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    IXTM10N90 Search Results

    IXTM10N90 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTM10N90 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTM10N90 IXYS MegaMOS FET Scan PDF
    IXTM10N90 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTM10N90 Unknown FET Data Book Scan PDF
    IXTM10N90A Unknown FET Data Book Scan PDF

    IXTM10N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    Untitled

    Abstract: No abstract text available
    Text: □ VDSS MegaMOS FET IXTH/IXTM 10 N90 IXTH/IXTM 12 N90 900 V 900 V ^D25 DS on 10 A 1.10 ß 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25"C to 150°C 900 VoOB Tj = 25°C to 150°C; RGg = 1 M il 900 V Vos Continuous ±20 V VGSM


    OCR Scan     		PDF 10N90 12N90 12N90 O-247 O-204 O-204 O-247 IXTH10N90 IXTM12N90

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan     		PDF O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95

    10N90

    Abstract: U3350 12N90 D-68623 IXTH10N90 IXTH12N90 IXTM10N90
    Text: v DSS MegaMOS FET IXTH/IXTM 10 N90 900 V IXTH/IXTM 12 N90 900 V p ^D25 DS on 10 A 1.10 Q 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25 °C to 150°C 900 V v DCR Tj = 25°C to 150°C; RGS = 1 Mi2 900 V V GS Continuous ±20


    OCR Scan     		PDF O-247 10N90 12N90 O-204 O-247 00D37Ã U3350 D-68623 IXTH10N90 IXTH12N90 IXTM10N90

    1800 IXYS

    Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204
    Text: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (*typ) (*typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %


    OCR Scan     		PDF M4N50 T0-204 1XTM4N50A O-204 1XTM4N70 IXTM4N70A IXTM10N90A 1800 IXYS IXTM4N80 IXTM4N90 IXTM5N100 to-204