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    Kyocera AVX Components 12065A103JAT2A

    COMMERCIAL CHIP T101 COMMERCIAL TAPE/REEL, 7 INCH PAPER TAPE - Tape and Reel (Alt: KGM31ACG1H103JU)
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    Avnet Americas 12065A103JAT2A Reel 12 Weeks 3,000
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    Mouser Electronics 12065A103JAT2A 3,194
    • 1 $0.77
    • 10 $0.56
    • 100 $0.399
    • 1000 $0.372
    • 10000 $0.247
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    Newark 12065A103JAT2A Reel 3,000
    • 1 $0.317
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    • 1000 $0.317
    • 10000 $0.287
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    Avnet Asia 12065A103JAT2A 14 Weeks 3,000
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    Kyocera AVX Components KGM31ACG1H103JU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V .01uF C0G 1206 5 %
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    Mouser Electronics KGM31ACG1H103JU
    • 1 $0.94
    • 10 $0.474
    • 100 $0.425
    • 1000 $0.313
    • 10000 $0.244
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    12065A103JAT2A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12065A103JAT2A Kyocera AVX Components Ceramic Capacitor 10000PF 50V NP0 1206 Original PDF

    12065A103JAT2A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12065A104JAT2A

    Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
    Text: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •


    Original
    MMG2401 MMG2401R2 12065A104JAT2A F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E PDF

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original
    MMG2401 MMG2401NR2 12065A104JAT2A PDF

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original
    MMG2401 MMG2401NR2 MMG2401 12065A104JAT2A PDF

    12065A104JAT2A

    Abstract: 12065A103JAT2A RF Product Device Data
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • • Power Gain: 27.5 dB Typ @ f = 2450 MHz, Class AB


    Original
    MMG2401R2 MMG2401R2 12065A104JAT2A 12065A103JAT2A RF Product Device Data PDF

    ML200M

    Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original
    MMG2401 MMG2401NR2 ML200M F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A PDF

    12065A104JAT2A

    Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original
    MMG2401 MMG2401NR2 12065A104JAT2A 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 PDF