IXTK21N100 Search Results

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IXYS Corporation IXTK21N100 MOSFET N-CH 1000V 21A TO264
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DigiKey	IXTK21N100	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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New Advantage Corporation	IXTK21N100		12		1	1 - 10 $34.8 100 $32.48 1000 $32.48 10000 $32.48	Buy Now
IXYS Integrated Circuits Division IXTK21N100 MOSFET DIS.21A 1000V N-CH TO264 H.VOLTAGE THT
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Ozdisan Elektronik	IXTK21N100		15			1 $25.9919 10 $25.9919 100 $24.2915 1000 $24.2915 10000 $24.2915	Buy Now

IXTK21N100 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IXTK21N100		IXYS	600V high voltage megaMOS FET		Original	PDF

IXTK21N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	PDF	IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
IXAN0011 Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408 Text: IXAN0011 Driving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and Development IXYS Corporation 3540 Bassett St., Santa Clara California USA Phone: 408-982-4355, Fax: 408-496-0670	Original	PDF	IXAN0011 100KHz IXAN0011 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
78737 Abstract: No abstract text available Text: High Voltage MegaMOS FETs IXTK21N100 IXTN21N100 V DSS ^D25 R DS on =1000 V = 21 A = 0.55 fì N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions VDSS Tj = 25 °C to 150°C 1000 1000 V v DGR Tj = 25 °C to 150°C; RGS = 1 MQ 1000 1000 V V ss	OCR Scan	PDF	IXTK21N100 IXTN21N100 O-264 OT-227 E153432 ab22b 00D4D0S 78737
21N100 Abstract: 21N10 ixtw DIXYS IXTN21N100 Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ	OCR Scan	PDF	21N100 O-264 Cto150 OT-227 21N100 21N10 ixtw DIXYS IXTN21N100
30n50 mosfet Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600	OCR Scan	PDF	O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel