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    IXGH 28N30 Search Results

    IXGH 28N30 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1408BI-13-28N-30.000000 SiTime Low Power Active Resonator Drop-In Replacement for 4-pin SMD XTAL Datasheet
    SiT1602BC-32-28N-30.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT9365AC-1B3-28N30.720000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-1E3-28N300.000000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-2B3-28N300.000000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-2E1-28N30.720000 SiTime Standard Frequency Low Jitter Differential XO Datasheet

    IXGH 28N30 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGH28N30 IXYS 300V HiPerFAST IGBT Original PDF
    IXGH28N30A IXYS HiPerFAST IGBT Original PDF
    IXGH28N30B Unknown HiPerFAST IGBT Original PDF

    IXGH 28N30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = IC25 = VCE sat typ = = tfi(typ) 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES


    Original     		PDF 28N30A 28N30A O-247 O-268AA

    752 smd

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = = IC25 VCE sat typ = tfi(typ) = 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES


    Original     		PDF 28N30A O-247 O-268 O-268AA 752 smd

    28N30

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = = = = 300 V 56 A 1.6 V 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous


    Original     		PDF 28N30 28N30 O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V


    Original     		PDF 28N30 28N30 O-268 O-247 O-268AA

    ad 161

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90


    Original     		PDF 28N30B O-268 O-247 O-268AA ad 161

    28N30

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 28N30 O-268 O-247 O-268AA 28N30

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90


    Original     		PDF 28N30B 28N30B O-247 O-268 O-268 O-268AA

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    Untitled

    Abstract: No abstract text available
    Text: ÖIXYS HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ tfi(ty p ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 300 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 300 V v GES Continuous


    OCR Scan     		PDF 28N30 O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: ÖIXYS HiPerFAST IGBT IXGH 28N30B IXGT 28N30B 300 56 2.1 55 V CES ^C25 V CE sat typ t fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 300 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 300 V v GES Continuous


    OCR Scan     		PDF 28N30B

    28N30

    Abstract: No abstract text available
    Text: r i T v v < v HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ ^fi(typ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ 300 V v GES


    OCR Scan     		PDF 28N30 28N30 O-268 O-268 O-247

    28N30B

    Abstract: No abstract text available
    Text: DIXYS IXGH 28N30B IXGT 28N30B HIPerFAST IGBT VCES ^C25 V CE sat typ trfi(typ,i /K • Symbol ~ 300 56 2.1 55 V A V ns TO-247 AD Test Conditions : 25° C to 150=C V CES v OCR T, V Continuous =2 5 ° C to 150°C; R . 1 MO (TAB) Transient T c = 2 5 °C ^C90


    OCR Scan     		PDF 28N30B 28N30B O-247 O-268 O-268

    28N30

    Abstract: No abstract text available
    Text: ÖIXYS HiPerFAST IGBT IXGH 28N30 IXGT 28N30 V CES ^C2 V C E s a t ty p t fi(typ) 300 V 56 A 1.6 V 180 ns P re lim in a ry d ata sheet Symbol Test Conditions TO-247 AD T, = 25° C to 150° C 300 V T.J = 25° C to 150° C: RG „t = 1 MQ 300 V Continuous


    OCR Scan     		PDF 28N30 O-247 O-268

    28n30a

    Abstract: No abstract text available
    Text: niXYS HIPerFAST“ IGBT IXGH 28N30A IXGT 28N30A CES ^C25 V CE sat typ t fi(typ) 300 56 1.85 120 V A V ns P re lim in a ry data sh ee t i f Maximum Ratings Symbol Test Conditions V CES T, =25°C to 150°C 300 V Tj = 25° C to 150° C; RGE= 1 M£i 300 V V GES


    OCR Scan     		PDF 28N30A 28N30A O-247 O-268

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50