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    J250 Search Results

    J250 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    OPA336NJ/250 Texas Instruments Single-Supply, MicroPower CMOS Operational Amplifiers MicroAmplifier™ Series 5-SOT-23 -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

    J250 Price and Stock

    Walsin Technology Corporation 0201N270J250CT

    CAP CER 27PF 25V C0G/NP0 0201
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    DigiKey 0201N270J250CT Cut Tape 49,275 1
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    0201N270J250CT Reel 45,000 15,000
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    Bristol Electronics 0201N270J250CT 285,000
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    MOSLEADER SMCJ250A-TR7-ML

    SMC(DO-214AB) Commercial Grade
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    DigiKey SMCJ250A-TR7-ML Reel 30,000 200
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    YAGEO Corporation SMAJ250A/TR13

    SMAJ, DO-214AC, 250V, 405V, REEL
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    DigiKey SMAJ250A/TR13 Reel 5,000 5,000
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    Avnet Americas SMAJ250A/TR13 Reel 18 Weeks 20,000
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    YAGEO Corporation SMBJ250A/TR13

    SMBJ, DO-214AA, 250V, 405V, REEL
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    DigiKey SMBJ250A/TR13 Cut Tape 2,993 1
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    GCT Semiconductor Inc DCJ250-10-A-K1-K

    DC POWER JACK, THRU HOLE, HORIZO
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    DigiKey DCJ250-10-A-K1-K Bulk 2,389 1
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    Newark DCJ250-10-A-K1-K Bulk 1,920 1
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    Find more J250 price and stock on Findchips.com

    J250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    110 IDC

    Abstract: Cat3
    Text: POST MINI CAT3 JACK 8 POSITIONS 4 CONDUCTORS IVORY part number: 300-j2506/IV pg. 1 APPROVALS: MARKETING TECHNICAL SALES FINAL DATE: THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO VERTICAL CABLE AND MAY NOT BE DISCLOSED OR TRANSMITTED TO ANY OTHER


    Original     		PDF 300-j2506/IV 10Base-T 100VG-Any 110 IDC Cat3

    DS493

    Abstract: No abstract text available
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP


    Original     		PDF

    mini jack

    Abstract: No abstract text available
    Text: POST MINI CAT3 JACK 8 POSITIONS 4 CONDUCTORS WHITE part number: 300-j2507/WH pg. 1 APPROVALS: MARKETING TECHNICAL SALES FINAL DATE: THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO VERTICAL CABLE AND MAY NOT BE DISCLOSED OR TRANSMITTED TO ANY OTHER


    Original     		PDF 300-j2507/WH 10Base-T 100VG-Any mini jack

    B82723

    Abstract: No abstract text available
    Text: EPCOS Sample Kit 2014 Ring Core Chokes for Power Lines Series B82723 www.epcos.com Ring Core Chokes for Power Lines Series B82723 LR IR L stray, typ Rtyp TR UL1 /VDE Ordering code mH A µH mV °C 56 0.5 800 2100 60 Yes A/J2501N001 B82723 27 1 440 750 60 Yes


    Original     		PDF B82723 /J2501N001 /J2102N001 /J2202N001 /J2402N001 /J2802N001 B82724 B82726 B82723

    BC647

    Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645

    77C7

    Abstract: 887c 1r12r
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications


    Original     		PDF FMM5017VF 29dBm FMM5017VF FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


    Original     		PDF 2SC5277A ENA1075A A1075-8/8

    mc3371

    Abstract: 58112,5 MHZ motorola application notes mc3361 MC3372 Colpitts mc3361 MC3371DTB MC3371P audio limiter analog 948F
    Text: Order this document by MC3371/D MC3371 MC3372 Low Power Narrowband FM IF LOW POWER FM IF The MC3371 and MC3372 perform single conversion FM reception and consist of an oscillator, mixer, limiting IF amplifier, quadrature discriminator, active filter, squelch switch, and meter drive circuitry. These devices are


    Original     		PDF MC3371/D MC3371 MC3372 MC3371 MC3372 MC3371/MC3372 MC3361/MC3357 MC3361/MC3357. 58112,5 MHZ motorola application notes mc3361 Colpitts mc3361 MC3371DTB MC3371P audio limiter analog 948F

    J943-4554

    Abstract: e78996 india E78996 rectifier module IR E78996 IRFK6H250 u114 IRFK6J250 J9-43
    Text: Bulletin E 2 7111 International Ii ÔrIRectifier IRFK6H250,1RFK6 J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • H igh C urrent C apability. UL recognise d E 78996. E lectrically Isola ted B ase Plate. E asy A ssem b ly into E quipm ent.


    OCR Scan     		PDF E27111 IRFK6H250 IRFK6J250 E78996. T0-240 S-162 CH-6032 IL60067. NJ07650. J943-4554. J943-4554 e78996 india E78996 rectifier module IR E78996 u114 IRFK6J250 J9-43

    J2955

    Abstract: j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor
    Text: MOTOROLA Order this document by J2500/D SEMICONDUCTOR TECHNICAL DATA M J2955 See 2N 3055 M J2955A (See 2N 3055A ) M edium -Pow er Com plem entary Silicon Transistors M J2500 . . . for use as output devices in complementary general purpose amplifier applica­


    OCR Scan     		PDF MJ2500/D J2955 J2955A J2500 J2501* J3000 J3001* O-204AA J2955 j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain Unit in mm 2.16 ± 0.2 1.1 1.1 : Ga = 10dB (f=12GHz)


    OCR Scan     		PDF 2SK2497 12GHz)

    Untitled

    Abstract: No abstract text available
    Text: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC3607 -j250

    Untitled

    Abstract: No abstract text available
    Text: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1


    OCR Scan     		PDF 2SC5086

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC3099 500MHz) SC-59

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)


    OCR Scan     		PDF 2SC3098 500MHz) SC-59 S21el2

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 U nit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB , |S2lel2= lld B f=lGHz M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SC3606 SC-59

    AN3592K

    Abstract: AN3592S phase shift detector V01D
    Text: AN3592K, AN3592S AN 3592K, AN3592S P A L V T R Ï E Î I I Ï S / P A L V T R J u m p i n g C o r r e c t i o n C ir c u its • let AN3592K w A N 3592K , A N 3 5 9 2 S !i, PA LA 'iSV TR tfO L Pi - m & Unit : mm K t t W S W U ft m • A N 3592K , A N 3 5 9 2 S i; ; ^ } * iig £■ff L T i ‘ 5 ,


    OCR Scan     		PDF AN3592K, AN3592S AN3592S AN3592K 22-Lead AN3592K phase shift detector V01D

    LA3101

    Abstract: PC19060 Igus LD-310 LDL8 pci9080 80960Cx 93C06 I960CX NM93CS06
    Text: PCI 9060 T E C December, 1995 VERSION 1.2 PCI Bus Master Interface Chip for Adapters and Embedded Systems Features General D escrip tio n _ • PCI Bus Master Interface supporting adapters and embedded systems • Two independent DMA channels for local


    OCR Scan     		PDF PCI9060 Q0007bl xi6-31 Page-100- 0Q007b2 PCI90S0 LA3101 PC19060 Igus LD-310 LDL8 pci9080 80960Cx 93C06 I960CX NM93CS06

    S3111

    Abstract: 3111P
    Text: PT01 M S3111 cable connecting plug TERMINATION ASSEMBLIES " A ” General Duty •A" (SR), “ E " (SR), 'P '(SR), MS " F " Strain Relief Open Wire Seal *'P" P otting Bool W Cable Seal L L - D A P T 0 1A -X X -X X X (SR) PT01 E 'X X -X X X (SR )


    OCR Scan     		PDF S3111) 3111P 4375-28UNEF S3111

    Untitled

    Abstract: No abstract text available
    Text: 2 4 6 5 7 REVI5IONS ISS ZONE D E 5C R IP TIO N \P E R REQUEST\DATE F E D PLATING THICKNESS IN M IC R O -IN C H E S PER Q Q - B - 6 2 6 PL, 1 2 0 MIN, THICK OVER COPPER STRIKE PL. 2 0 0 MIN. THICK OVER COPPER STRIKE M lL - P - 19468 GASKET SILICONE BLACK


    OCR Scan     		PDF /65XD18 46XD1 66541A1---- 142A1 J2-50

    ET 2314

    Abstract: No abstract text available
    Text: 2SC5065 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR Unit in mm V H F - U H F B A N D L O W NO ISE A M P L IF IE R A PPLIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ld B , | S 2 l e l 2 = 12dB f=lG H z ÖO + COI Ö M A X IM U M R A T IN G S (Ta = 25°C)


    OCR Scan     		PDF 2SC5065 SC-70 13ASU IC314 ET 2314

    LTA 703 S

    Abstract: amplifier shf
    Text: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SK2331 12GHz) LTA 703 S amplifier shf