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    JE TRANSISTOR Search Results

    JE TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    JE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Matsushita Miniature Relay s3 12v

    Abstract: circuit diagram of laser based door opener Matsua relay 12V pc 144V DC Motor Speed Controller transistor SMD DF HAND DRYER CIRCUIT DIAGRAM SPARK quench LR26550 je1axn-dc24v-h automatic voltage stabilizer winding data
    Text: JE-X JE-X RELAYS COMPACT ECONOMICAL POWER RELAYS 22 .866 UL File No.: E43028 CSA File No.: LR26550 14 .551 18.7 .736 • Compact size - Height Max. 18.7 mm .736 inch lower than JY relay 22.5 mm (.886 inch) • High contact capacity — 5A 125 V AC • Safety-oriented between coil and contact terminals


    Original     		PDF E43028 LR26550 Matsushita Miniature Relay s3 12v circuit diagram of laser based door opener Matsua relay 12V pc 144V DC Motor Speed Controller transistor SMD DF HAND DRYER CIRCUIT DIAGRAM SPARK quench LR26550 je1axn-dc24v-h automatic voltage stabilizer winding data

    Untitled

    Abstract: No abstract text available
    Text: SM-8 DUAL NPN MEDIUM POWER ZDT651 TRANSISTORS SS[JE - 1- NCIVEMEER I!WM . . . . .- j:~~: ~ PARTIMARKING DETAIL - T651 ABSOLUTE MAXIMUM I Collectc,r —— Ern;tter Base . Voltage -. \ oltage IOperatir}g Cc;Ilector and Storage Current Temperature


    Original     		PDF ZDT651 OT223) t30th 41111L-tt+

    Untitled

    Abstract: No abstract text available
    Text: DTC123 JE/JUA/JCA/JSA NPN Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with


    Original     		PDF DTC123 OT-523 OT-323 31TYP O-92S

    TRANSISTOR SOT-23 marking JE

    Abstract: transistor marking code e42 DTC123 sot-23 npn marking code 162 dtc123 equivalent transistor marking e42 code JE SOT23 Transistor A12 011 B NPN SOT23 Diode SOT-23 marking JE
    Text: DTC123 JE/JUA/JCA/JSA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with


    Original     		PDF DTC123 OT-523 OT-323 OT-23 O-92S TRANSISTOR SOT-23 marking JE transistor marking code e42 sot-23 npn marking code 162 dtc123 equivalent transistor marking e42 code JE SOT23 Transistor A12 011 B NPN SOT23 Diode SOT-23 marking JE

    Untitled

    Abstract: No abstract text available
    Text: DTA123 JM/JE/JUA/JCA/JSA PNP Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with


    Original     		PDF DTA123 OT-723 OT-523 31TYP O-92S

    2955T

    Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes


    OCR Scan     		PDF 2955T* 3055T* MJE3055T, MJE2955T MJE2955T 2955T JE3055T 3055t JE3055 je 3055t JE2955T AN415A

    JE243

    Abstract: JE253 je 243 Transistor 834
    Text: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •


    OCR Scan     		PDF MJE243/D MJE243, MJE253 O-225AA JE243 JE253 je 243 Transistor 834

    13003 TRANSISTOR equivalent

    Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
    Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS


    OCR Scan     		PDF MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor

    MJH16004

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE16002/D SEMICONDUCTOR TECHNICAL DATA M JE 16002* M JE 16004* D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors ‘ Motorola Preferred Device These transistors are designed for high-voltage, high-speed switching of inductive


    OCR Scan     		PDF MJE16002/D 21A-06 O-220AB MJH16004

    transistor m 1104

    Abstract: je210 MJE200
    Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors NPN M JE 200* PNP M JE 210* . . . designed for low voltage, low-power, high—gain audio amplifier applications. • • • • • C ollector-Em itter Sustaining Voltage —


    OCR Scan     		PDF MJE200/D O-225AA transistor m 1104 je210 MJE200

    JF18006

    Abstract: No abstract text available
    Text: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use


    OCR Scan     		PDF JE18006/D JF18006 O-220 O-220 MJF18006, 221D0AB 221D-01 221D-02.

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 16002* M JE 16004* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors ‘ Motorola Preferred D*vte* T h e se tra n sisto rs a re d e s ig n e d fo r h ig h -v o lta g e , h ig h -s p e e d s w itc h in g o f in d u c tiv e


    OCR Scan     		PDF P-6042

    MJE130

    Abstract: MJE13070 MJE13071
    Text: HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS MJE13070 MJE13071 400-450 VOLTS 5 AMP, 80 WATTS The M JE 13070and MJE13071 are high-voltage, high-speed power switching transistors, designed for use with inductive circuits, including: switching regulators, inverters, solenoid


    OCR Scan     		PDF MJE13070 MJE13071 MJE1307 MJE130

    F18002

    Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS


    OCR Scan     		PDF MJE/MJF18002 O-220 O-220 MJF18002, 15to20 AN1040. F18002 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR


    OCR Scan     		PDF MJE18002/D MJE/MJF18002 221D-02 E69369

    10205 transistor

    Abstract: JF18004
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS


    OCR Scan     		PDF MJE/MJF18004 O-220 MJF18004, AN1040. 10205 transistor JF18004

    motorola transistor 5331

    Abstract: BFQ254 BFQ234
    Text: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and


    OCR Scan     		PDF 00317m BFQ254; BFQ254/1 OT172A1 OT172A3 BFQ254 OT172A1) BFQ254/I 0Q3174M motorola transistor 5331 BFQ234

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.


    OCR Scan     		PDF bbS3T31 2N3904 2N3906.

    2322151

    Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
    Text: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF bbS3T31 BLF221B MSB009- MBA379 URA310 2322151 M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221

    BU208A

    Abstract: GC630 IS0WATT218
    Text: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N . JE D E C T O -3 METAL CASE. APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR


    OCR Scan     		PDF BU208A BU508A/BU508AFI ISOWATT218 BU208A, BU508A BU508AFI SC06960 GC630 IS0WATT218

    TRANSISTOR 13007a

    Abstract: 13007a 13007a power transistor 13007* transistor S4001
    Text: SGS-THOMSON S i i*i I[L[l g !QOS M JE 13007A SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR • HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007A is silicon multiepitaxial mesa


    OCR Scan     		PDF 3007A MJE13007A O-220 TRANSISTOR 13007a 13007a 13007a power transistor 13007* transistor S4001

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF O220AB BUK453-100A/B BUK453 -100A bb53T31 Joi777

    BUK453-100B

    Abstract: 100-P BUK453-100A T0220AB DIODE BJE
    Text: b=JE T> N AMER PHILIPS/DISCRETE • bbS3T31 DOBQbDS AT? M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended for use in


    OCR Scan     		PDF bbS3131 BUK453-100A/B T0220AB BUK453 -100B BUK453-100B 100-P BUK453-100A DIODE BJE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS


    OCR Scan     		PDF MJE18206/D JF18206 MJE/MJF18206 221D-02 E69369