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Rochester Electronics LLC MRF7S19120NR1 RF MOSFET LDMOS 28V TO270-4
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DigiKey	MRF7S19120NR1	Bulk	110		5	1 - 10 $68.05 100 $68.05 1000 $68.05 10000 $68.05	Buy Now
NXP Semiconductors MRF7S19120NR1 RF MOSFET LDMOS 28V TO270-4
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DigiKey	MRF7S19120NR1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	MRF7S19120NR1	Reel		4 Weeks	6	1 - 10 $65.954 100 $61.7141 1000 $58.4164 10000 $58.4164	Buy Now
Freescale Semiconductor MRF7S19120NR1 RF L Band, N-Channel Power MOSFET, TO-270
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MRF7S19120NR1		110		1	1 $68.7 10 $68.7 100 $64.58 1000 $58.39 10000 $58.39	Buy Now

MRF7S19120NR1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MRF7S19120NR1		Freescale Semiconductor	RF Power Field Effect Transistor		Original	PDF

MRF7S19120NR1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J1112 Abstract: transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 1, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF7S19120N MRF7S19120NR1 J1112 transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1
murata process Abstract: CRCW12061001FKEA Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 3, 3/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF7S19120N MRF7S19120NR1 MRF7S19120N murata process CRCW12061001FKEA
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF7S19120N MRF7S19120NR1 -38fficers,
A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19120N MRF7S19120NR1 T491D106K035AT Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 0, 9/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be	Original	PDF	MRF7S19120N MRF7S19120NR1 A113 A114 A115 AN1955 C101 JESD22 MRF7S19120N MRF7S19120NR1 T491D106K035AT
V10513 Abstract: 250GX-0300-55-22 AN1955 C1825C103J1GAC JESD22-A113 JESD22-A114 MRF7S19120N MRF7S19120NR1 T491D106K035AT Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF7S19120N MRF7S19120NR1 84fficers, V10513 250GX-0300-55-22 AN1955 C1825C103J1GAC JESD22-A113 JESD22-A114 MRF7S19120N MRF7S19120NR1 T491D106K035AT
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
filter for GPS spice Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode Text: RF手册第14版用于高性能RF产品的应用和设计手册2010年5月恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用恩智浦RF手册令设计更简易恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率	Original	PDF	RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
MPF102 spice model Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for	Original	PDF	te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original	PDF
MRF8P9040N Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1 Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial	Original	PDF
sot-89 BV SMD TRANSISTOR MARKING CODE Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer Text: RFマニュアル第14版 RF製品用のアプリケーションおよび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ	Original	PDF	NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
circuit diagram of GSM based home automation system Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF