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    JEDEC-JESD22-C101 CLASS C2 Search Results

    JEDEC-JESD22-C101 CLASS C2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC10125L Rochester Electronics LLC Replacement for On Semiconductor part number MC10125L. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    MC10105P Rochester Electronics LLC OR/NOR Gate, 10K Series, 3-Func, 3-Input, ECL, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    MC10125P Rochester Electronics LLC ECL to TTL Translator, 4 Func, True Output, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    MC10116FNR2 Rochester Electronics LLC Replacement for On Semiconductor part number MC10116FN. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    MC10131P Rochester Electronics LLC D Flip-Flop, 10K Series, 2-Func, Positive Edge Triggered, 1-Bit, Complementary Output, ECL, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy

    JEDEC-JESD22-C101 CLASS C2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12065A104JAT2A

    Abstract: 12065A103JAT2A RF Product Device Data
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • • Power Gain: 27.5 dB Typ @ f = 2450 MHz, Class AB


    Original     		PDF MMG2401R2 MMG2401R2 12065A104JAT2A 12065A103JAT2A RF Product Device Data

    Untitled

    Abstract: No abstract text available
    Text: NCP436, NCP437 3A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP436 and NCP437are very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with PMOS


    Original     		PDF NCP436, NCP437 NCP436 NCP437are 567FH NCP436/D

    Untitled

    Abstract: No abstract text available
    Text: NCP436, NCP437 3A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP436 and NCP437 are very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with PMOS


    Original     		PDF NCP436, NCP437 NCP436 NCP437 NCP436/D

    Untitled

    Abstract: No abstract text available
    Text: NCP451 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS


    Original     		PDF NCP451 NCP451 517CE NCP451/D

    Untitled

    Abstract: No abstract text available
    Text: NCP451 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS


    Original     		PDF NCP451 NCP451 517CE NCP451/D

    Untitled

    Abstract: No abstract text available
    Text: NCP451 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS


    Original     		PDF NCP451 NCP451 517CE NCP451/D

    ML200M

    Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original     		PDF MMG2401 MMG2401NR2 ML200M F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A

    Schematics 5250

    Abstract: schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier Designed for 802.11a applications with frequencies from 4900 to 5900 MHz. • 23 dBm P1dB CW @ 5.25 GHz


    Original     		PDF MMG5004N MMG5004NR2 Schematics 5250 schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22

    12065A104JAT2A

    Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original     		PDF MMG2401 MMG2401NR2 12065A104JAT2A 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2

    12065A104JAT2A

    Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
    Text: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •


    Original     		PDF MMG2401 MMG2401R2 12065A104JAT2A F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E

    F35V

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original     		PDF MMG2401 MMG2401NR2 12065A104JAT2A

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original     		PDF MMG2401 MMG2401NR2 MMG2401 12065A104JAT2A

    Untitled

    Abstract: No abstract text available
    Text: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:


    Original     		PDF STG4160 100mA IEC-61000-4-2 JESD22 A114-B

    STG4160

    Abstract: IEC-61000-4-2 JESD22 A115-A C101
    Text: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:


    Original     		PDF STG4160 100mA IEC-61000-4-2 JESD22 A114-B STG4160 A115-A C101

    Untitled

    Abstract: No abstract text available
    Text: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:


    Original     		PDF STG4160 100mA IEC-61000-4-2 JESD22 A114-B

    Untitled

    Abstract: No abstract text available
    Text: NCP451 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, due to a current consumption optimization with NMOS


    Original     		PDF NCP451 NCP451 499BR 567KB NCP451/D

    MRF5S9070N

    Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070N 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR

    ATC100B2R0BT500X

    Abstract: atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9170N MRF8S9170NR3 ATC100B2R0BT500X atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB

    J1112

    Abstract: transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 1, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF7S19120N MRF7S19120NR1 J1112 transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1

    mosfet j172

    Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 Will be replaced by MHVIC2114NR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MHVIC2114R2 RF LDMOS Wideband Integrated


    Original     		PDF MHVIC2114NR2 MHVIC2114R2

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1

    MRF6V10010

    Abstract: MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 2, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010 MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101