J250
Abstract: KTC3790U j50 transistor J-150 transistor j50
Text: SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.2dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3790U
-j250
-j150
-j100
J250
KTC3790U
j50 transistor
J-150
transistor j50
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770V
-j250
-j150
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KTC3770S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E B L L Low Noise Figure, High Gain. NF=1.1dB, |S21e| =11dB f=1GHz . D 2 H ) RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3770S
-j250
-j150
-j100
KTC3770S
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0.1 j100
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. NF=1.1dB, |S21e| =11dB f=1GHz . 2 J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3770U
-j250
-j150
-j100
-j100
0.1 j100
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KTC3605U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.
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KTC3605U
-j250
-j150
-j100
KTC3605U
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KTC3605T
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G Low Noise Figure, High Gain. 3 4 2 NF=1.1dB, |S21e| =13dB f=1GHz . D F A Two internal isolated Transistors in one package.
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KTC3605T
-j250
-j150
-j100
KTC3605T
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KTC3605U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.
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KTC3605U
-j250
-j150
-j100
KTC3605U
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KTC3770U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =11dB f=1GHz . J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3770U
-j250
-j150
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KTC3770U
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KTC3600U
Abstract: j50 transistor
Text: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3600U
-j250
-j150
-j100
KTC3600U
j50 transistor
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7746-1 transistor
Abstract: 7746-1 67723 78272 54652
Text: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner
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NSF2250WT1
NSF2250WT1
7746-1 transistor
7746-1
67723
78272
54652
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j50 transistor
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770F
-j250
-j150
-j100
-j100
j50 transistor
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KTC3770V
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770V
-j250
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KTC3770V
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・NF=1.1dB, |S21e|2=11dB f=1GHz . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770F
-j250
-j150
-j100
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES ・Low Noise Figure, High Gain. E B L L ・NF=1.2dB, |S21e| =13dB f=1GHz . D 2 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT
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KTC3790S
1-j150
-j100
-j250
-j150
-j100
-j150
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 ・Low Noise Figure, High Gain. ・NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C ・Two internal isolated Transistors in one package.
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KTC3605U
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transistor pt 6007
Abstract: NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478
Text: SILICON TRANSISTOR UPA807T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz
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UPA807T
NE686
UPA807T
24-Hour
transistor pt 6007
NPN transistor 9418
c 5929 transistor
C 5478 transistor
transistor c 6093
9418 transistor
transistor 9747
transistor k 4212
5294 power transistor
transistor 5478
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KTC3770V
Abstract: transistor j50 marking s22
Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770V
-j250
-j150
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KTC3770V
transistor j50
marking s22
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25 1 SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770F
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-j100
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c 5929 transistor
Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz
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UPA802T
NE681
UPA802T
UPA802T-T1-A
24-Hour
c 5929 transistor
transistor k 2541
Transistor C 4927
741 LEM
2955 transistor
lem 723 733
transistor c 5299
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transistor j50
Abstract: J250 j50 transistor KTC3790S
Text: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.2dB, |S21e| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3790S
-j250
-j150
-j100
transistor j50
J250
j50 transistor
KTC3790S
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2N4950
Abstract: Solitron Transistor
Text: SOLITRON DEVICES INC bl DE |fl3bflbD5 0001307 0 | ~}7 0 T - 9 3 - S' ENGINEERING DEVICE SPECIFICATION (Transistor • 1.0 SECTION I: 1.1 Construction: 2 W\'j50 SILICON DEVICE DESCRIPTION This device is an NPN Diffused Planar Power Transistor (86d) packaged in a double-ended stud-mounted case (HAH).
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DGD13DÖ
2N4950
Solitron Transistor
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transistor D 4515
Abstract: 224515 KS224515 ks2245
Text: 7 294621 P O W E R EX IÑC ~b5 d ÌT| 75^21 DDDDTOB fi f ~3 Single Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3 .1 5 0 + .0 2 0 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 T-33-35 150 Amperes J50/I Zvoîts M illim eters 94 Max .80 ± 0 .5
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T-33-35
KS22451510
S22451510
transistor D 4515
224515
KS224515
ks2245
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. NF —1.8dB, |S2lel2= 10dB f=2GHz + 0.2 2 .9 -0 -3 II -a MAXIMUM RATINGS (Ta = 25°C)
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2SC5097
--j50
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2SC5086
Abstract: No abstract text available
Text: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2 lel 2—lld B Unit in mm f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5086
2SC5086
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