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    J3 S9013 Search Results

    J3 S9013 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    PS9013-Y-AX Renesas Electronics Corporation 1 Mbps, Open Collector Output, High CMR, IPM DRIVER, 5-PIN SSOP (LSO5) Photocoupler, , / Visit Renesas Electronics Corporation
    PS9013-Y-V-F3-AX Renesas Electronics Corporation 1 Mbps, Open Collector Output, High CMR, IPM DRIVER, 5-PIN SSOP (LSO5) Photocoupler Visit Renesas Electronics Corporation
    PS9013-Y-V-AX Renesas Electronics Corporation 1 Mbps, Open Collector Output, High CMR, IPM DRIVER, 5-PIN SSOP (LSO5) Photocoupler, , / Visit Renesas Electronics Corporation
    PS9013-Y-F3-AX Renesas Electronics Corporation 1 Mbps, Open Collector Output, High CMR, IPM DRIVER, 5-PIN SSOP (LSO5) Photocoupler Visit Renesas Electronics Corporation

    J3 S9013 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz

    s9013 transistor

    Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3

    S9013 SOT-23

    Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
    Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23

    S9013 J3

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 S9013 S9012.

    Untitled

    Abstract: No abstract text available
    Text: S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics


    Original     		PDF S9013LT1 OT-23 S9013LT1 50mAdc)

    S9013

    Abstract: No abstract text available
    Text: S9013 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Unit


    Original     		PDF S9013 OT-23 S9013 50mAdc)

    Untitled

    Abstract: No abstract text available
    Text: S9013LT1 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 O E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF S9013LT1 OT-23 S9013LT1 13-May-05 50mAdc) SMAL20uA

    S9013LT1

    Abstract: No abstract text available
    Text: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 O ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF S9013LT1 OT-23 S9013LT1 13-May-05 50mAdc)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M


    Original     		PDF WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW 500mA 500mA 30MHz

    S9012M

    Abstract: S9013M
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M


    Original     		PDF WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW S9012M S9013M

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range


    Original     		PDF OT-23 OT-23 S9013LT1 500mA S9013LT1 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR NPN SOT–323 FEATURES  High Collector Current  Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-323 S9013W 500mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation


    Original     		PDF OT-23 S9013LT1 037TPY 950TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.


    Original     		PDF S9013 500mAï S9012. 300mW) OT-23 BL/SSSTC082

    J3 s9013

    Abstract: S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.


    Original     		PDF S9013 500mA S9012. 300mW) OT-23 BL/SSSTC082 J3 s9013 S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23

    NPN Silicon Epitaxial Planar Transistor

    Abstract: transistor s9012 S9012 S9013W J3 SOT
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PT=200mW S9013W Pb Lead-free APPLICATIONS z High Collector Current.


    Original     		PDF S9013W 500mA S9012. 200mW) OT-323 BL/SSSTF011 NPN Silicon Epitaxial Planar Transistor transistor s9012 S9012 S9013W J3 SOT

    Untitled

    Abstract: No abstract text available
    Text: FS9952_LP1 Data Sheet 2,000 counts auto range DMM IC. Rev. 1.8 Aug 2006 Fortune Semiconductor Corp. FS9952_LP1-DS-18_EN CR-004 FS9952_LP1 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742


    Original     		PDF FS9952 LP1-DS-18 CR-004

    FS9952

    Abstract: No abstract text available
    Text: FS9952_LP2-DS-10_EN Datasheet OCT 2006 F P r R ro SC p ef e ’ er rti en es ce O nl y REV. 1.0 FS9952_LP2 Fo 2,000 counts auto range DMM IC FS9952_LP2 Fo F P r R ro SC p ef e ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF FS9952 LP2-DS-10 FS9952 64-pin

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664

    TPT5609

    Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
    Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)


    Original     		PDF 2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A

    S9013LT1

    Abstract: No abstract text available
    Text: S9013LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .CO LLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25°C) Collector current 0.5 A ICM: Collector-base voltage V(BR)CBo :40V Operating and storage junction temperature range Tj.Tstg :-55°C to+150°C UNIT: mm


    OCR Scan     		PDF OT-23 S9013LT1 150eC S9013LT1 160uA 140uA 120uA 100uA

    transistor BR 9013

    Abstract: 9013 NPN transistor 9013 H NPN
    Text: M C C S O T -2 3 P la s tic -E n c a p s u la te T r a n s is to r s ^ 1.BASE 2.EMITTER 3.COLLECTOR ." V S9013LT1 TRANSISTOR NPN 4 '" FEATURES Oi Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: 0 .5 A C ollector-base voltage V(BR)CBO:40V


    OCR Scan     		PDF S9013LT1 Symbo350 S9013LT1 transistor BR 9013 9013 NPN transistor 9013 H NPN

    59013

    Abstract: S9013 s9013 transistor IC-500
    Text: 1 S9013 couxcToq NPN General Purpose Transistors % - v€ v2 SOT-23 ri/nrrR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOItage Collector Current-Continuous Symbol V a lu e V CEO VCBO 25 lc Total Device Dissipation FR-5 Board 1)


    OCR Scan     		PDF TA-25t TA-25 S9013 59013 s9013 transistor IC-500