE Device Model
Abstract: Si1400DL
Text: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1400DL
S-50151Rev.
07-Feb-05
Si1400DL SPICE Device Model
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Si1302DL
Abstract: No abstract text available
Text: SPICE Device Model Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1302DL
S-50151Rev.
07-Feb-05
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Si1305DL
Abstract: No abstract text available
Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1305DL
S-50151Rev.
07-Feb-05
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Si1303DL
Abstract: No abstract text available
Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1303DL
S-50151Rev.
07-Feb-05
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Untitled
Abstract: No abstract text available
Text: TFDU5307 Vishay Semiconductors Fast Low Profile 2.5 mm Infrared Transceiver Module (MIR, 1.152 Mbit/s) for IrDA Applications Description The TFDU5307 is an infrared transceiver module compliant to the latest IrDA physical layer standard, supporting IrDA speeds up to 1.152 Mbit/s (MIR) and
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TFDU5307
TFDU5307
08-Apr-05
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MCS 0402 AT - Precision
Abstract: MCA 1206
Text: MCS 0402, MCT 0603, MCU 0805, MCA 1206 - Precision Vishay Beyschlag Precision Flat Chip Resistors FEATURES • Approved according to EN 140401-801 • Thin-film technology • • • • Low TC: ± 10 to ± 25 ppm/K Precision tolerance of value: ± 0.1 and ± 0.25 %
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07-Feb-05
MCS 0402 AT - Precision
MCA 1206
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Si1406DH
Abstract: No abstract text available
Text: SPICE Device Model Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1406DH
18-Jul-08
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Si1039X
Abstract: No abstract text available
Text: SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1039X
18-Jul-08
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Si1400DL
Abstract: No abstract text available
Text: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1400DL
18-Jul-08
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2N7002E
Abstract: No abstract text available
Text: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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2N7002E
18-Jul-08
2N7002E
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Si1413DH
Abstract: No abstract text available
Text: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1413DH
S-50151Rev.
07-Feb-05
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Si1417DH
Abstract: No abstract text available
Text: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si1417DH
S-50151Rev.
07-Feb-05
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Untitled
Abstract: No abstract text available
Text: TFDU5307 Vishay Semiconductors Fast Low Profile 2.5 mm Infrared Transceiver Module (MIR, 1.152 Mbit/s) for IrDA Applications Description The TFDU5307 is an infrared transceiver module compliant to the latest IrDA physical layer standard, supporting IrDA speeds up to 1.152 Mbit/s (MIR) and
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TFDU5307
TFDU5307
D-74025
07-Feb-05
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71500
Abstract: Si1405DL
Text: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1405DL
18-Jul-08
71500
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1EN61-6
Abstract: MIL-W-5088 MS25081C6 1EN61 FAA-PMA 010of MIL-PRF-8805 MS25081-c6
Text: FO-55 _±_ RE V 32 HONEYWELL PART NUMBER I E N6 DOCUMENT C H A N G E D BY 0011000 KR CHECK 07FEB05 AK F A A - P MA NOTES - CORROSION R ES IS T A N T STEEL ENCLOSURE 2 - SW ITCH S E A LE D PER M I L - R R F - 8 8 0 5 SYMBOL 4 3 - C I R C U I T D I A G R A M , C A T A L O G L I S T I N G , F E D . MFG. CODE ,
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FO-55I
07FEB05
MlL-W-81044/9
MIL-W-5088
MIL-PRF-8805
09JUL02
1EN61-6
1EN61-6
MIL-W-5088
MS25081C6
1EN61
FAA-PMA
010of
MS25081-c6
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HD-20
Abstract: 5747840-6 sh 94v-0 TYCO ELECTRONICS 5747840-6
Text: n 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - n 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC GP ALL RIGHTS RESERVED. DIST REVISIONS 00 LTR DATE DWN APVD 07FEB05 JG SB DESCRIPTION RELEASED PER EC 0S 13 - 0 6 7 1 - 0 4 30.81+0.38 [1 .21 3 + .01 5]
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0S13-0671-04
07FEB05
HD-20
31MAR2000
5747840-6
sh 94v-0
TYCO ELECTRONICS 5747840-6
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - LOC ALL RIGHTS RESERVED. AJ DIST REVISIONS 17 LTR C DESCRIPTION REVISED PER EC O S 1 4 - 0 4 7 4 - 0 4 DATE DWN APVD 07FEB05 BM JL ZINC PER Q Q - Z - 3 6 3 .
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07FEB05
03JUL96
08JUL96
31MAR2000
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TYCO ELECTRONICS 5747840-6
Abstract: HD-20
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR A REVISED PER DESCRIPTION DATE DWN EC 0-06-028339 3 /J A N /0 7 APVD ZMR EDB SO. 81 ±0.38 1 .21 3 + .01 5;
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EC0-06-028339
3/JAN/07
07FEB05
HD-20
31MAR2000
TYCO ELECTRONICS 5747840-6
HD-20
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT D 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ALL RIGHTS RESERVED. IDENTIFICATION N U M B ER 10 FOR MAGNET WIRE RANGE C 0 .5 0 8 + 0 .0 2 5 [. 020 + . 00 1] 16.00 [.6 3 0 ] 3 .8 1 [.1 5 0 ] l= Ç\
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31MAR2000
A-0067-05
07FEB05
O7FE02OO5
07FEB2005
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