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    IXTH11P50 Search Results

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    IXTH11P50 Price and Stock

    Littelfuse Inc IXTH11P50

    MOSFET P-CH 500V 11A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH11P50 Tube 81 1
    • 1 $12.27
    • 10 $8.543
    • 100 $6.4308
    • 1000 $5.96612
    • 10000 $5.96612
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    Newark IXTH11P50 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.69
    • 10000 $6.69
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    IXYS Corporation IXTH11P50

    MOSFETs -11 Amps -500V 0.75 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH11P50
    • 1 $11.56
    • 10 $8.55
    • 100 $6.43
    • 1000 $6.43
    • 10000 $6.43
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    Future Electronics IXTH11P50 Tube 120 30
    • 1 -
    • 10 -
    • 100 $7.43
    • 1000 $7.31
    • 10000 $7.31
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    Bristol Electronics IXTH11P50 148
    • 1 -
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    TTI IXTH11P50 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.38
    • 10000 $6.38
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    TME IXTH11P50 1
    • 1 $11.38
    • 10 $8.36
    • 100 $8.07
    • 1000 $8.07
    • 10000 $8.07
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    IXYS Integrated Circuits Division IXTH11P50

    MOSFET DIS.11A 500V P-CH TO247-3 POWER THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTH11P50
    • 1 $12.42484
    • 10 $12.42484
    • 100 $11.612
    • 1000 $11.612
    • 10000 $11.612
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    IXTH11P50 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTH11P50 IXYS 500V standard power MOSFET Original PDF
    IXTH11P50 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 11A TO-247AD Original PDF
    IXTH11P50 IXYS High Voltage Power MOSFETs Scan PDF
    IXTH11P50 IXYS High Voltage Power MOSFETs Scan PDF
    IXTH11P50SN IXYS Transistor Mosfet P-CH 500V 11A 3TO-247 AD Original PDF

    IXTH11P50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTH11P50

    Abstract: No abstract text available
    Text: Power MOSFETs VDSS ID25 IXTH11P50 IXTT11P50 RDS on = = ≤ - 500V - 11A Ω 750mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Symbol Test Conditions D (Tab) Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTH11P50 IXTT11P50 O-268 O-247 100ms 11P50 7X-L64 IXTH11P50

    IXTH11P50

    Abstract: No abstract text available
    Text: Power MOSFETs IXTH11P50 IXTT11P50 VDSS ID25 RDS on = = ≤ - 500V - 11A Ω 750mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTH11P50 IXTT11P50 O-268 062in. O-247) O-268 O-247 O-247

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


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    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


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    PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10

    Untitled

    Abstract: No abstract text available
    Text: IPIXYS v DSS Standard Power MOSFET IXTH10P50 IXTH11P50 -500 V -500 V p DS on ^D25 0.90 Q -10 A 0.75 Û -11 A P-Channel Enhancement Mode Avalanche Rated Preliminary data Symbol Test Conditions V„ss Tj =25°Cto150°C -500 V ^ -500 V V DOB Maximum Ratings


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    PDF IXTH10P50 IXTH11P50 Cto150 10P50 11P50 O-247

    switching pushpull

    Abstract: No abstract text available
    Text: Standard Power MOSFET IXTH10P50 IXTH11P50 VDSS = -500 V lD25 =-10/-11 R d s ,o „ , = 0.90/0.75 Cl P-Channel Enhancement Mode Avalanche Rated Preliminary data Maximum Ratings Symbol Test Conditions ^DSS Tj = 25°C to 150°C -500 V v DGR T, = 25°C to 150°C; RGS = 1 Mi2


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    PDF IXTH10P50 IXTH11P50 10P50 11P50 11P50 O-247 switching pushpull

    Mosfet K 135 To3

    Abstract: a 1712 mosfet 11P50 ixtm11p50
    Text: IDE D 1 4t.at.Bat. o o o a a s i i I I X Y S CORP _T ~ -3 <?- 2 3 □ IXYS P-CHANNEL MOSFETS IXTH11P50, 45 IXTM11P50, 45 MAXIMUM RATINGS IX T H 1 1 P 5 0 ' IX T H 1 1 P if5 Parameter Sym. IX T M 1 1 P 5 0 IX T M 1 1 P ^ 5 Drain-Source Voltage 1


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    PDF IXTH11P50 IXTM11P50 IXTH11Pit5 IXTM11P45 IXTH11P50, IXTM11P50, 50-500V, 00esn0tincluoe Mosfet K 135 To3 a 1712 mosfet 11P50

    IXTH40N25

    Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
    Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025


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    PDF IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent

    1XTH5N100

    Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
    Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10


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    PDF IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


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    PDF BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240

    T0252AA

    Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y


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    PDF SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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    PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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