S9012M Search Results

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MOSLEADER S9012-ML 25V 625mW 500mA PNP SOT-23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S9012-ML	Reel			200	1 - 10 - 100 - 1000 $0.02699 10000 $0.01966	Buy Now
TURCK Inc BI50U-Q80-AP6X2/S90 12M Usp \|Turck BI50U-Q80-AP6X2/S90 12M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	BI50U-Q80-AP6X2/S90 12M	Bulk			1	1 $298.48 10 $298.48 100 $298.48 1000 $298.48 10000 $298.48	Buy Now
TURCK Inc BI50U-Q80-AP6X2/S90 12M (ALTERNATE: 1608943) ProXimity Sensor, 50mm Sensing DistanceNO, PNP, Flush Mount \| Turck BI50U-Q80-AP6X2/S90 12M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	BI50U-Q80-AP6X2/S90 12M (ALTERNATE: 1608943)	Bulk		15 Weeks	1	1 $287 10 $287 100 $287 1000 $287 10000 $287	Get Quote

S9012M Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S9012M		Jiangsu Changjiang Electronics Technology	TRANSISTOR		Original	PDF

S9012M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M	Original	WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW 500mA 500mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE	Original	WBFBP-03B S9012M WBFBP-03B S9013M 150mW -50mA -500mA,	PDF
2t1 transistor Abstract: S9012M S9013M Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE	Original	WBFBP-03B S9012M WBFBP-03B S9013M 150mW 2t1 transistor S9012M S9013M	PDF
S9012M Abstract: S9013M Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M	Original	WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW S9012M S9013M	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE	Original	WBFBP-03B S9012M WBFBP-03B S9013M 150mW	PDF