sot23 code JM
Abstract: TRANSISTOR SOT-23 marking JE JE SOT23 SOT23 JM DTA123 SOT23 JE
Text: DTA123 JM/JE/JUA/JCA/JSA PNP Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
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DTA123
OT-723
OT-523
OT-323
OT-23
O-92S
sot23 code JM
TRANSISTOR SOT-23 marking JE
JE SOT23
SOT23 JM
SOT23 JE
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Untitled
Abstract: No abstract text available
Text: DTA123 JM/JE/JUA/JCA/JSA PNP Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
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DTA123
OT-723
OT-523
31TYP
O-92S
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Untitled
Abstract: No abstract text available
Text: DTA123 JM/JE/JUA/JCA/JSA PNP Small Signal Transistor Small Signal Product Features Equivalent Circuit ◇ Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ◇ The bias resistors consist of thin -film resistors with
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DTA123
OT-523
OT-723
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Untitled
Abstract: No abstract text available
Text: SIDACtor Protection Thyristors Broadband Optimized Protection SDP Biased Series - SOT23-6 RoHS Description 5IJTOFX4%1#JBTFETFSJFTQSPWJEFTPWFSWPMUBHF QSPUFDUJPOGPSBQQMJDBUJPOTTVDIBT7%4- "%4- BOE"%4- XJUINJOJNBMFGGFDUPOEBUBTJHOBMT5IJT
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OT23-6
30MHz)
100nA
180mm
OT-23
EIA-481
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e304 fet
Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092
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BF256B
BF256LB
2SK121
ESM4092
MFE2005
MPF4416
UC2149
2N4978
PN4304
e304 fet
2SK581
Siliconix E304
MPF4860
TP5950
InterFET
bf256s
PN4222
U199
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION All information in this data sheet is preliminary AM AM and subject to change. X F JM y% éF • l / j A I / r l +3V/+5V, High-Speed, Rail-to-Rail, SOT23 Comparators with Shutdown Features ♦ Ultra-Fast 5ns Propagation Delay 5mV overdrive
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MAX997/MAX999
MAX997ESA
AX997EUT-T
AX999EUK-T
OT23-6
OT23-5
OT23-6
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sst310
Abstract: SST309 PART MARKING Z08 MARKING marking z08 Z08 SOT 5
Text: fTT*Siliconix SST308 SERIES N-Channel JFETs Jm W incorporated The SST308 Series is the surface mount equivalent of our popular J308 Series. It features high-gain > 8000 jxS , low noise (typically < 6nWHz) and low gate leakage (typically < 2 pA). Of special interest,
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SST308
SST309
SST310
OT-23
sst310
SST309 PART MARKING
Z08 MARKING
marking z08
Z08 SOT 5
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Untitled
Abstract: No abstract text available
Text: KSR2101 FNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, >4.7, R jM T H l) • Complement to KSR 1101 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t)
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KSR2101
OT-23
TA-25T;
-100M,
-10mA
-10mA,
-100/iA
-20mA
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Teledyne Semiconductor
Abstract: CDG201CJ
Text: añE D. TELEDYNE COMPONENTS • jm?boa aaahai3 a ■ r^ S H f CDG201 SEM ICONDUCTOR QUAD MONOLITHIC SPST CMOS/D-MOS ANALOG SWITCH ORDERING INFORMATION Quad SPST, Logic ‘O’ ON Break-Before-Make Commercial Temp* Range Industrial Temp. Range 16-Pln Ceramic DIP
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16-Pln
CDG201CJ
CDG201BJ
CDG201
CDG201BK
CDG201AK
10MHz
100MHz
Teledyne Semiconductor
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2n5114 "sot23"
Abstract: No abstract text available
Text: 2N5114 SERIES P-Channel JFETs C T 'S iliconix Jm The 2N5114 Series are p-channel JFET analog switches designed to complement our rvchannel 2N4091 Series. They feature low on-resistance and good off-isolation as well as the fast switching associated with JFETs. They are housed in TO-18
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2N5114
2N4091
2N5115
2N5116
OT-23,
SST174
2n5114 "sot23"
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ad 303 transistor
Abstract: ad1586 Branding KX AD marking 9l sot-23
Text: ANALOG DEVICES 2.5 Vto 5.0 VMcropcwer, Redsion Shunt MxJe\ätage inferences 3 Æ 1586/7/8'9 P FE JM IW T H -NCÛL II^FMMICN FEATURES Shunt Reference 2.5V, 3V, 4.096V, 5V) Initial Accuracy: + /- 0.1% max Tem perature Drift: + /- 50 p pm /°C max W ide Operating Range : 50|xA to 10mA
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10kHz)
OT-23
AD1586/7/8/9
100MA
ad 303 transistor
ad1586
Branding KX AD
marking 9l sot-23
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2N4338
Abstract: 2N4340 equivalent
Text: ITSiicanix Jm B in c o r p o r a te d The 2N4338 Series of n-channel JFETs is designed for sensitive amplifier stages at low to mid frequencies. It features low cut-off voltages to accommodate low-level power supplies and low leakage for improved system accuracy. The 2N4338 and 2N4339 are ideal for low
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2N4338
2N4339
2N4340
2N4341
2N4340 equivalent
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Untitled
Abstract: No abstract text available
Text: TELEDYNE COMPONENTS ' - 5äE D • AW bOE - ■ »— ■ ■■ GGQti3flO t . J « 7‘ - 3 i ''2 . r ' IT m jm m fZ SD 2 0 4 , SD 2 0 5 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted. Chip* in Waffle Pack TÛ-205AF TO-39 Package
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-205AF
SD204CHP
SD204HD
SD205CHP
SD205HD
OT-143)
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MAX2662
Abstract: sot23 jt Maximinte Sot23-6
Text: ADVANCE INFORMATION All information in this data sheet is preliminary JM Æ W M Æ M J^Æ Æ W M and subject to change. Low-Noise, 2.5G H z U pconverter M ix e r _General Description The MAX2662 is a low-cost, low-noise upconverter designed for low-voltage operation. Ideal for batterypowered applications, this device operates with IF input
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MAX2662
10MHz
500MHz,
NEC8106/NEC8109
MAX2662EUT-T
OT23-6
MAX2662
sot23 jt
Maximinte
Sot23-6
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VPDS06
Abstract: TP0610T
Text: SI LI CO NI X INC IfiE D Ö25473 5 0014051 C X S ilic o n ix TP0610 SERIES Jm W in c o r p o r a te d P-Channel Enhancement-Mode MOS Transistors T '- 3 ~ 7 - - Z 5 ' PRODUCT SUMMARY PART NUMBER BOTTOM VIEW TO-92 V BR DSS fDS(ON) (V) (« } T Id (A) PACKAGE
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TP0610
TP0610E
O-206AC
TP0610L
TP0610T
OT-23
VPDS06
OT-23
VPDS06
TP0610T
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csi 93c46
Abstract: LC502 20pmt04a IC565 ycl 20PMT04A
Text: - l 3 VER: 0 . 1 _ K ^ v J !U 334280110 F OR Q U IC K S T A R T M O D E 50 0M H z 45 0M H z 40 0M H z VC C C U f' STt*v . Ü R237 R34 10K 10K = ^ S 'JM P ,. 13 - X J2 _ _ _ -< < rC s D *‘ “r i i - siz e D o c u m e n t Numbe> C PU _A 1 60V 1 60V 1 35 V
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20PMT04A
N2907
2N7002
csi 93c46
LC502
IC565
ycl 20PMT04A
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SOT173
Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
Text: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied
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0G32Slb
X3A-BFR520
BFR520
BFG520
OT143)
BFP520
OT173)
X3A-BFR520
URV-3-5-52/733
SOT173
BFR520 transistor
BFG520
BFP520
BFR520
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BFR90A
Abstract: crystal PHILIPS BFQ53 BFR92A X3A-BFR90A
Text: Philips Semiconductors APX bbS3T31 DD3SE1S lôô Product specification NPN 5 GHz wideband transistor X3A-BFR90A crystal bTE » N A PER PHILIPS/DISCRETE MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFR90A SOT37 , BFQ53 (TO-72) and BFR92A (SOT23). Crystals are supplied as whole
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bbS3T31
X3A-BFR90A
BFR90A
BFQ53
BFR92A
X3A-BFR90A
URV-3-5-52/733
BFR90A
crystal PHILIPS
BFQ53
BFR92A
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SIUCON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -¡u n e 1996_ O _ PAR TM ARKING DETAILS BC817 -6 D Z BC818 - 6HZ B C 8 1 7 -1 6 -6 A Z BC818-16 - 6EZ BC817-25 - 6BZ BC818-25 - 6FZ BC817-40 - 6CZ BC818-40 - 6GZ C O M PLEM ENTAR Y TYPES
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BC817
BC818
BC817-25
BC817-40
BC807
BC808
BC818-16
BC818-25
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Untitled
Abstract: No abstract text available
Text: ALPHA K K I I SEM ICONDUCTO R AS4041 Excellence in Analog Power Products Precision Micropower Shunt Voltage Reference FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • Low temperature coefficient ,50 ppm/°C Operating current range .50|iA to 5mA
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AS4041
LM4041
AS4041
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TK75001U
Abstract: TK75003U TK75002U TK1120 T0-92N TK75050U
Text: INTEGRATED CIRCUITS T O K O 36 if • • • • • TK113DDM • • • • Low dropout local voltage regulator, small surface mounting type, high stability output voltage ± 2.4% or 80mV , output ON/OFF control terminal (high-level ON), very low quiescent current (at OFF mode),
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TK112COAM
or80mV)
OT89-5
TK75050D
TK75050U
TK83854D/DI
TK83854D/DI
DIP16
TK75001U
TK75003U
TK75002U
TK1120
T0-92N
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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x4202
Abstract: ns 4203 AX4202 X4202 s 4200E
Text: >kiyixi>ki 19-1338; Rev 1; 10/98 U l t r a - H i g h - S p e e d , L o w -Noi se, Low -Pow er, S O T 2 3 O p e n - L o o p Buf f er s _ F e a t u r e s ♦ 2.2mA Supply Current The MAX4200-MAX4205 use a proprietary architecture to achieve up to 780M H z -3dB b a n d w id th , 280M H z
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780MHz
MAX4201/MAX4202)
280MHz
MAX4200/MAX4203)
AX4200-M
AX4205
x4202
ns 4203
AX4202
X4202 s
4200E
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T0252
Abstract: SOT-23-8 SC59 SC74 SC74A SC75 SC75A SC88A
Text: Roth Elektronik GmbH 55595 Roxheim Hauptstrasse 93 Germany phone +49 0 671 31872 fax +49 (0) 671 30496 SOT 23 SMD Multiadapter Stock-No. RE 901 - Multiadapter circuit board with six micro-miniature semiconductor circuits - The PCB can be equipped with twenty different types of semiconductors listet
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T0252
OT223
SC74A
OT23-5,
OT23-6
OT23-8
SC88A,
SC75A
T0252
SOT-23-8
SC59
SC74
SC75
SC75A
SC88A
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