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    IXGQ90N33TBD1

    Abstract: IXGQ90N33 90n33 90N33TB IXgq90n ixgq90n33t
    Text: IXGQ90N33TBD1 Trench Gate IGBT VCES = = ICP VCE sat ≤ For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM 330 V ±30 V 90 A 330V 360A 1.6V TO-3P IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s


    Original     		PDF IXGQ90N33TBD1 90N33TB 5-27-08-B IXGQ90N33TBD1 IXGQ90N33 90n33 IXgq90n ixgq90n33t

    IXGQ90N33

    Abstract: 90n33 IXGQ90N33TB IC tl 072 IGBT I rms 45A IXGQ90 IXgq90n 90N33T
    Text: IXGQ90N33TB Trench Gate High Speed IGBT VCES = = ICP VCE sat ≤ 330V 360A 1.6V For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM 330 V ±30 V 90 A TO-3P IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s


    Original     		PDF IXGQ90N33TB 90N33TB 5-27-08-B IXGQ90N33 90n33 IXGQ90N33TB IC tl 072 IGBT I rms 45A IXGQ90 IXgq90n 90N33T

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250