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    Microchip Technology Inc Jantx2N2906A

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc Jan2N2906A

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc JANTX2N2906AUBC/TR

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc JANTXV2N2906AUBC/TR

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    Microchip Technology Inc JANS2N2906AUB/TR

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    J 2N2906 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J 2N2906 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N2906 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-2N2906 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J.2N2906 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J 2N2906A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N2906A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-2N2906A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J.2N2906A Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 2N2906 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N916

    Abstract: 2N2906E
    Text: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V.


    Original     		2N2906E -50nA -50mA, 1N916 2N2906E PDF

    f-10Hz

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 ・Low Leakage Current C FEATURES : ICEX=-50nA Max. , IBL=-50nA(Max.) D @VCE=-30V, VEB=-3V.


    Original     		2N2906E -50nA -50mA, 100mA f-10Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V.


    Original     		2N2906E -50nA -50mA, PDF

    BF681

    Abstract: BF272 BF272A BC116 KT361G BF679 BFR38 KT361E BF509 LOW-POWER SILICON PNP
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 30 ~~~~~ +~~~~~~~EFC BFR38 BFR38 BF516 BF272A BF272A BF272S BF970A BF970A MPS4248 MPS4248 IMBT3905 2SA523A 2N2904 2N2906 PN2904 SF220 NthAmerSemi Semelab NthAmerSemi SGS•Ates NthAmerSemi


    Original     		KT361E KT361G 2N3307 2N3829 BF506 BF680 BF316 BF509T BF509 BF681 BF272 BF272A BC116 BF679 BFR38 BF509 LOW-POWER SILICON PNP PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2n2906

    Abstract: PN2221 PN2906A 2N2221A 2N2906A PN2906
    Text: 2N 2906 PN 2906 • 2N2906A ■ PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES J CASE TO-18 CASE T0-92A Ä CBE EBC 2N290ë 2N2906A PN2906 PN2906A THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM


    OCR Scan     		2N2906 2N2906A PN2906A 2n2906, 2n2906a, pn2906, pn2906a 2n2221 2N2221A, PN2221, 2n2906 PN2221 2N2221A PN2906 PDF

    2N2907

    Abstract: 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906
    Text: 2N2906, 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching max .0.50 Metal case J E D E C TO -18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings


    OCR Scan     		2N2906, 2N2907 2N2907 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906 PDF

    2N2906

    Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907
    Text: LUCAS LEDEX/ fil» D LUCAS 5b 07013 QODGin fi 1.8W PNPGENERAL PURPOSE SMALL SIGNAL TRANSISTORS 2N2906 2N2907 j These transistors are silicon planar epitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose


    OCR Scan     		5b07013 2N2906 2N2907 SO-132A C7/B11 500mA, 600mA 150mA 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907 PDF

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


    OCR Scan     		ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package PDF

    RNW transistor

    Abstract: 2n3486a 2N3485
    Text: TYPES 2N3485, 2N3485A, 2N3486. 2N3486A P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 5 7 8 8 5 , J U L Y 1 965 DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • Electrically Identical to 2N2906, 2N2906A, 2N2907, and 2N2907A in


    OCR Scan     		2N3485, 2N3485A, 2N3486. 2N3486A 2N2906, 2N2906A, 2N2907, 2N2907A 2N3485 2N3486 RNW transistor PDF

    2N3350

    Abstract: Thyristor TO39 2N2906 2N2906A 2N2907 2N2907A 2N2914 2N2915 2N2916 2N2917
    Text: Type No. BS/CECC Polarity 2N2906\ CV-0 PN P 2N2906A; PNP 1CV' ° 2N2907 1f f j CV-0 PN P CV-0 PN P 2N2907A 2N2913y1 50002-186 NPN Dual 6 1 3 31 87 37E SEMELAB L T D •c hpE @ VCE & lc Package VCEO cont T018 T018 T018 T018 T077 40 60 -40 60 45 0.6 0.6 0.6


    OCR Scan     		ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3350 Thyristor TO39 2N2906 2N2906A 2N2907 2N2914 PDF

    2n2907Jan

    Abstract: N906a 2N2907AJAN
    Text: SEM IC O N D U C TO R t e c h n ic a l d a ta 2N2906JAN, JTX, JTXV 2N2906AJAN, JTX, JTXV 2N2907JAN, JTX, JTXV 2N2907AJAN, JTX, JTXV, J A N S C R V ST A LO fJC S 2805 Veterans Highway Suite 14 Processed per M IL-S-19500 291 PNP Silicon Small-Signal Transistors


    OCR Scan     		2N2906JAN, 2N2906AJAN, 2N2907JAN, 2N2907AJAN, IL-S-19500 2N2906 2N290T N2906A 2N2907A 1177b 2n2907Jan N906a 2N2907AJAN PDF

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238 PDF

    N2222

    Abstract: SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


    OCR Scan     		Tj-25 Ta-26Â Tc-25 /2N3701 T0-18 N4030 2N4032 N4033 300jus O-105 N2222 SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100 PDF

    SL100B

    Abstract: SL100A BF107 SL100 npn N2222A 2N4032 N4030 SK100B SK102 SL100
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


    OCR Scan     		Tj-25 Ta-26Â To-25 /2N3701 N4030 SN4031 2N4032 /2N4033 O-220 O-106 SL100B SL100A BF107 SL100 npn N2222A SK100B SK102 SL100 PDF

    C495 transistor

    Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
    Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250


    OCR Scan     		BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495 PDF

    bcy5b

    Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
    Text: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		45DEG Tas25Â 2N706A BCY79-9 BCY79-10 BFX37 CF103 bcy5b BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720 PDF

    2N2368

    Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
    Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4


    OCR Scan     		BFY51 2N2218 N2904 2N2219 2N2905 2N2220 2N2221 N2906 2N2222 2N2907 2N2368 2N2475 2n2369 2N2476 N2904 PDF

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815 PDF

    2n3072

    Abstract: No abstract text available
    Text: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35


    OCR Scan     		2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2n3072 PDF

    N2905

    Abstract: N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2904A 2N2906A
    Text: PNP SWITCHING T A B LE 4 SILICO N PLA N A R M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S Type V c EO Max VcE sat at hFE f j Min at at Switching Times (M ax) at n 1 The devices shown in this table are characterised for general medium voltage, medium and


    OCR Scan     		ZT189 T0-18 2N4036 2N2102 2N2904A 4BCY79 BCY59 N2904 2N2218 N2905 N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2906A PDF

    Untitled

    Abstract: No abstract text available
    Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at


    OCR Scan     		7057fl BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2369A 2N2368 2N2369 PDF

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


    OCR Scan     		2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720 PDF

    D2N2905A

    Abstract: ic 2905a
    Text: S G S -T H O M S O N R fflD is œ iL iO ÏÏM iD g i 2 N 2 9 0 4 A -2 N 2 9 0 5 A 2 N 2 9 0 6 A -2 N 2 9 0 7 A GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec


    OCR Scan     		2N2904A, 2N2905A, 2N2906A 2N2907A 2N2904A 2N2905A) 2N2907A) 2N2904A/2N2905A 2N2906A/2N2907A D2N2905A ic 2905a PDF